Method for the production of monocrystal-polycrystal semiconductor devices

Claim 1

A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, COMPRISING THE STEPS OF, A. PROVIDING AN INSULATOR FILM LAYER ON A FIRST CONDUCTIVITY TYPE SILICON SUBSTRATE BY FORMING A LAYER FOR DEVELOPING A POLYCRYSTALLINE SEEDING SITE, B. SELECTIVELY REMOVING AREAS OF SAID INSULATOR FILM AND ALLOWING A CLOSED PATH PATTERN INSULATOR LAYER TO REMAIN ON THE SUBSTRATE AS A POLYCRYSTALLINE SEEDING SITE CIRCUMFERENTIALLY ENCLOSING AN EXPOSED AREA OF THE SURFACE OF THE SUBSTRATE AND AREAS OF THE EXPOSED SURFACE OF THE SUBSTRATE BEING DISPOSED CIRCUMFERENTIALLY OF THE CLOSED PATH PATTERN OF INSULATOR FILM, E. HEATING THE SUBSTRATE WITH SAID CLOSED PATH PATTERN DEFINING A POLYCRYSTALLING SEEDING SITE THEREON IN AN ATMOSPHERE CONTAINING AN EPITAXIAL LAYER-FORMING SUBSTANCE AND AN IMPURITY TO IMPART A SECOND CONDUCTIVITY TYPE OPPOSITE TO SAID FIRST CONDUCTIVITY TYPE TO FORM ON SAID SUBSTRATE A LAYER CONSISTING OF LOW RESISTIVITY MONOCRYSTALLINE PORTIONS AND A HIGH RESISTIVITY POLYCRYSTALLINE PORTION SIMULTANEOUSLY GROWN ON THE EXPOSED SURFACE AREAS OF THE SUBSTRATE AND THE POLYCRYSTALLINE SEEDING SITE RESPECTIVELY SO THAT THE MONOCRYSTALLINE AND POLYCRYSTALLINE PORTIONS INTERFACE AND ISOLATION IS ACHIEVED BETWEEN THE ADJACENT MONOCRYSTALLINE PORTIONS BY SAID POLYCRYSTALLINE PORTION AND THE IMPURITY TO IMPART SAID SECOND CONDUCTIVITY TYPE, AT LEAST THE MONOCRYSTALLINE PORTIONS OF SAID LAYER HAVING A HIGHER IMPURITY CONCENTRATION THAN THAT OF SAID SUBSTRATE, AND D. EFFECTING A DIFFUSION WITH RESPECT TO EACH OF SAID MONOCRYSTALLINE PORTIONS TO FORM CIRCUIT ELEMENTS THEREIN, WHEREBY SAID CIRCUIT ELEMENTS ARE INSULATED FROM EACH OTHER BY BOUNDARIES BETWEEN SAID MONOCRYSTALLINE PORTIONS AND SAID POLYCRYSTALLINE PORTIONS, AND SAID BOUNDARIES BEING SUBSTANTIALLY IN REGISTRY WITH BOUNDARIES BETWEEN THE SAID EXPOSED SURFACE AREAS OF THE SUBSTRATE AND SAID POLYCRYSTALLINE SEEDING SITE.

Claim 2

A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, COMPRISING THE STEPS OF, A. PROVIDING AN INSULATOR FILM LAYER ON A FIRST CONDUCTIVITY TYPE SILICON SUBSTRATE BY FORMING A LAYER FOR DEVELOPING A POLYCRYSTALLINE SEEDING SITE, B. SELECTIVELY REMOVING AREAS OF SAID INSULATOR FILM AND ALLOWING A CLOSED PATH PATTERN INSULATOR LAYER TO REMAIN ON THE SUBSTRATE AS A POLYCRYSTALLINE SEEDING SITE CIRCUMFERENTIALLY ENCLOSING AN EXPOSED AREA OF THE SURFACE OF THE SUBSTRATE AND AREAS OF THE EXPOSED SURFACE OF THE SUBSTRATE BEING DISPOSED CIRCUMFERENTIALLY OF THE CLOSED PATH PATTERN OF INSULATOR FILM, E. HEATING THE SUBSTRATE WITH SAID CLOSED PATH PATTERN DEFINING A POLYCRYSTALLING SEEDING SITE THEREON IN AN ATMOSPHERE CONTAINING AN EPITAXIAL LAYER-FORMING SUBSTANCE AND AN IMPURITY TO IMPART A SECOND CONDUCTIVITY TYPE OPPOSITE TO SAID FIRST CONDUCTIVITY TYPE TO FORM ON SAID SUBSTRATE A LAYER CONSISTING OF LOW RESISTIVITY MONOCRYSTALLINE PORTIONS AND A HIGH RESISTIVITY POLYCRYSTALLINE PORTION SIMULTANEOUSLY GROWN ON THE EXPOSED SURFACE AREAS OF THE SUBSTRATE AND THE POLYCRYSTALLINE SEEDING SITE RESPECTIVELY SO THAT THE MONOCRYSTALLINE AND POLYCRYSTALLINE PORTIONS INTERFACE AND ISOLATION IS ACHIEVED BETWEEN THE ADJACENT MONOCRYSTALLINE PORTIONS BY SAID POLYCRYSTALLINE PORTION AND THE IMPURITY TO IMPART SAID SECOND CONDUCTIVITY TYPE, AT LEAST THE MONOCRYSTALLINE PORTIONS OF SAID LAYER HAVING A HIGHER IMPURITY CONCENTRATION THAN THAT OF SAID SUBSTRATE, AND D. EFFECTING A DIFFUSION WITH RESPECT TO EACH OF SAID MONOCRYSTALLINE PORTIONS TO FORM CIRCUIT ELEMENTS THEREIN, WHEREBY SAID CIRCUIT ELEMENTS ARE INSULATED FROM EACH OTHER BY BOUNDARIES BETWEEN SAID MONOCRYSTALLINE PORTIONS AND SAID POLYCRYSTALLINE PORTIONS, AND SAID BOUNDARIES BEING SUBSTANTIALLY IN REGISTRY WITH BOUNDARIES BETWEEN THE SAID EXPOSED SURFACE AREAS OF THE SUBSTRATE AND SAID POLYCRYSTALLINE SEEDING SITE.