US4085011A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the production of a thin-film circuit
Assignee: Siemens AG
•
Filing: 1976-10-15
•
Granted: 1978-04-18
•
Expires: 1996-10-15
Abstract
Abstract A thin-film circuit which includes temperature-compensated RC elements consisting of an AlTa alloy layer having approximately 3-17 at % tantalum in aluminum, which is sputtered or vapor deposited onto a non-conductive substrate, is produced by a process in which the AlTa alloy layer is deposited in an operative, reactive gas mixture, containing at least one of the gases O 2 , CO 2 , and N 2 and the TC R value is established by the tantalum component of the alloy layer and/or partial pressure of the reactive gas, and the TC C value of the capacitors formed from the AlTa alloy layer is established by tempering to be at least approximately oppositely equal to the TC R value.
Inventors
- 👤 Wilfried Juergens
- 👤 Manfred Roschy
- 👤 Alois Schauer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:50
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/06; H01C17/075; H01C17/12; Y; Y10; Y10S; Y10S205/00; Y10S205/92
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
108 words
A process for producing a thin-film circuit which includes temperature-compensated RC elements which have an AlTa alloy layer of approximately 3-17 at% tantalum in aluminum, comprising the steps of: sputtering the AlTa alloy onto a non-conductive substrate in an operative reactive gas taken from the group consisting of O 2 , CO 2 and N 2 and mixtures thereof, the TC R value being set by the tantalum component of the alloy layer; anodizing the layer to provide the dielectric of the capacitor; and annealing the element to adjust the TC C value which is approximately equal and opposite to the TC R value of the Alta layer.
Claim 2
Dependent Claim
108 words
A process for producing a thin-film circuit which includes temperature-compensated RC elements which have an AlTa alloy layer of approximately 3-17 at% tantalum in aluminum, comprising the steps of: sputtering the AlTa alloy onto a non-conductive substrate in an operative reactive gas taken from the group consisting of O 2 , CO 2 and N 2 and mixtures thereof, the TC R value being set by the tantalum component of the alloy layer; anodizing the layer to provide the dielectric of the capacitor; and annealing the element to adjust the TC C value which is approximately equal and opposite to the TC R value of the Alta layer.
Claim 3
Dependent Claim
125 words
A process for producing a thin-film circuit which includes temperature-compensated RC elements which have an AlTa alloy layer of approximately 3-17 at% tantalum in aluminum, comprising the steps of: sputtering the AlTa alloy onto a non-conductive substrate in an operative reactive gas taken from the group consisting of O 2 , CO 2 and N 2 and mixtures thereof at a pressure in the range of 3.75 × 10 -5 to 7.5 × 10 -4 Torr, the TC R value being set by the partial pressure of the reactive gas; anodizing the layer to provide the dielectric of the capacitor; and annealing the element to adjust a TC C value which is approximately equal and opposite to the TC R value of the Alta layer.
Claim 4
Dependent Claim
125 words
A process for producing a thin-film circuit which includes temperature-compensated RC elements which have an AlTa alloy layer of approximately 3-17 at% tantalum in aluminum, comprising the steps of: sputtering the AlTa alloy onto a non-conductive substrate in an operative reactive gas taken from the group consisting of O 2 , CO 2 and N 2 and mixtures thereof at a pressure in the range of 3.75 × 10 -5 to 7.5 × 10 -4 Torr, the TC R value being set by the partial pressure of the reactive gas; anodizing the layer to provide the dielectric of the capacitor; and annealing the element to adjust a TC C value which is approximately equal and opposite to the TC R value of the Alta layer.
Claim 5
Dependent Claim
135 words
A process for producing a thin-film circuit which includes temperature-compensated RC elements which have an AlTa alloy layer of approximately 3-17 at% tantalum in aluminum, comprising the steps of: sputtering the AlTa alloy onto a non-conductive substrate in an operative reactive gas taken from the group consisting of O 2 , CO 2 and N 2 and mixtures thereof, at a partial pressure in the range of 3.75 × 10 -5 to 7.5 × 10 -4 Torr, the TC R value being set by the tantalum component of the alloy layer and by the partial pressure of the reactive gas; anodizing the layer to provide the dielectric of the capacitor; and annealing the element to adjust a TC C value which is approximately equal and opposite to the TC R value of the AlTa layer.
Claim 6
Dependent Claim
135 words
A process for producing a thin-film circuit which includes temperature-compensated RC elements which have an AlTa alloy layer of approximately 3-17 at% tantalum in aluminum, comprising the steps of: sputtering the AlTa alloy onto a non-conductive substrate in an operative reactive gas taken from the group consisting of O 2 , CO 2 and N 2 and mixtures thereof, at a partial pressure in the range of 3.75 × 10 -5 to 7.5 × 10 -4 Torr, the TC R value being set by the tantalum component of the alloy layer and by the partial pressure of the reactive gas; anodizing the layer to provide the dielectric of the capacitor; and annealing the element to adjust a TC C value which is approximately equal and opposite to the TC R value of the AlTa layer.
References Cited (Backward Citations)
US3627577A
Cited
US3607679A
Cited
US3718565A
Cited
US3738919A
Cited
US3955039A
Cited
US4020222A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-04-17 | 1981-10-17 | 1982-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-04-17 | 1985-10-17 | 1986-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-04-17 | 1989-10-17 | 1990-04-18 | $7700.00 | Window Closed / Lapsed |