US3957609A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming fine pattern of thin, transparent, conductive film
Assignee: Hitachi Ltd
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Filing: 1974-09-12
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Granted: 1976-05-18
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Expires: 1994-09-12
Abstract
Abstract A thin film mask having a predetermined pattern is formed directly on a thin, transparent, conductive SnO 2 film formed on a dielectric substrate in order to form a fine pattern of the transparent, conductive film and that part of the transparent conductive film which is not covered by the mask is etched away through the bombardment with ions of gas accelerated under the influence of an RF electric field. Suitable masks include photoresists, aluminum, chromium, and manganese.
Inventors
- 👤 Akira Sasano
- 👤 Kikuo Douta
- 👤 Mikio Ashikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:36
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/20; C; C04; C04B; C04B35/00; C04B35/01; C04B35/453; C04B35/457; H01J9/233
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
96 words
A method of forming a fine pattern of a thin, transparent, conductive film of SnO 2 , comprising forming a thin, transparent, conductive film of SnO 2 on a dielectric substrate; vapor-depositing a thin film of a metal selected from the group consisting of aluminum, chromium and manganese directly on said thin, transparent, conductive film of SnO 2 ; etching said thin metal film into a mask pattern; and sputter etching said thin, transparent, conductive film by the bombardment through said mask pattern with ions of gas accelerated under the influence of an RF electric field.
Claim 2
Independent Claim
96 words
A method of forming a fine pattern of a thin, transparent, conductive film of SnO 2 , comprising forming a thin, transparent, conductive film of SnO 2 on a dielectric substrate; vapor-depositing a thin film of a metal selected from the group consisting of aluminum, chromium and manganese directly on said thin, transparent, conductive film of SnO 2 ; etching said thin metal film into a mask pattern; and sputter etching said thin, transparent, conductive film by the bombardment through said mask pattern with ions of gas accelerated under the influence of an RF electric field.
Claim 3
Dependent Claim
26 words
A method as claimed in claim 1, wherein said metal is chromium and the thickness of the chromium film is form 1000 A to 4000 A.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 1, wherein said metal is Cr and said gas includes Ar.
Claim 5
Dependent Claim
17 words
A method as claimed in claim 1, wherein said metal is Al and said gas includes Ar.
Claim 6
Dependent Claim
14 words
A method as claimed in claim 4, wherein said gas includes about 10% oxygen.
Claim 7
Dependent Claim
17 words
A method as claimed in claim 1, wherein said metal is Mn and said gas includes Ar.
Claim 8
Dependent Claim
14 words
A method as claimed in claim 6, wherein said gas includes about 10% oxygen.
Claim 9
Dependent Claim
24 words
A method as claimed in claim 1, wherein said transparent conductive film of SnO 2 has a thickness of about 1,000 to 5,000 A.
Claim 10
Dependent Claim
91 words
A process for forming a thin layer of a transparent conductive film of SnO 2 in the form of a fine pattern on a dielectric substrate comprising forming a continuous thin, transparent, conductive film of SnO 2 on said substrate; forming on said film of SnO 2 a mask composed of aluminum, chromium or manganese; and removing those portions of said film of SnO 2 not covered with said mask by bombarding said portions through said mask with ions of a gas accelerated under the influence of an RF electric field.
Claim 11
Dependent Claim
91 words
A process for forming a thin layer of a transparent conductive film of SnO 2 in the form of a fine pattern on a dielectric substrate comprising forming a continuous thin, transparent, conductive film of SnO 2 on said substrate; forming on said film of SnO 2 a mask composed of aluminum, chromium or manganese; and removing those portions of said film of SnO 2 not covered with said mask by bombarding said portions through said mask with ions of a gas accelerated under the influence of an RF electric field.
Claim 12
Dependent Claim
14 words
The process of claim 9, wherein said mask is formed from chromium or manganese.
References Cited (Backward Citations)
US3436327A
Cited
US3642548A
Cited
US3649503A
Cited
US3847776A
Cited
US3836446A
Cited
US3748246A
Cited
US3791952A
Cited
US3873361A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-05-18 | 1979-11-17 | 1980-05-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-05-18 | 1983-11-17 | 1984-05-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-05-18 | 1987-11-17 | 1988-05-18 | $7700.00 | Window Closed / Lapsed |