Semiconductor device and method of manufacturing the device

Claim 2

A semiconductor device having a semiconductor body comprising at least one insulated gate field effect transistor, said body comprising a first region of a first type conductivity and a second region of a second type conductivity adjoining the surface and forming a p-n junction with the first region, said insulated gate field effect transistor having spaced source and drain zones of the first type conductivity in the second region and adjoining the surface, at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, a pattern of electrically insulating material at least partly inset in the semiconductor body and comprising a portion entirely surrounding the second region at the surface, the outer dimensions of said second region being defined solely by said inset pattern portion and by the p-n junction between the first and the second regions which adjoins said portion of the inset pattern, the source and drain zones also adjoining the inset pattern, said first region having a further part adjoining the surface outside said inset pattern portion, and a second circuit element comprising at least one surface zone of the second conductivity type in said further part of the first region and adjoining said inset pattern, said second region of the second type conductivity having a doping profile such that in a zone adjoining the surface the doping concentration increases to a maximum value from the surface to the interior.

Claim 3

A semiconductor device as claimed in claim 1, wherein said maximum concentration has such a high value as to prevent channel formation along the inset insulating pattern between the first region and the source or drain region present in the second region.

Claim 4

A semiconductor device as claimed in claim 2, wherein the source and drain regions present in the second region are situated entirely within the said zone adjoining the surface containing the said increasing doping concentration.

Claim 5

A semiconductor device as claimed in claim 1, wherein the depth of said maximum concentration is smaller than that of the inset insulating pattern surrounding the second region.

Claim 6

A CMOS semiconductor device having a semiconductor body comprising at least first and second complementary IGFETS, said body comprising a first region of a first type conductivity and a second region of a second type conductivity adjoining the surface and forming a p-n junction with the first region, said first IGFET having spaced source and drain zones of the first type conductivity in the second region and adjoining the surface and at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, and a pattern of electrically insulating material at least partly inset in the semiconductor body and comprising a first portion entirely surrounding the second region at the surface and a second portion entirely surrounding a further part of the first region outside the first inset pattern portion and adjoining the surface, the outer dimensions of said second region being defined wholly by said first pattern portion and by the p-n junction between the first and the second regions which adjoins said first portion of the inset pattern, the source and drain zones of the first IGFET also adjoining the inset pattern, said second IGFET having spaced source and drain surface zones of the second type conductivity in the said further part of the first region and also adjoining the inset pattern and at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, the inset pattern also comprising a portion which surrounds a third region of the second type conductivity which adjoins the surface and adjoins the said inset pattern, said third region forming a p-n junction with the first region, said third region having at least a further zone of the first type conductivity adjoining the surface which, together with the third region, forms part of a bipolar circuit element, the said further zone of the first type conductivity adjoining the inset pattern, the third region forming the base zone of a vertical bipolar transistor of which the said further zone and the first region forming the emitter and collector zones, and auxiliary gate electrodes provided above the third region and separated from the semiconductor surface by an insulating layer and DC connected to the base zone of the bipolar transistor so as to prevent the formation of stray current channels.

Claim 7

A CMOS semiconductor device having a semiconductor body comprising at least first and second complementary IGFETS, said body comprising a first region of a first type conductivity and a second region of a second type conductivity adjoining the surface and forming a p-n junction with the first region, said first IGFET having spaced source and drain zones of the first type conductivity in the second region and adjoining the surface and at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, and a pattern of electrically insulating material at least partly inset in the semiconductor body and comprising a first portion entirely surrounding the second region at the surface and a second portion entirely surrounding a further part of the first region outside the first inset pattern portion and adjoining the surface, the outer dimensions of said second region being defined wholly by said first pattern portion and by the p-n junction between the first and the second regions which adjoins said first portion of the inset pattern, the source and drain zones of the first IGFET also adjoining the inset pattern, said second IGFET having spaced source and drain surface zones of the second type conductivity in the said further part of the first region and also adjoining the inset pattern and at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, the inset pattern also comprising a portion which surrounds a third region of the second type conductivity which adjoins the surface and adjoins the said inset pattern, said third region forming a p-n junction with the first region, said third region having at least a further zone of the first type conductivity adjoining the surface which, together with the third region, forms part of a bipolar circuit element, the said further zone of the first type conductivity adjoining the inset pattern, the third region forming the base zone of a vertical bipolar transistor of which the said further zone and the first region forming the emitter and collector zones, and auxiliary gate electrodes provided above the third region and separated from the semiconductor surface by an insulating layer and DC connected to the base zone of the bipolar transistor so as to prevent the formation of stray current channels.

