US3761786A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having resistors constituted by an epitaxial layer
Assignee: Hitachi Ltd
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Filing: 1971-08-30
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Granted: 1973-09-25
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Expires: 1991-08-30
Abstract
Abstract A semiconductor device having resistors is disclosed, which comprises a p-type silicon substrate, first high impurity concentration p-type regions disposed in superficial portions of the substrate, an n-type silicon epitaxial layer disposed on top of the substrate and of the first high impurity concentration ptype regions, p-type out-diffusion regions occupying portions of the epitaxial layer and contiguous to the respective first high impurity concentration regions, and a second high impurity concentration p-type region occupying a superficial portion of the epitaxial layer and reaching the out-diffusion regions to thereby isolate portions of the epitaxial layer contiguous to the respective out-diffusion regions.
Inventors
- 👤 M Suzuki
- 👤 M Ozawa
- 👤 I Imaizumi
- 👤 A Hotta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:39
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/615; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/151; Y10S257/00; Y10S257/918
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
220 words
A semiconductor device comprising: a semiconductor substrate of one conductivity type; a first semiconductor region of the same conductivity type as that of said substrate and of a higher impurity concentration than that of said substrate, disposed in said substrate adjacent one major surface of said substrate; a semiconductor layer of an opposite conductivity type to that of said substrate and of a lower impurity concentration than that of said substrate, disposed on said one major surface of said substrate; a second semiconductor region of the same conductivity type as that of said substrate and of a higher impurity concentration than that of said semiconductor layer, but of a lower impurity concentration than that of said first semiconductor region, disposed in said semiconductor layer adjacent the one portion of said one major surface, where said first semiconductor region is disposed; two active elements disposed in said semiconductor layer so as to interpose a part of said semiconductor layer therebetween, under which said second semiconductor region is disposed, whereby said two active elements are connected with said part of said semiconductor layer; and a third semiconductor region of an opposite conductivity type to that of said semiconductor layer disposed in said semiconductor layer reaching said substrate so as to surround said two active elements and said part of said semiconductor layer.
Claim 2
Dependent Claim
220 words
A semiconductor device comprising: a semiconductor substrate of one conductivity type; a first semiconductor region of the same conductivity type as that of said substrate and of a higher impurity concentration than that of said substrate, disposed in said substrate adjacent one major surface of said substrate; a semiconductor layer of an opposite conductivity type to that of said substrate and of a lower impurity concentration than that of said substrate, disposed on said one major surface of said substrate; a second semiconductor region of the same conductivity type as that of said substrate and of a higher impurity concentration than that of said semiconductor layer, but of a lower impurity concentration than that of said first semiconductor region, disposed in said semiconductor layer adjacent the one portion of said one major surface, where said first semiconductor region is disposed; two active elements disposed in said semiconductor layer so as to interpose a part of said semiconductor layer therebetween, under which said second semiconductor region is disposed, whereby said two active elements are connected with said part of said semiconductor layer; and a third semiconductor region of an opposite conductivity type to that of said semiconductor layer disposed in said semiconductor layer reaching said substrate so as to surround said two active elements and said part of said semiconductor layer.
Claim 3
Dependent Claim
68 words
A semiconductor device according to claim 1, further comprising a fourth semiconductor region of the same conductivity type as that of said substrate and of a higher impurity concentration than that of said substrate disposed in said semiconductor layer, adjacent said second semiconductor region, but being separated from said second semiconductor region by a specified distanCe, so as to interpose a selected portion of said semiconductor layer therebetween.
Claim 4
Dependent Claim
112 words
A semiconductor device according to claim 1, further comprising a pair of respective fourth semiconductor regions of the same conductivity as said semiconductor layer and a higher impurity concentration than that of said semiconductor layer, disposed in said substrate adjacent said one major surface beneath said active elements and having said first semiconductor region disposed therebetween, and a pair of respective fifth semiconductor regions of the same conductivity type as said semiconductor layer and of a higher impurity concentration than that of said semiconductor layer, disposed in said semiconductor layer adjacent said major surface, where said respective fourth semiconductor regions are disposed, so as to have said second semiconductor region disposed therebetween.
Claim 5
Dependent Claim
68 words
A semiconductor device according to claim 3, further comprising a sixth semiconductor region of the same conductivity type as that of said substrate and of a higher impurity concentration than that of said substrate disposed in said semiconductor layer, adjacent said second semiconductor region, but being separated from said second semiconductor region by a specified distance, so as to interpose a selected portion of said semiconductor layer therebetween.
References Cited (Backward Citations)
US3404321A
Cited
US3525025A
Cited
US3564443A
Cited
US3581165A
Cited
US3576682A
Cited
US3595714A
Cited
US3575741A
Cited
US3615932A
Cited
US3569800A
Cited
US3584269A
Cited
US3573573A
Cited
US3643235A
Cited
US3626390A
Cited
US3617827A
Cited
US3702947A
Cited
US3676713A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-24 | 1977-03-26 | 1977-09-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-24 | 1981-03-26 | 1981-09-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-24 | 1985-03-26 | 1985-09-25 | $7700.00 | Window Closed / Lapsed |