US3660734A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bond type diode utilizing tin-doped gallium arsenide
Assignee: Hitachi Ltd
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Filing: 1969-09-09
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Granted: 1972-05-02
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Expires: 1989-09-09
Abstract
Abstract A bond type diode which is composed of gallium arsenide doped with tin within the range of 1 X 1016 to 5 X 1017 atoms/cm3, preferably about 3 X 1017 atoms/cm3, of a gold wire containing zinc welded onto a portion of a surface of the tin-doped gallium arsenide, and of an electrode in ohmic contact with the tin-doped gallium arsenide at a portion different from the welded portion.
Inventors
- 👤 Shinya Iida
- 👤 Hitoshi Sato
- 👤 Yutaka Takeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:16
CPC Classifications
H; H10; H10D; H10D99/00; H10D62/00; H10D62/80; H10D62/85; H10D62/854; Y; Y10; Y10S; Y10S148/00; Y10S148/065
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
37 words
A bond type diode according to claim 1, characterized by impurities in said metal wire capable of forming a p-n junction with said gallium arsenide thereby to form a p-n junction between said wire and gallium arsenide.
Claim 2
Dependent Claim
22 words
A bond type diode according to claim 1, wherein the diameter of the junction is within the range of about 1-10 microns.
Claim 3
Dependent Claim
13 words
A bond type diode according to claim 1, characterized by a Schottky junction.
Claim 4
Dependent Claim
81 words
A bond type diode comprising a semiconductor base plate, a tin-doped gallium arsenide disposed on said base plate, a metal wire welded onto a portion of a surface of said gallium arsenide to form a junction with said gallium arsenide, and an electrode in ohmic contact with said base plate provided at a portion of the base plate, characterized by a concentration of tin in the tin-doped gallium arsenide layer within the range of 1 X 1016 -5 X 1017 atoms/cm3.
Claim 5
Dependent Claim
24 words
A bond type diode according to claim 5, wherein the diameter of the junction is within the range of about 1 - 10 microns.
Claim 6
Dependent Claim
17 words
A bond type diode according to claim 5, wherein said semiconductor base plate is of gallium arsenide.
References Cited (Backward Citations)
US3286137A
Cited
US3114088A
Cited
US3457468A
Cited
US3523045A
Cited
US3448349A
Cited
US3451912A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-02 | 1975-11-01 | 1976-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-02 | 1979-11-01 | 1980-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-02 | 1983-11-01 | 1984-05-02 | $7700.00 | Window Closed / Lapsed |