Patent US3972689A successfully refreshed from Google Patents.
US3972689A
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Method for vapor growing crystals
Assignee: Unisearch Ltd
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Filing: 1974-11-25
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Granted: 1976-08-03
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Expires: 1994-11-25
Abstract
Abstract A method and a device for vapor growing crystals. The crystals are grown in an evacuated ampoule from a liquified sample source material, such that the source material is separated from the growing crystal by one or more capillaries or the like which provide the only pathway between the sample source and the growing crystal. There is a temperature gradient between the sample source and the growing crystal such that the growing crystal is at a lower temperature than the sample source.
Inventors
- 👤 Anthony Knittel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:01
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/46; Y; Y10; Y10T; Y10T117/00; Y10T117/10
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
78 words
A method for vapour growing crystals inside an evacuated ampoule comprising separating a liquified sample source material from the growing crystal by at least one conductance limiting and diffusion limiting channel which provides the only pathway between the sample source and the growing crystal and which extends into the liquid sample and maintaining a temperature gradient between the sample source and the growing crystal so that the growing crystal is at a lower temperature than the sample source.
Claim 2
Independent Claim
78 words
A method for vapour growing crystals inside an evacuated ampoule comprising separating a liquified sample source material from the growing crystal by at least one conductance limiting and diffusion limiting channel which provides the only pathway between the sample source and the growing crystal and which extends into the liquid sample and maintaining a temperature gradient between the sample source and the growing crystal so that the growing crystal is at a lower temperature than the sample source.
Claim 3
Dependent Claim
28 words
A method for vapour growing crystals as claimed in claim 1 wherein the conductance and diffusion limiting channel is in the form of at least one capillary tube.
Claim 4
Dependent Claim
32 words
A method for vapour growing crystals as claimed in claim 1 wherein the temperature gradient between the sample source and the growing crystal is in the range 100° C to 200° C.
Claim 5
Dependent Claim
22 words
A method for vapour growing crystals as claimed in claim 1 wherein the growing process is initiated with a small seed crystal.
Claim 6
Dependent Claim
25 words
A method for vapour growing crystals as claimed in claim 1 wherein the crystals grown are selected from the group consisting of PbTe and SnTe.
Claim 7
Dependent Claim
27 words
A method for vapour growing crytals as claimed in claim 1 wherein the conductance and diffusion limiting channel comprises at least one hole formed through a plug.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-08-03 | 1980-02-02 | 1980-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-08-03 | 1984-02-02 | 1984-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-08-03 | 1988-02-02 | 1988-08-03 | $7700.00 | Window Closed / Lapsed |