Planar multi-channel field-effect tetrode

Claim 2

A FIELD-EFFECT TETRODE DEVICE COMPRISING: (A) A BODY OF SEMI-CONDUCTOR MATERIAL OF A FIRST TYPE OF CONDUCTIVITY; (B) A PAIR OF GRID CONTROL ELECTRODE MEMBERS OF SEMICONDUCTOR MATERIAL AND OF OPPOSITE CONDUCTIVITY TYPE WITH RESPECT TO SAID FIRST TYPE DISPOSED WITHIN AND SURROUNDED BY SAID BODY OF SEMI-CONDUCTOR MATERIAL IN SIDE-BY-SIDE FASHION EACH OF SAID GRID CONTROL ELECTRODE MEMBERS HAVING A PLURALITY OF CURRENT CONDUCTING CHANNELS EXTENDING THERETHROUGH; (C) A PAIR OF ELECTRICALLY CONDUCTIVE ELECTRODE MEMBERS DISPOSED ON A COMMON SURFACE OF SAID BODY OF SEMI-CONDUCTOR MATERIAL EACH OVERLYING A RESPECTIVE ONE OF SAID GRID ELECTRODE MEMBERS; (D) A REGION OF SAID BODY OF SEMI-CONDUCTOR MATERIAL OF A CONDUCTIVITY TYPE OPPOSITE TO SAID FIRST TYPE DISPOSED ON SAID COMMON SURFACE OF SAID BODY AND EXTENDING DOWN THEREINTO SO AS TO SURROUND EACH OF SAID GRID CONTROL ELECTRODE MEMBERS; (E) AND MEANS IN SAID SEMI-CONDUCTOR BODY MAKING SEPARATE ELECTRICAL CONNECTIONS TO SAID GRID CONTROL ELECTRODE MEMBERS.

Claim 3

A FIELD-EFFECT TETRODE DEVICE COMPRISING: (A) A BODY OF SEMI-CONDUCTOR MATERIAL HAVING A FIRST TYPE OF CONDUCTIVITY AND OF PREDETERMINED RESISTIVITY; (B) A FIRST LAYER OF SEMI-CONDUCTOR MATERIAL DISPOSED ON A FIRST SURFACE OF AND INTEGRAL WITH SAID BODY OF SEMI-CONDUCTOR MATERIAL, SAID FIRST LAYER BEING OF SAID FIRST TYPE OF CONDUCTIVITY AND OF LOWER RESISTIVITY THAN SAID PREDETERMINED RESISTIVITY; (C) A SECOND LAYER OF SEMI-CONDUCTOR MATERIAL DISPOSED ON ANOTHER PORTION OF SAID FIRST SURFACE OF AND INTEGRAL WITH SAID BODY OF SEMI-CONDUCTOR MATERIAL, SAID SECOND LAYER BEING OF SAID FIRST TYPE OF CONDUCTIVITY AND OF LOWER RESISTIVITY THAN SAID PREDETERMINED RESISTIVITY; (D) A FIRST INTERNAL REGION OF SAID SEMI-CONDUCTOR BODY UNDERLYING SAID FIRST LAYER AND BEING IN THE FORM OF A GRID OF SEMI-CONDUCTOR MATERIAL OF A SECOND TYPE OF CONDUCTIVITY OPPOSITE TO SAID FIRST TYPE; (E) A SECOND INTERNAL REGION OF SAID SEMI-CONDUCTOR BODY UNDERLYING SAID SECOND LAYER AND BEING IN THE FORM OF A GRID OF SEMI-CONDUCTOR MATERIAL OF SAID SECOND TYPE OF CONDUCTIVITY; (F) AND A REGION OF SAID SEMI-CONDUCTOR BODY DISPOSED ON SAID FIRST SURFACE THEREOF HAVING SAID SECOND TYPE OF CONDUCTIVITY AND EXTENDING DOWN INTO SAID SEMICONDUCTOR BODY SO AS TO SURROUND SAID FIRST AND SECOND INTERNAL REGIONS THEREOF.

Claim 4

A FIELD-EFFECT TETRODE DEVICE COMPRISING: (A) A BODY OF SEMI-CONDUCTOR MATERIAL HAVING A FIRST TYPE OF CONDUCTIVITY AND OF PREDETERMINED RESISTIVITY; (B) A FIRST LAYER OF SEMI-CONDUCTOR MATERIAL DISPOSED ON A FIRST SURFACE OF AND INTEGRAL WITH SAID BODY OF SEMI-CONDUCTOR MATERIAL, SAID FIRST LAYER BEING OF SAID FIRST TYPE OF CONDUCTIVITY AND OF LOWER RESISTIVITY THAN SAID PREDETERMINED RESISTIVITY; (C) A SECOND LAYER OF SEMI-CONDUCTOR MATERIAL DISPOSED ON ANOTHER PORTION OF SAID FIRST SURFACE OF AND INTEGRAL WITH SAID BODY OF SEMI-CONDUCTOR MATERIAL, SAID SECOND LAYER BEING OF SAID FIRST TYPE OF CONDUCTIVITY AND OF LOWER RESISTIVITY THAN SAID PREDETERMINED RESISTIVITY; (D) A FIRST INTERNAL REGION OF SAID SEMI-CONDUCTOR BODY UNDERLYING SAID FIRST LAYER AND BEING IN THE FORM OF A GRID OF SEMI-CONDUCTOR MATERIAL OF A SECOND TYPE OF CONDUCTIVITY OPPOSITE TO SAID FIRST TYPE; (E) A SECOND INTERNAL REGION OF SAID SEMI-CONDUCTOR BODY UNDERLYING SAID SECOND LAYER AND BEING IN THE FORM OF A GRID OF SEMI-CONDUCTOR MATERIAL OF SAID SECOND TYPE OF CONDUCTIVITY; (F) AND A REGION OF SAID SEMI-CONDUCTOR BODY DISPOSED ON SAID FIRST SURFACE THEREOF HAVING SAID SECOND TYPE OF CONDUCTIVITY AND EXTENDING DOWN INTO SAID SEMICONDUCTOR BODY SO AS TO SURROUND SAID FIRST AND SECOND INTERNAL REGIONS THEREOF.