← Back to Patent Explorer
US3544445A Expired / Lapsed US ⏱️ 0.0 years remaining

Floating shield in a triode sputtering apparatus protecting the base from the discharge

Assignee: Bendix Corp
•
Filing: 1966-09-01
•
Granted: 1970-12-01
•
Expires: 1986-09-01
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

No abstract record available.

Inventors

  • 👤 Roger M Moseson
  • 👤 John H Smith

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 13:21
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3402; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; C23C14/354; C23C14/355

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 162 words
AN APPARATUS FOR DEPOSITING THIN FILMS BY SPUTTERING MATERIAL FROM AN ION TARGET ONTO A SUBSTRATE, WHICH COMPRISES: AN ENCLOSURE HAVING A BASE; MEANS FOR EVACUATING SAID ENCLOSURE AND FOR ESTABLISHING AN IONIZABLE ATMOSPHERE THEREIN; A BASE PLATE HAVING A CENTRAL APERTURE, SAID BASE PLATE LOCATED ABOVE AND ELECTRICALLY ISOLATED FROM THE BASE OF SAID ENCLOSURE AND DEFINING A SPUTTERING ZONE ABOVE AND ISOLATED FROM THE BASE AND ISOLATED FROM THE BASE OF SAID ENCLOSURE; MEANS FOR ESTABLISHING AN ION PLASMA IN SAID ZONE, SAID MEANS INCLUDING AN ANODE, A CATHODE, AND A TUBULAR CATHODE SHIELD ENCOMPASSING SAID CATHODE, WITH SAID SHIELD EXTENDING THROUGH THE CENTRAL APERTURE AND ELECTRICAL ISOLATED FROM SAID BASE PLATE; MEANS FOR POSITIONING THE ION TARGET INSIDE SAID ZONE; MEANS FOR APPLYING AN ELECTRICAL BIAS TO THE ION TARGET TO ATTRACT IONS TO THE TARGET AND SPUTTER MATERIAL THEREFROM; AND MEANS FOR POSITIONING THE SUBSTRATE INSIDE SAID ZONE FOR THE RECEPTION OF MATERIAL SPUTTERED FROM THE ION TARGET.
Claim 2
Independent Claim 162 words
AN APPARATUS FOR DEPOSITING THIN FILMS BY SPUTTERING MATERIAL FROM AN ION TARGET ONTO A SUBSTRATE, WHICH COMPRISES: AN ENCLOSURE HAVING A BASE; MEANS FOR EVACUATING SAID ENCLOSURE AND FOR ESTABLISHING AN IONIZABLE ATMOSPHERE THEREIN; A BASE PLATE HAVING A CENTRAL APERTURE, SAID BASE PLATE LOCATED ABOVE AND ELECTRICALLY ISOLATED FROM THE BASE OF SAID ENCLOSURE AND DEFINING A SPUTTERING ZONE ABOVE AND ISOLATED FROM THE BASE AND ISOLATED FROM THE BASE OF SAID ENCLOSURE; MEANS FOR ESTABLISHING AN ION PLASMA IN SAID ZONE, SAID MEANS INCLUDING AN ANODE, A CATHODE, AND A TUBULAR CATHODE SHIELD ENCOMPASSING SAID CATHODE, WITH SAID SHIELD EXTENDING THROUGH THE CENTRAL APERTURE AND ELECTRICAL ISOLATED FROM SAID BASE PLATE; MEANS FOR POSITIONING THE ION TARGET INSIDE SAID ZONE; MEANS FOR APPLYING AN ELECTRICAL BIAS TO THE ION TARGET TO ATTRACT IONS TO THE TARGET AND SPUTTER MATERIAL THEREFROM; AND MEANS FOR POSITIONING THE SUBSTRATE INSIDE SAID ZONE FOR THE RECEPTION OF MATERIAL SPUTTERED FROM THE ION TARGET.

References Cited (Backward Citations)

US3133874A Cited
US3294669A Cited
US3391071A Cited
US3341442A Cited
US3296115A Cited
US3305473A Cited
US3410775A Cited
US3361659A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1973-11-30 1974-06-01 1974-12-01 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1977-11-30 1978-06-01 1978-12-01 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1981-11-30 1982-06-01 1982-12-01 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag