US3600240A
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Epitaxial growth from solution with amphoteric dopant
Assignee: International Business Machines Corp
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Filing: 1968-12-12
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Granted: 1971-08-17
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Expires: 1988-12-12
Abstract
Abstract P-TYPE GALLIUM ARSENIDE IS GROWN EPITAXIALLY FROM SOLUTION IN GALLIUM ON THE SURFACE OF N-TYPE GALLIUM ARSENIDE, WITH SILICON AS DOPANT ON BOTH SIDE OF THE JUNCTION. A RECOMBINATION RADIATION DEVICE IS MADE BY THE METHOD.
Inventors
- 👤 Hans S Rupprecht
- 👤 Jerry M Woodall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:35
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/915; Y10S438/955
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-16 | 1975-02-15 | 1975-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-16 | 1979-02-15 | 1979-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-16 | 1983-02-15 | 1983-08-17 | $7700.00 | Window Closed / Lapsed |