US3912923A
Expired / Lapsed
US
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Optical semiconductor device
Assignee: Hitachi Ltd
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Filing: 1973-06-13
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Granted: 1975-10-14
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Expires: 1993-06-13
Abstract
Abstract Light-emitting semiconductor devices consist of a crystal having a Ge concentration of less than 1 ppm and a p-n junction and the method of manufacturing the same. The light-emitting semiconductor device has emission peaks at 1.57 eV in a visible band and can be manufactured inexpensively compared to the conventional light-emitting semiconductor devices.
Inventors
- 👤 Hiroyuki Kasano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 07:28
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; G; G05; G05D; G05D23/00; G05D23/19; G05D23/20; G05D23/22; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F55/00; H10F55/20; H10F55/25; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
59 words
A SEMICONDUCTOR DEVICE COMPRISING: A GERMANIUM SUBSTRATE, A LAYER OF GAAS1-XPX, WHEREIN 1 X 0.3, FORMED ON SAID GERMANIUM SUBSTRATE, A PAIR OF ELECTRODES RESPECTIVELY DISPOSED ON SAID SUBSTRATE AND SAID LAYER, AND MEANS, COUPLED TO SAID ELECTRODES, FOR PROVIDING AN INDICATION OF THE AMOUNT OF LIGHT INCIDENT ON SAID SUBSTRATE, SO AS TO FORM A LIGHT DETECTING CELL.
Claim 2
Dependent Claim
59 words
A SEMICONDUCTOR DEVICE COMPRISING: A GERMANIUM SUBSTRATE, A LAYER OF GAAS1-XPX, WHEREIN 1 X 0.3, FORMED ON SAID GERMANIUM SUBSTRATE, A PAIR OF ELECTRODES RESPECTIVELY DISPOSED ON SAID SUBSTRATE AND SAID LAYER, AND MEANS, COUPLED TO SAID ELECTRODES, FOR PROVIDING AN INDICATION OF THE AMOUNT OF LIGHT INCIDENT ON SAID SUBSTRATE, SO AS TO FORM A LIGHT DETECTING CELL.
Claim 3
Dependent Claim
14 words
A semiconductor device according to claim 1, wherein said substrate has the formula GaAs0.7P0.3.
Claim 4
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein said layer has a germanium concentration between 0.4 and 0.8 parts per million.
Claim 5
Dependent Claim
236 words
A radiation generator-detector device comprising: a light emitting diode which generates radiation in a plurality of discrete Optical bands simultaneously; first means, responsive to the radiation generated by said light emitting diode in one of said bands, for detecting the radiation generated by said light emitting diode in said one of said bands; and second means, responsive to the radiation generated by said light emitting diode in another of said plurality of bands, for providing an indication of the generation of radiation by said light emitting diode in said another one of said bands, wherein said first means comprises a photo diode sensitive to optical energy of a particular wavelength and for providing a current flow therefrom as a result of the impingement of optical energy of said particular wavelength thereon, and said light emitting diode comprises a semiconductor light emitter generating optical energy of said particular wavelength to which said photo diode is sensitive and optical energy of a wavelength to which said photo diode is substantially insensitive, but to which said second means is sensitive so as to provide an indication of the impingement thereon, and wherein said photo diode comprises a crystal of GaAs1 xPx wherein 1 > or = x > or = 0.3 including germanium having a concentration of N of 0.1 ppm < or = N < 1 ppm and a pn junction formed therein sensitive to said particular wavelength.
