Patent US4043025A successfully refreshed from Google Patents.
US4043025A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-aligned CMOS process for bulk silicon and insulating substrate device
Assignee: National Semiconductor Corp
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Filing: 1976-06-17
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Granted: 1977-08-23
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Expires: 1996-06-17
Abstract
Abstract The method for fabrication of a self-aligned gate CMOS structure which employs no additional masking steps as compared to the standard CMOS fabrication process, this improved process providing the advantages of self-alignment between the N+ and P+ source and drain diffusions with respect to their gate regions, and metal contact openings which do not overlap the edges of the P+ or N+ source and drain regions. The self-aligning gate region is defined by a silicon nitride gate layer. Several embodiments of the novel process are described.
Inventors
- 👤 Gregorio Spadea
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:17
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6757; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/017; H10D84/02; H10D84/03; H10D84/038; H10D86/00; H10P; H10P76/00; H10P76/40
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
387 words
The method for manufacture of a silicon semiconductor device comprising the steps of: forming a first semiconductor layer of a first conductivity type over the surface of an insulating substrate, forming an oxide layer over the surface of said first semiconductor layer, forming a silicon nitride layer over the surface of said oxide layer, masking and etching said silicon nitride and said oxide layer to form openings therein at first regions of said first semiconductor layer, diffusing a dopant through said latter openings to form source and drain regions of said conductivity type in said first regions of said first semiconductor layer with a gate region extending between the source and drain regions, a thick oxide layer being formed over said source and drain regions during said diffusion, masking said gate region and a portion of the oxide layer at the source and drain regions adjacent said gate region, forming a thin layer channel region of a second conductivity type in a second region of said first semiconductor layer removed from said first region, etching both the thick oxide layer and the underlying first semiconductor layer in the outer portions of said first region to isolate the diffused source and drain regions in said first region of said first semiconductor layer from said second region of said first semiconductor layer, forming an insulating oxide layer over the exposed surfaces of said first semiconductor layer, and simultaneously driving said thin layer channel region into said first semiconductor layer, masking and etching openings through said silicon nitride layer and said underlying silicon oxide layer to define source and drain regions separated by a gate region in said second region of said first semiconductor layer, diffusing a dopant through said latter openings to form source and drain regions in said second region of said first semiconductor layer, masking and etching openings in the oxide layer over said source and drain regions in said first and second regions of said first semiconductor layer to form connect openings thereto, etching away the silicon nitride layer remaining over the gate regions, depositing a metallization layer over the device, masking said metal layer to define the metal connect and interconnect openings to the various source, drain, and gate regions, and etching the metal to form the gate electrodes and the source and drain connects.
Claim 2
Independent Claim
387 words
The method for manufacture of a silicon semiconductor device comprising the steps of: forming a first semiconductor layer of a first conductivity type over the surface of an insulating substrate, forming an oxide layer over the surface of said first semiconductor layer, forming a silicon nitride layer over the surface of said oxide layer, masking and etching said silicon nitride and said oxide layer to form openings therein at first regions of said first semiconductor layer, diffusing a dopant through said latter openings to form source and drain regions of said conductivity type in said first regions of said first semiconductor layer with a gate region extending between the source and drain regions, a thick oxide layer being formed over said source and drain regions during said diffusion, masking said gate region and a portion of the oxide layer at the source and drain regions adjacent said gate region, forming a thin layer channel region of a second conductivity type in a second region of said first semiconductor layer removed from said first region, etching both the thick oxide layer and the underlying first semiconductor layer in the outer portions of said first region to isolate the diffused source and drain regions in said first region of said first semiconductor layer from said second region of said first semiconductor layer, forming an insulating oxide layer over the exposed surfaces of said first semiconductor layer, and simultaneously driving said thin layer channel region into said first semiconductor layer, masking and etching openings through said silicon nitride layer and said underlying silicon oxide layer to define source and drain regions separated by a gate region in said second region of said first semiconductor layer, diffusing a dopant through said latter openings to form source and drain regions in said second region of said first semiconductor layer, masking and etching openings in the oxide layer over said source and drain regions in said first and second regions of said first semiconductor layer to form connect openings thereto, etching away the silicon nitride layer remaining over the gate regions, depositing a metallization layer over the device, masking said metal layer to define the metal connect and interconnect openings to the various source, drain, and gate regions, and etching the metal to form the gate electrodes and the source and drain connects.
Claim 3
Dependent Claim
36 words
The method as claimed in claim 1 wherein the step of forming the channel region of a second conductivity type comprises the ion implantation of the dopant in said second region of the first semiconductor layer.
Claim 4
Dependent Claim
23 words
The method as claimed in claim 1 wherein said first conductivity type is N type and said second conductivity type is P type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-22 | 1981-02-21 | 1981-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-22 | 1985-02-21 | 1985-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-22 | 1989-02-21 | 1989-08-23 | $7700.00 | Window Closed / Lapsed |