US3612958A
Expired / Lapsed
US
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Gallium arsenide semiconductor device
Assignee: NEC Corp
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Filing: 1969-09-12
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Granted: 1971-10-12
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Expires: 1989-09-12
Abstract
Abstract A gallium arsenide semiconductor device comprises a low resistivity substrate having a high impurity concentration. A first high impurity concentration layer is grown on the substrate and a second, low impurity layer is grown on the first grown layer. The introduction of impurities from the substrate into the grown semiconductor layer is significantly decreased.
Inventors
- 👤 Takeshi Saito
- 👤 Hasegawa Fumio
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:31
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10D; H10D99/00; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S148/00; Y10S148/007; Y10S148/056; Y10S438/00; Y10S438/914; Y10S438/916
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
21 words
The device of claim 1, in which the resistivity of said substrate is not greater than 1 X 10 3 ohm-cm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-11 | 1975-04-12 | 1975-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-11 | 1979-04-12 | 1979-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-11 | 1983-04-12 | 1983-10-12 | $7700.00 | Window Closed / Lapsed |