US3884732A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic storage array and method of making
Assignee: International Business Machines Corp
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Filing: 1973-09-17
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Granted: 1975-05-20
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Expires: 1993-09-17
Abstract
Abstract A monolithic storage matrix having cells formed of multi-emitter transistors in which one emitter of each transistor forms part of the storage circuit and the other emitter of each transistor is coupled to the accessing and retrieval circuits. The transistors portions for storage are formed with bases of a given width and the transistors portions coupled to the accessing and retrieving circuits have a lesser width so that short access times are obtained while the stability of the storage circuit is maintained.
Inventors
- 👤 Utz G Baitinger
- 👤 Knut K Najmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/177; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/411; G11C11/4116; H10B; H10B10/00; H10B10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/038; Y10S148/085; Y10S148/145; Y10S148/151
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
77 words
IN THE PLANAR PROCESS FOR FABRICATING MULTI-EMITTER TRANSISTOR DEVICES IN INTERGRATED FORM IN WHICH A SUBCOLLECTOR IS DIFFUSED INTO A SEMICONDUCTOR SUBSTRATE AND AN EPITAXIAL LAYER IS GROWN ON SAID SUBSTRATE AND DIFFUSED SUBCOLLECTOR, THE IMPROVEMENT COMPRISING THE STEPS OF: DIFFUSING A FIRST BASE ZONE OF PREDETERMINED WIDTH INTO THE EPITAXIAL LAYER OVER THE SUBCOLLECTOR, DIFFUSING A SECOND BASE ZONE INTO THE FIRST ZONE AND INTO THE EPITAXIAL LAYER LATERALLY ADJACENT TO SAID FIRST ZONE SO THAT
Claim 2
Dependent Claim
77 words
IN THE PLANAR PROCESS FOR FABRICATING MULTI-EMITTER TRANSISTOR DEVICES IN INTERGRATED FORM IN WHICH A SUBCOLLECTOR IS DIFFUSED INTO A SEMICONDUCTOR SUBSTRATE AND AN EPITAXIAL LAYER IS GROWN ON SAID SUBSTRATE AND DIFFUSED SUBCOLLECTOR, THE IMPROVEMENT COMPRISING THE STEPS OF: DIFFUSING A FIRST BASE ZONE OF PREDETERMINED WIDTH INTO THE EPITAXIAL LAYER OVER THE SUBCOLLECTOR, DIFFUSING A SECOND BASE ZONE INTO THE FIRST ZONE AND INTO THE EPITAXIAL LAYER LATERALLY ADJACENT TO SAID FIRST ZONE SO THAT
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-19 | 1978-11-18 | 1979-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-19 | 1982-11-18 | 1983-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-19 | 1986-11-18 | 1987-05-20 | $7700.00 | Window Closed / Lapsed |