Monolithic integrated circuit including field effect transistors and bipolar transistors,and method of making

Abstract

Abstract A MONOLITHIC INTEGRATED CIRCUIT A PLURALITY OF FIELD EFFECT TRANSISTORS AND BIPOLAR TRANSISTORS FORMED IN A SINGLE EPITAXIAL LAYER ON THE SAME SEMICONDUCTOR MEMBER AND A METHOD FOR DOING SO WITH DIFFUSION STEPS COMMON TO BOTH TYPES OF TRANSISTORS, ARE DESCRIBED. THE TOP GATE OF A PN JUNCTION GATED FIELD EFFECT TRANSISTOR AND THE EMITTER OF AN NPN BIPOLAR TRANSISTOR ARE FORMED SIMULTANEOUSLY, WHILE THE SOURCE AND DRAIN OF THE FIELD EFFECT TRANSISTOR AND THE BASE OF THE BIPOLAR TRANSISTOR ARE FORMED SIMULTANEOUSLY. THE CHANNEL PORTIN OF THE FIELD EFFECT TRANSISTOR IS FORMED SEPARATELY WITH A DOPING IMPURITY CONCENTRATION OF LOWER SURFACE VALUE AND LOWER SLOPE THAN ANY OF THE OTHER ELEMENTS TO PROVIDE SUCH CHANNEL WITH A HIGH RESISTANCE WHICH IT MORE UNIFORM AND EASIER TO REPRODUCE.

Inventors

• 👤 Heber J Bresee

Bibliographic Details