US3791952A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for neutralizing charge in semiconductor bodies and dielectric coatings induced by cathodic etching
Assignee: AT&T Inc
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Filing: 1972-07-24
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Granted: 1974-02-12
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Expires: 1992-07-24
Abstract
Abstract IN THE FABRICATION OF SEMICONDUCTOR DEVICES THE MASKED BACKSPUTTERING OF METAL LAYERS TO DEFINE METALLIZATION PATTERNS RESULTS IN A RESIDUAL POSITIVE CHARGE IN UNDERLYING EXPOSED DIELECTRIC FILMS. THIS CHARGE MAY DELECTERIOUSLY AFFECT THE OPERATION OF THE RESULTANT DEVICE STRUCTURE. IN ACCORDANCE WITH THIS INVENTION, THIS POSITIVE CHARGE IS CONTROLLABLY NEUTRALIZED EITHER BY SPUTTERING A THIN METAL FILM, FOR EXPAMPLE, OF NICKEL, OVER THE ENTIRE SURFAWE OR BY OTHERWISE DEPOSITING A THIN METAL FILM WHICH THEN IS EXPOSED TO A SUITABLE SOURCE OF RADIATION. THE METAL FILM THEN IS REMOVED CONVENIENTLY BY THE SAME TECHNIQUE WHICH REMOVES THE METAL BACKSPUTTERING MASK.
Inventors
- 👤 E Labuda
- 👤 W Ryden
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 02:37
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-11 | 1977-08-13 | 1978-02-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-11 | 1981-08-13 | 1982-02-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-11 | 1985-08-13 | 1986-02-12 | $7700.00 | Window Closed / Lapsed |