US3666567A
Expired / Lapsed
US
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Method of forming an ohmic contact region in a thin semiconductor layer
Assignee: Raytheon Co
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Filing: 1970-01-15
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Granted: 1972-05-30
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Expires: 1990-01-15
Abstract
Abstract A METHOD OF PROVIDING AN OHMIC CONTACT REGION IN A THIN DOPED SEMICONDUCTOR LAYER IS DISCLOSED. AFTER THE LAYER IS FORMED IN THE SEMICONDUCTOR SUBSTRATE AND THE SUBSTRATE IS ANNEALED, IMPURTIES ARE IMPLANTED INTO THE LAYER AT ROOM TEMPERATURE, THEREBY CREATING A DEFECT REGION IN THE LAYER WHICH PROVIDES GOOD OHMIC CONTACT TO THE LAYER.
Inventors
- 👤 Robert G Hunsperger
- 👤 Ogden J Marsh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 07:45
CPC Classifications
H; H10; H10P; H10P95/00; H10P30/00; H10P30/20; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/065; Y10S148/097
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-30 | 1975-11-29 | 1976-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-30 | 1979-11-29 | 1980-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-30 | 1983-11-29 | 1984-05-30 | $7700.00 | Window Closed / Lapsed |