Claim 6
Dependent Claim
236 words
A radiation generator-detector device comprising: a light emitting diode which generates radiation in a plurality of discrete Optical bands simultaneously; first means, responsive to the radiation generated by said light emitting diode in one of said bands, for detecting the radiation generated by said light emitting diode in said one of said bands; and second means, responsive to the radiation generated by said light emitting diode in another of said plurality of bands, for providing an indication of the generation of radiation by said light emitting diode in said another one of said bands, wherein said first means comprises a photo diode sensitive to optical energy of a particular wavelength and for providing a current flow therefrom as a result of the impingement of optical energy of said particular wavelength thereon, and said light emitting diode comprises a semiconductor light emitter generating optical energy of said particular wavelength to which said photo diode is sensitive and optical energy of a wavelength to which said photo diode is substantially insensitive, but to which said second means is sensitive so as to provide an indication of the impingement thereon, and wherein said photo diode comprises a crystal of GaAs1 xPx wherein 1 > or = x > or = 0.3 including germanium having a concentration of N of 0.1 ppm < or = N < 1 ppm and a pn junction formed therein sensitive to said particular wavelength.
Claim 7
Dependent Claim
280 words
A radiation generator-detector device comprising: a light emitting diode which generates radiation in a plurality of discrete optical bands simultaneously; first means, responsive to the radiation generated by said light emitting diode in one of said bands, for detecting the radiation generated by said light emitting diode in said one of said bands, and second means, responsive to the radiation generated by said light emitting diode in another of said plurality of bands, for providing an indication of the generation by said light emitting diode in said another one of said bands, wherein said first means comprises a photo diode sensitive to optical energy of a particular wavelength and for providing a current flow therefrom as a result of the impingement of optical energy of said particular wavelength thereon, and said light emitting diode comprises a semiconductor light emitter generating optical energy of said particular wavelength to which said photo diode is sensitive and optical energy of a wavelength to which said photo diode is suubstantially insensitive, but to which said second means is sensitive so as to provide an indication of the impingement thereon, and wherein said semiconductor light emitter comprises a germanium substrate, a crystal of GaAs1 xPx, wherein 1 > or = x > or = 0.3, formed on said substrate and said crystal includes a germanium concentration N of 0.1 ppm < or = N<1 ppm and a Pn junction, and a pair of electrodes connected to said substrate and said crystal so as to induce the generation of light therein at both said particular wavelength and said wavelength to which said photo diode is insensitive, in response to the application of current to said electrodes.
Claim 8
Dependent Claim
280 words
A radiation generator-detector device comprising: a light emitting diode which generates radiation in a plurality of discrete optical bands simultaneously; first means, responsive to the radiation generated by said light emitting diode in one of said bands, for detecting the radiation generated by said light emitting diode in said one of said bands, and second means, responsive to the radiation generated by said light emitting diode in another of said plurality of bands, for providing an indication of the generation by said light emitting diode in said another one of said bands, wherein said first means comprises a photo diode sensitive to optical energy of a particular wavelength and for providing a current flow therefrom as a result of the impingement of optical energy of said particular wavelength thereon, and said light emitting diode comprises a semiconductor light emitter generating optical energy of said particular wavelength to which said photo diode is sensitive and optical energy of a wavelength to which said photo diode is suubstantially insensitive, but to which said second means is sensitive so as to provide an indication of the impingement thereon, and wherein said semiconductor light emitter comprises a germanium substrate, a crystal of GaAs1 xPx, wherein 1 > or = x > or = 0.3, formed on said substrate and said crystal includes a germanium concentration N of 0.1 ppm < or = N<1 ppm and a Pn junction, and a pair of electrodes connected to said substrate and said crystal so as to induce the generation of light therein at both said particular wavelength and said wavelength to which said photo diode is insensitive, in response to the application of current to said electrodes.
Claim 9
Dependent Claim
52 words
A device according to claim 5, wherein said photo diode comprises a crystal of GaAs1 xPx wherein 1 > or = x > or = 0.3 including germanium having a concentration N of 0.1 ppm < or = N < 1ppm and a pn junction formed therein sensitive to said particular wavelength.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-13 | 1979-04-14 | 1979-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-13 | 1983-04-14 | 1983-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-13 | 1987-04-14 | 1987-10-14 | $7700.00 | Window Closed / Lapsed |