Method for making a semiconductor device

Claim 1

A METHOD OF MAKING A SEMICONDUCTOR ELEMENT FOR USE IN A SEMICONDUCTOR DEVICE TO GIVE SUCH DEVICE HIGH VOLTAGE BREAKDOWN AND LOW REVERSE CURRENT CHARACTERISTICS, COMPRISING GROWING AN INSULATING COATINGON A SURFACE OF THE ELEMENT, OPENING A FIRST AREA IN THE INSULATING COATING, SELECTIVELY DIFFUSING AN IMPURITY THROUGH SAID AREA INTO THE SEMICONDUCTOR BODY BEHEATH A SURFACE THEREOF TO FORM A FIRST REGION AND A JUNCTION IN SAID BODY WHICH EXTENDS FROM WITHIN SAID BODY BACK TOWARD THE SURFACE THEREOF, FORMING A LAYER OF PHOSPHOSILICATE GLASS OVER THE INSULATING COATING AND OVER SAID FIRST AREA ON THE SURFACE OF THE ELEMENT, OPENING A SECOND AREA THROUGH SAID INSULATING COATING AND SAID LAYER OF PHOSPHOSILICATE GLASS, SAID SECOND AREA COMPLETELY SUROUNDING SAID FIRST AREA AND SPACED LATERALLY AWAY FROM AND SEPARATED FROM THE FIRST AREA ON SAID SURFACE, WITH SAID SECOND AREA COMPLETELY SURROUNDING SAID FIRST REGION IN THE BODY OF THE ELEMENT, AND DIFFUSING AN IMPURITY INTO SAID BODY THROUGH SAID SECOND AREA TO FORM A CHANNEL-INTERRUPTING REGION WHICH IS LATERALLY SPACED OUTSIDE SAID FIRST REGION, IS OF OPPOSITE CONDUCTIVITY TYPE TO THAT OF SIAD FIRST REGION AND EXTENDS TO A DEPTH IN SAID BODY WHICH IS DEEPER THAN ANY CHANNEL REGION FORMED IN SID BODY IMMEDIATELY UNDER THE INSULATING COATING SO AS TO PHYSICALLY INTERRUPT SUCH A CHANNEL AND DIRECT THE JUNCTION AT THE INSIDE INTERFACE OF THE INTERRUPTING-CHANNEL REGION TOWARD THE SURFACE OF THE ELEMENT.

Claim 2

A METHOD OF MAKING A SEMICONDUCTOR ELEMENT FOR USE IN A SEMICONDUCTOR DEVICE TO GIVE SUCH DEVICE HIGH VOLTAGE BREAKDOWN AND LOW REVERSE CURRENT CHARACTERISTICS, COMPRISING GROWING AN INSULATING COATINGON A SURFACE OF THE ELEMENT, OPENING A FIRST AREA IN THE INSULATING COATING, SELECTIVELY DIFFUSING AN IMPURITY THROUGH SAID AREA INTO THE SEMICONDUCTOR BODY BEHEATH A SURFACE THEREOF TO FORM A FIRST REGION AND A JUNCTION IN SAID BODY WHICH EXTENDS FROM WITHIN SAID BODY BACK TOWARD THE SURFACE THEREOF, FORMING A LAYER OF PHOSPHOSILICATE GLASS OVER THE INSULATING COATING AND OVER SAID FIRST AREA ON THE SURFACE OF THE ELEMENT, OPENING A SECOND AREA THROUGH SAID INSULATING COATING AND SAID LAYER OF PHOSPHOSILICATE GLASS, SAID SECOND AREA COMPLETELY SUROUNDING SAID FIRST AREA AND SPACED LATERALLY AWAY FROM AND SEPARATED FROM THE FIRST AREA ON SAID SURFACE, WITH SAID SECOND AREA COMPLETELY SURROUNDING SAID FIRST REGION IN THE BODY OF THE ELEMENT, AND DIFFUSING AN IMPURITY INTO SAID BODY THROUGH SAID SECOND AREA TO FORM A CHANNEL-INTERRUPTING REGION WHICH IS LATERALLY SPACED OUTSIDE SAID FIRST REGION, IS OF OPPOSITE CONDUCTIVITY TYPE TO THAT OF SIAD FIRST REGION AND EXTENDS TO A DEPTH IN SAID BODY WHICH IS DEEPER THAN ANY CHANNEL REGION FORMED IN SID BODY IMMEDIATELY UNDER THE INSULATING COATING SO AS TO PHYSICALLY INTERRUPT SUCH A CHANNEL AND DIRECT THE JUNCTION AT THE INSIDE INTERFACE OF THE INTERRUPTING-CHANNEL REGION TOWARD THE SURFACE OF THE ELEMENT.