US3410775A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrostatic control of electron movement in cathode sputtering
Assignee: AT&T Inc
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Filing: 1966-04-14
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Granted: 1968-11-12
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Expires: 1986-04-14
Abstract
No abstract record available.
Inventors
- 👤 Vratny Frederick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:49
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3471; C23C14/3478
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
99 words
A METHOD FOR THE DEPOSITION OF THIN FILMS UPON A SUBSTRATE BY CATHODIC SPUTTERING IN A VACUUM CHAMBER IN WHICH ARE DISPOSED A FIRST ELECTRODE, AND A SECOND ELECTRODE FOR SUPPORTING AN ELECTRICAL DISCHARGE AND A SPUTTERING SCREEN COAXIALLY SURROUNDING SAID DISCHARGE WHICH COMPRISES THE STEPS OF EVACUATING THE SAID VACCUM CHAMBER, ADMITTING A SPUTTERING GAS INTO THE SAID VACUUM CHAMBER, BIASING THE SAID SECOND ELECTRODE NEGATIVE WITH RESPECT TO SAID FIRST ELECTRODE BY MEANS OF A D-C POTENTIAL TO EFFECT SAID ELECTRICAL DISCHARGE AND BIASING THE SAID SCREEN AT A FIXED POTENTIAL WITH RESPECT TO SAID FIRST ELECTODE.
Claim 2
Independent Claim
99 words
A METHOD FOR THE DEPOSITION OF THIN FILMS UPON A SUBSTRATE BY CATHODIC SPUTTERING IN A VACUUM CHAMBER IN WHICH ARE DISPOSED A FIRST ELECTRODE, AND A SECOND ELECTRODE FOR SUPPORTING AN ELECTRICAL DISCHARGE AND A SPUTTERING SCREEN COAXIALLY SURROUNDING SAID DISCHARGE WHICH COMPRISES THE STEPS OF EVACUATING THE SAID VACCUM CHAMBER, ADMITTING A SPUTTERING GAS INTO THE SAID VACUUM CHAMBER, BIASING THE SAID SECOND ELECTRODE NEGATIVE WITH RESPECT TO SAID FIRST ELECTRODE BY MEANS OF A D-C POTENTIAL TO EFFECT SAID ELECTRICAL DISCHARGE AND BIASING THE SAID SCREEN AT A FIXED POTENTIAL WITH RESPECT TO SAID FIRST ELECTODE.
Claim 3
Independent Claim
126 words
A METHOD FOR THE DEPOSITION OF THE FILMS UPON A SUBSTRATE BY CATHODIC SPUTTERING IN A VACUUM CHAMBER IN WHICH ARE DISPOSED A FIRST ELECTRODE, AND A SECOND ELECTRODE FOR SUPPORTING AN ELECTRICAL DISCHARGE, A THIRD ELECTRODE AND A SPUTTERING SCREEN COAXIALLY SURROUNDING SAID DISCHARGE WHICH COMPRISES THE STEPS OF EVACUATING THE SAID VACUUM CHAMBER ADMITTING A SPUTTERING GAS INTO THE SAID VACUUM CHAMBER, BIASING THE SAID SECOND ELECTRODE AT A FIXED POTENTIAL WITH RESPECT TO SAID FIRST ELECTODE TO EFFECT SAID ELECTRICAL DISCHARGE AND SIMULTANEOUSLY BIASING THE SAID THIRD ELECTRODE NEGATIVE WITH RESPECT TO SAID FIRST AND SECOND ELECTRODES AT A POTENTIAL DISTICT FROM THAT OF THE SAID SECOND ELECTRODE AND BIASING THE SAID SCREEN AT A FIXED POTENTIAL WITH RESPECT TO SAID FIRST ELECTRODE.
Claim 4
Independent Claim
126 words
A METHOD FOR THE DEPOSITION OF THE FILMS UPON A SUBSTRATE BY CATHODIC SPUTTERING IN A VACUUM CHAMBER IN WHICH ARE DISPOSED A FIRST ELECTRODE, AND A SECOND ELECTRODE FOR SUPPORTING AN ELECTRICAL DISCHARGE, A THIRD ELECTRODE AND A SPUTTERING SCREEN COAXIALLY SURROUNDING SAID DISCHARGE WHICH COMPRISES THE STEPS OF EVACUATING THE SAID VACUUM CHAMBER ADMITTING A SPUTTERING GAS INTO THE SAID VACUUM CHAMBER, BIASING THE SAID SECOND ELECTRODE AT A FIXED POTENTIAL WITH RESPECT TO SAID FIRST ELECTODE TO EFFECT SAID ELECTRICAL DISCHARGE AND SIMULTANEOUSLY BIASING THE SAID THIRD ELECTRODE NEGATIVE WITH RESPECT TO SAID FIRST AND SECOND ELECTRODES AT A POTENTIAL DISTICT FROM THAT OF THE SAID SECOND ELECTRODE AND BIASING THE SAID SCREEN AT A FIXED POTENTIAL WITH RESPECT TO SAID FIRST ELECTRODE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-11-12 | 1972-05-13 | 1972-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-11-12 | 1976-05-13 | 1976-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-11-12 | 1980-05-13 | 1980-11-12 | $7700.00 | Window Closed / Lapsed |