US3692592A
Expired / Lapsed
US
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Method and apparatus for depositing epitaxial semiconductive layers from the liquid phase
Assignee: RCA Corp
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Filing: 1970-02-12
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Granted: 1972-09-19
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Expires: 1990-02-12
Abstract
Abstract ONE OR MORE EPITAXIAL LAYERS OF A SEMICONDUCTIVE MATERIAL ARE DEPOSITED ON A SUBSTRATE IN A FURNACE BOAT CONTAINING FOR EACH LAYER TO BE DEPOSITED A RESERVOIR WELL ADJACENT TO BUT VERTICALLY ABOVE A GROWING WELL. A CHARGE OF THE INGREDIENTS OF EACH OF THE EPITAXIAL LAYERS IS PLACED IN A SEPARATE ONE OF THE RESERVOIR WELLS AND THE BOAT IS HEATED TO MELT THE CHARGES. THE MELTED CHARGES ARE SUCCESSIVELY POURED FROM THEIR RESPECTIVE RESERVOIR WELLS INTO THEIR ADJACENT GROWING WELLS AND THE SUBSTRATE IS PLACED INTO THE RESPECTIVE GROWING WELLS TO PERMIT AN EPITAXIAL LAYER TO DEPOSIT ON THE SUBSTRATE.
Inventors
- 👤 Donald Paul Marinelli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:15
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/061; C30B19/063; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-19 | 1976-03-20 | 1976-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-19 | 1980-03-20 | 1980-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-19 | 1984-03-20 | 1984-09-19 | $7700.00 | Window Closed / Lapsed |