US4099070A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sense-write circuit for random access memory
Assignee: Motorola Solutions Inc
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Filing: 1976-11-26
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Granted: 1978-07-04
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Expires: 1996-11-26
Abstract
Abstract A sense-write circuit for use with a emitter coupled logic memory array is provided. A first differential stage includes a pair of emitter-coupled transistors connected to a current source controlled by a chip select voltage. A first one of the emitter-coupled transistors has its base connected to a first reference voltage and the second one of said transistors has its base coupled to a write enable input. The collector of a first one of the emitter-coupled transistors serves as a current source for a second differential stage including a second pair of emitter-coupled transistors, a first one having its base connected to a second reference voltage and the second having its base coupled to a data input conductor. The two respective outputs of the second differential stage are coupled to emitter follower drivers, and are also independently coupled through a pair of respective diode-connected transistors to the collector of the first transistor of the first emitter coupled pair.
Inventors
- 👤 John R. Reinert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:23
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/413; G11C11/414; G11C11/416
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
125 words
A sense-write circuit comprising: first and second transistors having their emitters coupled together to a first current source means; third and fourth transistors having their emitters coupled together to the collector of said first transistor; the base of said first transistor being responsive to a write signal, and the base of said third transistor being responsive to a data input signal; first and second rectifying means coupled between the collector of said second transistor and the collectors of said third and fourth transistors, respectively; and means coupled to the collectors of said third and fourth transistors for writing information into a memory cell from said third and fourth transistors and establishing a pair of reference voltages for effecting reading information out of a memory cell.
Claim 2
Dependent Claim
125 words
A sense-write circuit comprising: first and second transistors having their emitters coupled together to a first current source means; third and fourth transistors having their emitters coupled together to the collector of said first transistor; the base of said first transistor being responsive to a write signal, and the base of said third transistor being responsive to a data input signal; first and second rectifying means coupled between the collector of said second transistor and the collectors of said third and fourth transistors, respectively; and means coupled to the collectors of said third and fourth transistors for writing information into a memory cell from said third and fourth transistors and establishing a pair of reference voltages for effecting reading information out of a memory cell.
Claim 3
Dependent Claim
14 words
The sense-write circuit as recited in claim 1 wherein said transistors are NPN transistors.
Claim 4
Dependent Claim
51 words
The sense-write circuit as recited in claim 1 wherein said first and second rectifying means are each diode-connected transistors having their emitters coupled to the collector of said second transistor and their collectors and bases connected to the collector of said third transistor and the collector of said fourth transistor, respectively.
Claim 5
Dependent Claim
56 words
The sense-write circuit as recited in claim 1 further including first voltage reference means coupled to the base of said second transistor for establishing a reference potential thereat, and further including second voltage reference means coupled to the base of said fourth transistor for establishing a second reference voltage greater than said first reference voltage thereat.
Claim 6
Dependent Claim
62 words
The sense-write circuit as recited in claim 4 further including voltage translation means coupled between a write enable input and the base of said first transistor for translating the voltage level of a write enable input to a voltage above or below said first reference voltage, depending on whether said write enable input is at a logical "1" or a logical "0".
Claim 7
Dependent Claim
29 words
The sense-write circuit as recited in claim 1 further including first and second emitter followers having inputs coupled, respectively, to said collectors of said third and fourth transistors, respectively.
Claim 8
Dependent Claim
87 words
The sense-write circuit as recited in claim 6 further including a fifth transistor having its base coupled to the output of said first emitter follower, its emitter connected to a first bit-sense conductor, and its collector coupled by means of a first resistor to a voltage conductor, and further including a sixth transistor having its emitter coupled to a second bit-sense conductor, its base coupled to the output of said second emitter follower, and its collector coupled by means of a second resistor to said voltage conductor.
Claim 9
Dependent Claim
59 words
The sense-write circuit as recited in claim 1 further including a first resistor having one terminal coupled to the collector of said third transistor and its other terminal coupled to a voltage conductor, and further including a second transistor having one terminal coupled to the collector of said fourth transistor and its other terminal coupled to said voltage conductor.
Claim 10
Dependent Claim
23 words
The sense-write circuit as recited in claim 8 further including a third resistor coupling said first and second resistors to said voltage conductor.
Claim 11
Dependent Claim
100 words
A sense-write circuit for effecting writing information into and reading information out of a memory cell comprising: a first pair of differentially coupled transistors responsive to a write signal, a second pair of differentially coupled transistors responsive to a data input signal having their emitters coupled to the collector of a first transistor of said first pair of transistors, and means coupled to the collectors of said second pair of transistors for writing information into a memory cell from said second pair of transistors and establishing a pair of reference voltages for effecting reading information out of a memory cell.
Claim 12
Dependent Claim
100 words
A sense-write circuit for effecting writing information into and reading information out of a memory cell comprising: a first pair of differentially coupled transistors responsive to a write signal, a second pair of differentially coupled transistors responsive to a data input signal having their emitters coupled to the collector of a first transistor of said first pair of transistors, and means coupled to the collectors of said second pair of transistors for writing information into a memory cell from said second pair of transistors and establishing a pair of reference voltages for effecting reading information out of a memory cell.
Claim 13
Dependent Claim
38 words
A sense-write circuit as recited in claim 10 further comprising: a pair of rectifying means coupled between the collectors of said second pair of transistors and the collector of a second transistor of said first pair of transistors.
Claim 14
Dependent Claim
136 words
A sense-write circuit for effecting writing information into and reading information out of a plurality of memory cells comprising: a current source having a current of magnitude I, first and second load resistors, and differential current switching means coupled between said current source and said load resistors, and having terminals for receiving a write signal and a data signal, said differential current switching means providing a current substantially of magnitude I/2 to each of said load resistors for generating a pair of reference voltages for reading when said write signal is at a first logic state, and being responsive to said data signal for providing a current substantially of magnitude I to one of said load resistors for generating first and second data voltages for writing when said write signal is at a second logic state.
Claim 15
Dependent Claim
136 words
A sense-write circuit for effecting writing information into and reading information out of a plurality of memory cells comprising: a current source having a current of magnitude I, first and second load resistors, and differential current switching means coupled between said current source and said load resistors, and having terminals for receiving a write signal and a data signal, said differential current switching means providing a current substantially of magnitude I/2 to each of said load resistors for generating a pair of reference voltages for reading when said write signal is at a first logic state, and being responsive to said data signal for providing a current substantially of magnitude I to one of said load resistors for generating first and second data voltages for writing when said write signal is at a second logic state.
Claim 16
Dependent Claim
34 words
A sense-write circuit as recited in claim 12 wherein: said first data voltage is substantially more positive than said reference voltages and said second data voltage is substantially more negative than said reference voltages.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-03 | 1982-01-02 | 1982-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-03 | 1986-01-02 | 1986-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-03 | 1990-01-02 | 1990-07-04 | $7700.00 | Window Closed / Lapsed |