Claim 8

A semiconductor device having a semiconductor body comprising at least one insulated gate field effect transistor, said body comprising a first region of a first type conductivity and a second region of a second type conductivity adjoining the surface and forming a p-n junction with the first region, said insulated gate field effect transistor having spaced source and drain zones of the first type conductivity in the second region and adjoining the surface, at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, a pattern of electrically insulating material at least partly inset in the semiconductor body and comprising a portion entirely surrounding the second region at the surface, the outer dimensions of said second region being defined solely by said inset pattern portion and by the p-n junction between the first and the second regions which adjoins said portion of the inset pattern, the source and drain zones also adjoining the inset pattern, said first region having a further part adjoining the surface outside said inset pattern portion, a second circuit element comprising at least one surface zone of the second conductivity type in said further part of the first region and adjoining said inset pattern, said second region having a portion extending to and adjoining the surface through an aperture in one of said source and drain zones, said aperture being laterally bounded only by said one zone and the inset pattern, and a conductive layer on the surface and making contact with said one zone and with the second region portion in said aperture and constituting a common contact for both.

Claim 9

A semiconductor device having a semiconductor body comprising at least one insulated gate field effect transistor, said body comprising a first region of a first type conductivity and a second region of a second type conductivity adjoining the surface and forming a p-n junction with the first region, said insulated gate field effect transistor having spaced source and drain zones of the first type conductivity in the second region and adjoining the surface, at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, a pattern of electrically insulating material at least partly inset in the semiconductor body and comprising a portion entirely surrounding the second region at the surface, the outer dimensions of said second region being defined solely by said inset pattern portion and by the p-n junction between the first and the second regions which adjoins said portion of the inset pattern, the source and drain zones also adjoining the inset pattern, said first region having a further part adjoining the surface outside said inset pattern portion, a second circuit element comprising at least one surface zone of the second conductivity type in said further part of the first region and adjoining said inset pattern, said second region having a portion extending to and adjoining the surface through an aperture in one of said source and drain zones, said aperture being laterally bounded only by said one zone and the inset pattern, and a conductive layer on the surface and making contact with said one zone and with the second region portion in said aperture and constituting a common contact for both.

Claim 10

A CMOS semiconductor device having a semiconductor body comprising at least first and second complementary IGFETS, said body comprising a first region of a first type conductivity and a second region of a second type conductivity adjoining the surface and forming a p-n junction with the first region, said first IGFET having spaced source and drain zones of the first type conductivity in the second region and adjoining the surface and at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, and a pattern of electrically insulating material at least partly inset in the semiconductor body and comprising a first portion entirely surrounding the second region at the surface and a second portion entirely surrounding a further part of the first region outside the first inset pattern portion and adjoining the surface, the outer dimensions of said second region being defined wholly by said first pattern portion and by the p-n junction between the first and the second regions which adjoins said first portion of the inset pattern, the source and drain zones of the first IGFET also adjoining the inset pattern, said second IGFET having spaced source and drain surface zones of the second type conductivity in the said further part of the first region and also adjoining the inset pattern and at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, the gate electrode layers of both the first and second IGFETS being constituted by polycrystalline silicon material incorporating the same type dopants.

Claim 11

A CMOS semiconductor device having a semiconductor body comprising at least first and second complementary IGFETS, said body comprising a first region of a first type conductivity and a second region of a second type conductivity adjoining the surface and forming a p-n junction with the first region, said first IGFET having spaced source and drain zones of the first type conductivity in the second region and adjoining the surface and at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, and a pattern of electrically insulating material at least partly inset in the semiconductor body and comprising a first portion entirely surrounding the second region at the surface and a second portion entirely surrounding a further part of the first region outside the first inset pattern portion and adjoining the surface, the outer dimensions of said second region being defined wholly by said first pattern portion and by the p-n junction between the first and the second regions which adjoins said first portion of the inset pattern, the source and drain zones of the first IGFET also adjoining the inset pattern, said second IGFET having spaced source and drain surface zones of the second type conductivity in the said further part of the first region and also adjoining the inset pattern and at least one gate electrode layer extending over the space between the source and drain zones and being separated from the semiconductor body by an insulating layer, the gate electrode layers of both the first and second IGFETS being constituted by polycrystalline silicon material incorporating the same type dopants.

Claim 12

A semiconductor device as claimed in claim 7, wherein the polycrystalline silicon gate dopant is phosphorus.

Claim 13

A semiconductor device as claimed in claim 8, wherein the first region is N type, and the second region is P type.