Patent US3502517A successfully refreshed from Google Patents.
US3502517A
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Method of indiffusing doping material from a gaseous phase,into a semiconductor crystal
Assignee: Siemens AG
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Filing: 1966-12-05
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Granted: 1970-03-24
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Expires: 1986-12-05
Abstract
No abstract record available.
Inventors
- 👤 Erhard Sussmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:00
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/122
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3089794A
Cited
US3149395A
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US3189973A
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US3309245A
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US3275910A
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US3326729A
Cited
US3341381A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-03-23 | 1973-09-22 | 1974-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-03-23 | 1977-09-22 | 1978-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-03-23 | 1981-09-22 | 1982-03-24 | $7700.00 | Window Closed / Lapsed |