Abstract In a MOS integrated circuit, a voltage level detecting and indicating circuit apparatus is provided. In the apparatus there is provided a MOS integrated circuit means responsive to a change in the magnitude of a voltage in the circuit. In the circuit means there is provided a first node at which occurs a first signal when the magnitude of the voltage is changed to a first predetermined magnitude, said occurrence of said first signal being independent of at least one of a plurality of process variables including threshold voltage, mobility, body effect factor and lateral diffusion within a predetermined range of magnitude of said variable, and a second node at which occurs a second signal when said magnitude of said voltage is changed to a second predetermined magnitude and a third signal when said magnitude of said voltage is changed to the third predetermined magnitude, said occurrence of said second and third signals being dependent on at least one of said plurality of process variables.
In a MOS integrated circuit, a voltage level detecting and indicating circuit apparatus comprising: MOS integrated circuit means responsive to a change in the magnitude of a voltage in said circuit having a first node at which occurs a first signal when said magnitude of said voltage is changed to a first predetermined magnitude, said occurrence of said first signal being independent of at least one of a plurality of process variables including threshold voltage, mobility, body effect factor and lateral diffusion within a predetermined range of magnitude of said variable, and a second node at which occurs a second signal when said magnitude of said voltage is changed to a second predetermined magnitude and a third signal when said magnitude of said voltage is changed to a third predetermined magnitude, said occurrence of said second and third signals being dependent on at least one of said plurality of process variables.
Claim 2
Dependent Claim
151 words
In a MOS integrated circuit, a voltage level detecting and indicating circuit apparatus comprising: MOS integrated circuit means responsive to a change in the magnitude of a voltage in said circuit having a first node at which occurs a first signal when said magnitude of said voltage is changed to a first predetermined magnitude, said occurrence of said first signal being independent of at least one of a plurality of process variables including threshold voltage, mobility, body effect factor and lateral diffusion within a predetermined range of magnitude of said variable, and a second node at which occurs a second signal when said magnitude of said voltage is changed to a second predetermined magnitude and a third signal when said magnitude of said voltage is changed to a third predetermined magnitude, said occurrence of said second and third signals being dependent on at least one of said plurality of process variables.
Claim 3
Dependent Claim
34 words
An apparatus according to claim 1 wherein said second and third signals at said second node occur at different magnitudes depending upon the direction of change of said voltage thereby providing a hysteresis-like output.
Claim 4
Dependent Claim
29 words
The apparatus of claim 1 wherein said voltage is the voltage applied to power said circuit and said signals function to indicate when said voltage is below predetermined levels.