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US3558376A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for controlled doping by gas of foreign substance into semiconductor materials

Assignee: Siemens AG
•
Filing: 1967-01-05
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Granted: 1971-01-26
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Expires: 1987-01-05
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Abstract

Abstract CONTROLLED PROCESS FOR INTRODUCING FOREIGH SUBSTANCES, E.G. DOPANTS AND RECOMBINATION CENTERS, INTO A MOLTEN SEMICONDUCTOR BODY BY DIRECTING FOREIGN SUBSTANCE IN GASEOUS FORM IN THE IMMEDIATE VICINITY OF THE MELT.

Inventors

  • 👤 Otto Schmidt
  • 👤 Klaus Wartenberg
  • 👤 Konrad Reuschel

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 04:32
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/04; C30B11/06; C30B13/00; C30B13/08; C30B13/10; C30B13/12; Y; Y10; Y10S; Y10S117/00; Y10S117/906; Y10S118/00; Y10S118/90; Y10S252/00; Y10S252/95; Y10S252/951

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-01-25 1974-07-27 1975-01-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-01-25 1978-07-27 1979-01-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-01-25 1982-07-27 1983-01-26 $7700.00 Window Closed / Lapsed

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