← Back to Patent Explorer
US3436327A Expired / Lapsed US ⏱️ 0.0 years remaining

Selective sputtering rate circuit forming process

Assignee: Collins Radio Co
•
Filing: 1966-07-18
•
Granted: 1969-04-01
•
Expires: 1986-07-18
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

No abstract record available.

Inventors

  • 👤 William L Shockley

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 04:25
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; C23F; C23F4/00; C23F4/02

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 131 words
IN THE PRODUCTION OF THIN FILM CIRCUITRY, PATTERN FORMING OF CIRCUIT FILMS THROUGH SELECTIVE REMOVAL OF CIRCUIT THIN FILM METAL AS DETERMINED BY THE DIFFERENT SPUTTER RATE OF A PLURALITY OF MATERIALS AND THE PATTERNS OF ORIGINAL DEPOSITION AND OVERLAY OF THE MATERIALS; WHEREIN AT LEAST TWO MATERIALS USED IN FORMING THE CIRCUIT HAVE DIFFERENT SPUTTERING REMOVAL RATES WHEN SUBMITTED TO SPUTTERING AS A CATHODE IN A SPUTTERING PROCESS CIRCUIT; THE THIN FILM CIRCUIT BUILDUP BEING PROCESSED IS POSITIONED AS A CATHODE IN A SPUTTERING PROCESS CIRCUIT AND A VOLTAGE IS APPLIED FOR MAINTAINING THE SPUTTERING PROCESS REMOVAL OF METAL FROM THE CIRCUIT BUILDUP FOR A PROCESS INTERVAL OF TIME PROVIDING METAL REMOVAL AS DESIRED; AND WHEREIN ONE OF SAID MATERIALS IS TANTALUM; AND WHEREIN ANOTHER OF SAID MATERIALS IS ALUMINUM.
Claim 2
Dependent Claim 131 words
IN THE PRODUCTION OF THIN FILM CIRCUITRY, PATTERN FORMING OF CIRCUIT FILMS THROUGH SELECTIVE REMOVAL OF CIRCUIT THIN FILM METAL AS DETERMINED BY THE DIFFERENT SPUTTER RATE OF A PLURALITY OF MATERIALS AND THE PATTERNS OF ORIGINAL DEPOSITION AND OVERLAY OF THE MATERIALS; WHEREIN AT LEAST TWO MATERIALS USED IN FORMING THE CIRCUIT HAVE DIFFERENT SPUTTERING REMOVAL RATES WHEN SUBMITTED TO SPUTTERING AS A CATHODE IN A SPUTTERING PROCESS CIRCUIT; THE THIN FILM CIRCUIT BUILDUP BEING PROCESSED IS POSITIONED AS A CATHODE IN A SPUTTERING PROCESS CIRCUIT AND A VOLTAGE IS APPLIED FOR MAINTAINING THE SPUTTERING PROCESS REMOVAL OF METAL FROM THE CIRCUIT BUILDUP FOR A PROCESS INTERVAL OF TIME PROVIDING METAL REMOVAL AS DESIRED; AND WHEREIN ONE OF SAID MATERIALS IS TANTALUM; AND WHEREIN ANOTHER OF SAID MATERIALS IS ALUMINUM.

References Cited (Backward Citations)

US2702274A Cited
US3385731A Cited
US3394066A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1972-03-31 1972-09-30 1973-04-01 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1976-03-31 1976-09-30 1977-04-01 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1980-03-31 1980-09-30 1981-04-01 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag