Method for fabricating monolithic light-emitting semiconductor diodes and arrays thereof
Abstract
Abstract The disclosure herein relates to a method for fabricating planar, monolithic light emitting diodes and arrays thereof from an N-type intermetallic semiconducting material. Controlled regions of P-type conductivity are formed in the N-type material to form a PN-junction by means of controlled zinc diffusion through a multilayer diffusion-masking system comprising coherent films of silica and phosphorus-doped silica. Metallized ohmic contacts are formed on the top (front) surface and ohmic contact to the backside of the zinc diffused semiconductor material is made by a contact system comprising an alloyed multilayered structure of coherent films of tin, gold, nickel, and gold. Electrical leads and a lens are attached to the fabricated diodes to provided either discrete diodes or monolithic arrays thereof.
Inventors
- 👤 John George Schmidt
- 👤 Enghua Lim
Bibliographic Details
Claims Analysis
Total Claims: 3References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-24 | 1975-07-26 | 1976-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-24 | 1979-07-26 | 1980-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-24 | 1983-07-26 | 1984-01-25 | $7700.00 | Window Closed / Lapsed |