US3955039A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Aluminum tantalum layers for electronic devices
Assignee: Siemens AG
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Filing: 1973-10-19
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Granted: 1976-05-04
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Expires: 1993-10-19
Abstract
Abstract Al-Ta alloy films containing 2 to 20 atomic % of Ta in Al exhibit an improved temperature stability. An Al-alloy film containing 7 atomic % of Ta has a resistivity of 60 mu OMEGA cm, a temperature coefficient of resistance of +100 ppm DEG /K and a sparking potential of about 400 V when anodizing in 0.1% H3PO4. An Al-alloy film containing 15 atomic % of Ta has a specific resistance of 200 mu OMEGA cm, a temperature coefficient of resistance of -100 ppm DEG /K and a sparking potential of about 300 V when anodizing in 0.1% H3PO4. The alloy films are applied on a non-conductive substrate, as by RF-cathode sputtering in a desired thickness and are useful for thin-film circuits, discrete resistors, capacitors, etc.
Inventors
- 👤 Manfred Roschy
- 👤 Alois Schauer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 02:15
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/006; H10; H10N; H10N97/00; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
79 words
An aluminum-rich Al-Ta alloy film for electrical devices, such as thin-layer circuits, discrete resistors, capacitors and the like on a non-conductive substrate, said film being characterized as having a resistivity in micro ohm centimeters of about 60, having a sparking potential in 0.1% H 3 PO 4 of about 400 volts, being temperature-stable and oxidation-resistant in air at a temperature of about 500° C., said Al-Ta alloy containing about 7 atomic % Ta and having a fcc Al-lattice structure.
Claim 2
Dependent Claim
79 words
An aluminum-rich Al-Ta alloy film for electrical devices, such as thin-layer circuits, discrete resistors, capacitors and the like on a non-conductive substrate, said film being characterized as having a resistivity in micro ohm centimeters of about 60, having a sparking potential in 0.1% H 3 PO 4 of about 400 volts, being temperature-stable and oxidation-resistant in air at a temperature of about 500° C., said Al-Ta alloy containing about 7 atomic % Ta and having a fcc Al-lattice structure.
Claim 3
Dependent Claim
79 words
An aluminum-rich Al-Ta alloy film for electrical devices, such as thin-layer circuits, discrete resistors, capacitors and the like on a non-conductive substrate, said film being characterized as having a resistivity in micro ohm centimeters of about 200, having a sparking potential in 0.1% H 3 PO 4 of about 300 volts, being temperature-stable and oxidation-resistant in air at a temperature of about 500° C., said Al-Ta alloy containing about 15 atomic % Ta and having an amorphous lattice structure.
Claim 4
Dependent Claim
79 words
An aluminum-rich Al-Ta alloy film for electrical devices, such as thin-layer circuits, discrete resistors, capacitors and the like on a non-conductive substrate, said film being characterized as having a resistivity in micro ohm centimeters of about 200, having a sparking potential in 0.1% H 3 PO 4 of about 300 volts, being temperature-stable and oxidation-resistant in air at a temperature of about 500° C., said Al-Ta alloy containing about 15 atomic % Ta and having an amorphous lattice structure.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-05-04 | 1979-11-03 | 1980-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-05-04 | 1983-11-03 | 1984-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-05-04 | 1987-11-03 | 1988-05-04 | $7700.00 | Window Closed / Lapsed |