US4008485A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium arsenide infrared light emitting diode
Assignee: Hitachi Ltd
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Filing: 1975-06-20
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Granted: 1977-02-15
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Expires: 1995-06-20
Abstract
Abstract A gallium arsenide infrared-light emitting diode in which an Si-doped p-type GaAs layer is formed on an Si-doped n-type GaAs layer which is performed on an n-type GaAs substrate doped with at least one selected from Sn, Se, Te and S.
Inventors
- 👤 Tadahiko Miyoshi
- 👤 Yasutoshi Kurihara
- 👤 Mitsuru Ura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:43
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/915
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
150 words
A gallium arsenide light emitting diode comprising a semiconductor body with a pair of principal surfaces, said semiconductor body including (i) a first region of GaAs doped with at least one selected from the group consisting of Sn, Se, Te and S and having an n conductivity type, a first electrode being provided in ohmic contact with that surface of said first region which forms one of said principal surfaces of said semiconductor body, (ii) a second region of GaAs doped with Si and having an n conductivity type, said second region being disposed adjacent to said first region, and (iii) a third region of GaAs doped with Si and having a p conductivity type, said third region being disposed adjacent to said second region, a second electrode being provided in ohmic contact with that surface of said third region which forms the other principal surface of said semiconductor body.
Claim 2
Dependent Claim
150 words
A gallium arsenide light emitting diode comprising a semiconductor body with a pair of principal surfaces, said semiconductor body including (i) a first region of GaAs doped with at least one selected from the group consisting of Sn, Se, Te and S and having an n conductivity type, a first electrode being provided in ohmic contact with that surface of said first region which forms one of said principal surfaces of said semiconductor body, (ii) a second region of GaAs doped with Si and having an n conductivity type, said second region being disposed adjacent to said first region, and (iii) a third region of GaAs doped with Si and having a p conductivity type, said third region being disposed adjacent to said second region, a second electrode being provided in ohmic contact with that surface of said third region which forms the other principal surface of said semiconductor body.
Claim 3
Dependent Claim
22 words
A gallium aresenide light emitting diode as claimed in claim 1, wherein the thickness of said first region is about 200 μ.
Claim 4
Dependent Claim
23 words
A gallium arsenide light emitting diode as claimed in claim 1, wherein the thickness of said second region is 5 - 20μ .
Claim 5
Dependent Claim
21 words
A gallium aresenide light emitting diode as claimed in claim 1, wherein the thickness of said third region is about 50μ.
Claim 6
Dependent Claim
137 words
A gallium arsenide light emitting diode comprising a semiconductor body with a pair of principal surfaces, said semiconductor body including (i) a first region of GaAs doped with Sn and having an n conductivity type, a first electrode being provided in ohmic contact with that surface of said first region which forms one of said principal surface of said semiconductor body, (ii) a second region of GaAs doped with Si and having an n conductivity type, said second region being disposed adjacent to said first region, and (iii) a third region of GaAs doped with Si and having a p conductivity type, said third region being disposed adjacent to said second region, a second electrode being provided in ohmic contact with that surface of said third region which forms the other principal surface of said semiconductor body.
Claim 7
Dependent Claim
137 words
A gallium arsenide light emitting diode comprising a semiconductor body with a pair of principal surfaces, said semiconductor body including (i) a first region of GaAs doped with Sn and having an n conductivity type, a first electrode being provided in ohmic contact with that surface of said first region which forms one of said principal surface of said semiconductor body, (ii) a second region of GaAs doped with Si and having an n conductivity type, said second region being disposed adjacent to said first region, and (iii) a third region of GaAs doped with Si and having a p conductivity type, said third region being disposed adjacent to said second region, a second electrode being provided in ohmic contact with that surface of said third region which forms the other principal surface of said semiconductor body.
Claim 8
Dependent Claim
35 words
A gallium aresenide light emitting diode as claimed in claim 5, wherein the carrier concentration of Sn in said first region is 5 × 10 17 - 3 × 10 18 cm - 3 .
Claim 9
Dependent Claim
21 words
A gallium arsenide light emitting diode as claimed in claim 6, wherein the thickness of said first region is about 200μ.
Claim 10
Dependent Claim
23 words
A gallium arsenide light emitting diode as claimed in claim 6, wherein the thickness of said second region is 5 - 20μ .
Claim 11
Dependent Claim
22 words
A gallium aresenide light emitting diode as claimed in claim 6, wherein the thickness of said third region is about 50μ .
Claim 12
Dependent Claim
147 words
A gallium arsenide light emitting diode comprising a semiconductor body with a pair of principal surfaces, said semiconductor body including (i) a first region of GaAs doped with at least one selected from the group consisting of Se, Te and S and having an n conductivity type, a first electrode being provided in ohmic contact with that surface of said first region which forms one of said principal surfaces of said semiconductor body, (ii) a second region of GaAs doped with Si and having an n conductivity type, said second region being adjacent to said first region, and (iii) a third region of GaAs doped with Si and having a p conductivity type, said third region being adjacent to said second region, a second electrode being provided in ohmic contact with that surface of said third region which forms the other principal surface of said semiconductor body.
Claim 13
Dependent Claim
147 words
A gallium arsenide light emitting diode comprising a semiconductor body with a pair of principal surfaces, said semiconductor body including (i) a first region of GaAs doped with at least one selected from the group consisting of Se, Te and S and having an n conductivity type, a first electrode being provided in ohmic contact with that surface of said first region which forms one of said principal surfaces of said semiconductor body, (ii) a second region of GaAs doped with Si and having an n conductivity type, said second region being adjacent to said first region, and (iii) a third region of GaAs doped with Si and having a p conductivity type, said third region being adjacent to said second region, a second electrode being provided in ohmic contact with that surface of said third region which forms the other principal surface of said semiconductor body.
Claim 14
Dependent Claim
38 words
A gallium arsenide light emitting diode as claimed in claim 10, wherein the carrier concentration of Se, S or Te in said first region is 5 × 10 17 - 1 × 10 18 cm - 3 .
Claim 15
Dependent Claim
22 words
A gallium arsenide light emitting diode as claimed in claim 11, wherein the thickness of said first region is about 200μ .
Claim 16
Dependent Claim
23 words
A gallium arsenide light emitting diode as claimed in claim 11, wherein the thickness of said second region is 5 - 20μ .
Claim 17
Dependent Claim
22 words
A gallium arsenide light emitting diode as claimed in claim 11, wherein the thickness of said third region is about 50μ .
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-02-15 | 1980-08-16 | 1981-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-02-15 | 1984-08-16 | 1985-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-02-15 | 1988-08-16 | 1989-02-15 | $7700.00 | Window Closed / Lapsed |