Apparatus for producing epitaxial layers

Claim 1

An apparatus for the production of epitaxial layers on a substrate composed of a compound semiconductor material, comprising: a substrate carrier having at least two adjoining surfaces; a high-heat capacity body in contact with one of said surfaces of the substrate carrier and adjacent the other of said surfaces of the substrate carrier; an area along contacting surfaces of said carrier and body defining a gap for receiving at least one substrate therein; an area along non-contacting surfaces of said carrier and body defining a wedge-shaped slot in communication with said gap; a container for holding a melt containing the material to be epitaxially deposited, said container being positioned on said high-heat capacity body and in communication with said slot; and a selectively movable shaft attached to said substrate carrier so that upon movement of said shaft the melt is guided from said container through said slot to said gap and onto a surface of a substrate within said gap for epitaxial deposition thereon upon super-cooling of said melt.

Claim 2

An apparatus for the production of epitaxial layers on a substrate composed of a compound semiconductor material, comprising: a substrate carrier having at least two adjoining surfaces; a high-heat capacity body in contact with one of said surfaces of the substrate carrier and adjacent the other of said surfaces of the substrate carrier; an area along contacting surfaces of said carrier and body defining a gap for receiving at least one substrate therein; an area along non-contacting surfaces of said carrier and body defining a wedge-shaped slot in communication with said gap; a container for holding a melt containing the material to be epitaxially deposited, said container being positioned on said high-heat capacity body and in communication with said slot; and a selectively movable shaft attached to said substrate carrier so that upon movement of said shaft the melt is guided from said container through said slot to said gap and onto a surface of a substrate within said gap for epitaxial deposition thereon upon super-cooling of said melt.

Claim 8

An apparatus for the production of epitaxial layers on a substrate comprising: a selectively movable substrate carrier member having at least two adjoining walls which define an obtuse angle with one another; a parallelepiped body composed of a high-heat capacity material and having a bottom surface in contact with one of said adjoining walls of the carrier member so as to define a wedge-shaped slot between adjacent non-contacting surfaces of said carrier member and said body; a recess formed along a central area of said bottom surface of the parallelepiped body so as to define a gap between said body and said carrier member for receiving at least one substrate therein; a selectively movable container positioned on said parallelepiped body above said gap and in communication with said slot for maintaining a melt containing the material to be epitaxially deposited therein; and means for selectively moving said substrate carrier toward the direction of a non-contacted wall of said substrate carrier so that upon movement of said carrier in said direction the melt is guided from said container toward said gap.

Claim 9

An apparatus for the production of epitaxial layers on a substrate comprising: a selectively movable substrate carrier member having at least two adjoining walls which define an obtuse angle with one another; a parallelepiped body composed of a high-heat capacity material and having a bottom surface in contact with one of said adjoining walls of the carrier member so as to define a wedge-shaped slot between adjacent non-contacting surfaces of said carrier member and said body; a recess formed along a central area of said bottom surface of the parallelepiped body so as to define a gap between said body and said carrier member for receiving at least one substrate therein; a selectively movable container positioned on said parallelepiped body above said gap and in communication with said slot for maintaining a melt containing the material to be epitaxially deposited therein; and means for selectively moving said substrate carrier toward the direction of a non-contacted wall of said substrate carrier so that upon movement of said carrier in said direction the melt is guided from said container toward said gap.