Method of manufacturing semiconducting compounds by vapor growth method

Abstract

Abstract THIS INVENTION RELATES TO A METHOD OF MANUFACTURING SEMICONDUCTING COMPOUNS, PARTICULARLY GAP, WHICH HAS A HIGH DISSOCIATION PRESSURE (ABOUT 39 ATM.) AT ITS MELTING POINT (1465*C.) IN THE CRYSTALILINE INGOT FORM. THE METHOD IS A NEW IMPROVEMENT OF THE VAPOR GROWTH METHOD, AND COMPRISES THE STEP OF MAKING USE OF CRYSTAL GROWING FURNACE HAVING A LOW TEMPERTURE ZONE (T1), A MAXIMUM TEMPERATURE ZONE (T4) AND A HIGH TEMPERATURE ZONE PROVIDING A TEMPERATURE GRADIENT (T2-T2), WHERE T4>T3>T2>T1, THE STEP OF USING A SEALED FUSED SILICA REACTION TUBE HAVING FIRST TEMPERATURE ZONE WHICH IS POSITIONED BETWEEN THE T1 AND T4 ZONES, A SECOND TEMPERATURE ZONE WHICH IS POSITIONED BETWEEN T3 AND T2 ZONES, AND A SEPARATING WALL BETWEEN THE FIRST AND SECOND TEMPERATURE ZONES WITH A THIN SILICA TUBE (CAPILLARY) RETAINED THEREBY TO ALLOW THE VAPOR OF THE VOLATILE CONSTITUENT TO DIFFUSE THROUGH BUT TO PREVENT THE VAPOR OF VOLATILE COMPOUNDS OF THE NON-VOLATILE CONSTIUENTS FROM DIFFUSING THERETHROUGH, THE STEP OF PLACING THE VOLATILE CONSTITUENT SUCH AS PHOSPHOSROUS IN THE FIRST TEMPERATURE ZONE WHERE THE VAPOR PRESSURE OF SAID VOLATILE CONSITUENT IS CONTROLLED BY THE TEMPERATURE T1, AND THE STEP OF POSITIONING THE NONVOLATILE CONSTITUENT SUCH AS GALLIUM AND A TRANSPORT AGENT, PARTICULARLY A HALOGEN OR A HALIDE OF THE NON-VOLATILE CONSTITUENTS IN THE HOTTER PART (T3) OF THE SECOND TEMPERATURE ZONE WHEREIN THE THIN LAYER OF SAID SEMICONDUCTING COMPOUND IS PRODUCED ON THE SURFACE OF THE SOLUTION OF THE NON-VOLATILE CONSTITUENT DUE TO SUPERSATURATION OF THE VOLATILE CONSTITUENT. THIS THIN LAYER OF SEMICONDUCTING COMPOUND REACTS WITH THE TRANSPORT AGENT TO FORM VOLATILE COMPOUNDS WHICH DIFFUSE TO THE COLDER PART (T2) OF THE SECOND TEMPERATURE ZONE AND REACT WITH THE VOLATILE CONSTITUENT TO FORM A CRYSTAL OF SAID SEMICONDUCTING COMPOUND, BUT ARE PREVENTED FROM DIFFUSIN INTO THE FIRST TEMPERATURE ZONE BY SAID SEPARATING WALL.

Inventors

• 👤 Shin-Ichi Akai
• 👤 Katsunosuke Aoyagi

Bibliographic Details