Patent US3986905A successfully refreshed from Google Patents.
US3986905A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing semiconductor devices with uniform junctions
Assignee: SunEdison Inc
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Filing: 1974-12-16
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Granted: 1976-10-19
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Expires: 1994-12-16
Abstract
Abstract In a high temperature solid-solid diffusion process for diffusing impurities into a semiconductor body from a dopant source material, semiconductor surface attack is prevented by the presence of a layer comprising particles of a material substantially inert to the diffusion between the semiconductor body and dopant source material. Uniform deep regions and/or regions of high conductivity can be obtained, if desired.
Inventors
- 👤 Paul M. Garavaglia
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:26
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/14; H10P32/1408
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
63 words
In a high temperature process for diffusing impurities from a solid diffusion source material, said material being constituted by a sheet containing a dopant, into a solid semiconductor body, the improvement which comprises the diffusion source material and semiconductor body being spaced by a layer comprising particles of an undoped, noncontaminating, particulate material inert to the diffusion conditions, whereby uniform diffusion is achieved.
Claim 2
Dependent Claim
63 words
In a high temperature process for diffusing impurities from a solid diffusion source material, said material being constituted by a sheet containing a dopant, into a solid semiconductor body, the improvement which comprises the diffusion source material and semiconductor body being spaced by a layer comprising particles of an undoped, noncontaminating, particulate material inert to the diffusion conditions, whereby uniform diffusion is achieved.
Claim 3
Dependent Claim
11 words
The process of claim 1, where the semiconductor body is silicon.
Claim 4
Dependent Claim
20 words
The process of claim 2, where the material inert to the diffusion conditions comprises particles of silicon or silicon dioxide.
Claim 5
Dependent Claim
19 words
The process of claim 3, where the particles of silicon or silicon dioxide are adhered to the silicon substrate.
Claim 6
Dependent Claim
23 words
The process of claim 4, where the particles of silicon are adhered to the silicon substrate via a layer of an organosilicon compound.
Claim 7
Dependent Claim
24 words
The process of claim 5, where the particles of silicon have an average particle diameter of from about 10 mils to about 20 mils.
Claim 8
Dependent Claim
12 words
The process of claim 6, where the organosilicon compound is an organosilane.
Claim 9
Dependent Claim
11 words
The process of claim 7, where the organosilane is a tetraalkoxysilane.
Claim 10
Dependent Claim
20 words
The process of claim 7, where the organosilane has the formula ##STR2## where R is an acetate or vinyl group.
Claim 11
Dependent Claim
24 words
The process of claim 8, where the tetraalkoxysilane is tetraethoxysilane and the layer thereof is from about 1,500 A. to about 2,000 A. thick.
Claim 12
Dependent Claim
37 words
The process of claim 4, where the silicon dioxide particles are adhered to the silicon substrate via an organosilicon compound to provide a soft, cushiony, porous layer, said layer lifting from the silicon substrate during the diffusion.
Claim 13
Dependent Claim
12 words
The process of claim 11, where the organosilicon compound is an organosilane.
Claim 14
Dependent Claim
10 words
The process of claim 12, where the organosilicon is tetraalkoxysilane.
Claim 15
Dependent Claim
20 words
The process of claim 11, where the organosilicon has the formula ##STR3## where R is an acetate or vinyl group.
Claim 16
Dependent Claim
21 words
The process of claim 13, where the tetraalkoxysilane is tetraethoxysilane and the layer is about 25 to about 30 mils thick.
Claim 17
Dependent Claim
21 words
The process of claim 15, where said particles of silicon dioxide have a size of about 140 mesh to 160 mesh.
Claim 18
Dependent Claim
46 words
The process of claim 1, where said dopant source material is a prefabricated sheet formed of an organic binder and a solvent therein containing selected impurities of a concentration suficient in magnitude to cause said dopant material to function as a substantially infinite source of impurities.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-10-19 | 1980-04-19 | 1980-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-10-19 | 1984-04-19 | 1984-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-10-19 | 1988-04-19 | 1988-10-19 | $7700.00 | Window Closed / Lapsed |