Patent US3984857A successfully refreshed from Google Patents.
US3984857A
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Heteroepitaxial displays
Assignee: Harris Corp
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Filing: 1975-12-17
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Granted: 1976-10-05
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Expires: 1995-12-17
Abstract
Abstract A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal semiconductor, such as gallium phosphide. The preselected electroluminescent semiconductor material is then epitaxially deposited in single crystal form on the modified surface of the silicon wafer, a step which is not feasible without the modification of the silicon wafer surface. Preferably, the modification is achieved by epitaxially depositing a thin layer of semiconductor material whose lattice structure offers a substantially smaller disparity with the structure of the electroluminescent material than the existing disparity between the silicon wafer and the electroluminescent material.
Inventors
- 👤 Donald R. Mason
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 06:49
CPC Classifications
H; H10; H10H; H10H29/00; H10H29/10; H10H29/14; H10H29/142; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3254; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3446; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/059; Y10S148/072; Y10S148/119
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
184 words
A monolithic light emitting diode display comprising: a single crystal silicon substrate; a plurality of spaced-apart semiconductor p-n junction regions, each p-n junction region consisting of a single crystal layer, each said crystal layer consisting essentially of a Group III-V compound for emission of light in response to electrical energization of the respective p-n junction, each said single crystal layer superposed on said substrate and having a crystal lattice constant different from the crystal lattice constant of said substrate; a graded layer of single crystal semiconductor material interposed between and in adherent contact with each said first-named single crystal layer and said substrate, said graded layer consisting of an alloy of silicon and germanium, said graded layer having a crystal lattice constant substantially matching the crystal lattice constant of said substrate at the boundary therebetween and having a crystal lattice constant substantially matching the crystal lattice constant of the respective first-named single crystal layer at the boundary therebetween; and an active semiconductor component, different from said light emitting p-n junction components, consisting essentially of p-n junctions in said silicon substrate and said graded layer.
Claim 2
Dependent Claim
184 words
A monolithic light emitting diode display comprising: a single crystal silicon substrate; a plurality of spaced-apart semiconductor p-n junction regions, each p-n junction region consisting of a single crystal layer, each said crystal layer consisting essentially of a Group III-V compound for emission of light in response to electrical energization of the respective p-n junction, each said single crystal layer superposed on said substrate and having a crystal lattice constant different from the crystal lattice constant of said substrate; a graded layer of single crystal semiconductor material interposed between and in adherent contact with each said first-named single crystal layer and said substrate, said graded layer consisting of an alloy of silicon and germanium, said graded layer having a crystal lattice constant substantially matching the crystal lattice constant of said substrate at the boundary therebetween and having a crystal lattice constant substantially matching the crystal lattice constant of the respective first-named single crystal layer at the boundary therebetween; and an active semiconductor component, different from said light emitting p-n junction components, consisting essentially of p-n junctions in said silicon substrate and said graded layer.
Claim 3
Dependent Claim
26 words
The monolithic light emitting diode display according to claim 1 wherein said Group III-V compound is selected from the group consisting of GaP, GaAS, and GaAsP.
Claim 4
Dependent Claim
44 words
The monolithic light emitting diode display according to claim 1 wherein said graded layer has a germanium concentration of approximately zero mole percent at the boundary with said substrate and under approximately ten mole percent at the boundary with said first-named single crystal layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-10-05 | 1980-04-05 | 1980-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-10-05 | 1984-04-05 | 1984-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-10-05 | 1988-04-05 | 1988-10-05 | $7700.00 | Window Closed / Lapsed |