Unipolar transistor

Claim 1

A UNIPOLAR TRANSISTOR COMPRISING: A FIRST REGION OF SEMICONDUCTIVE MATERIAL OF A FIRST TYPE OF CONDUCTIVITY, SAID FIRST REGION COMPRISING A FIRST PORTION HAVING A RESISTIVITY OF FROM ABOUT 1 OHM CENTIMETER TO ABOUT 200 OHM CENTIMETERS; A SECOND REGION OF SEMICONDUCTIVE MATERIAL OF A SECOND TYPE OF CONDUCTIVITY IN SAID FIRST PORTION, SAID SECOND REGION HAVING CONFIGURATION OF A PLURALITY OF INTERCONNECTED STRIPS HAVING A WIDTH OF ABOUT 0.5 MIL TO ABOUT 1 MIL AND HAVING A SPACING BETWEEN STRIPS OF ABOUT 0.5 MIL TO ABOUT 1 MIL, SAID SECOND REGION HAVING A SURFACE IMPURITY DOPING CONCENTRATION OF FROM ABOUT 1018 ATOMS PER CUBIC CENTIMETER TO ABOUT1021 ATOMS PER CUBIC CENTIMETER AND A THICKNESS OF FROM ABOUT 0.2 MIL TO ABOUT 1 MIL; SAID FIRST REGION ALSO COMPRISING A SECOND PORTION OF SEMICONDUCTIVE MATERIAL OF SAID FIRST TYPE OF CONDUCTIVITY EXTENDING OVER SAID SECOND REGION EXCEPT FOR A PORTION EXPOSED AT A PERIPHERY THEREOF, SAID SECOND PORTION HAVING A RESISTIVITY OF FROM ABOUT 1 OHMCENTIMETER TO ABOUT 200 OHM-CENTIMETERS AND A THICKNESS OF FROM ABOUT 0.2 MIL TO ABOUT 1 MIL. FIRST AND SECOND OHMIC CONTACT MEANS DISPOSED ON SAID FIRST AND SECOND PORTIONS AND PROVIDING SOURCE AND DRAIN CONTACTS; THIRD OHMIC CONTACT MEANS DISPOSED ON SAID EXPOSED PORTION OF SAID SECOND REGION AND PROVIDING A GATE CONTACT FOR THE APPLICATION OF A POTENTIAL THERETO TO CONTROL CURRENT FLOW BETWEEN SAID SOURCE AND DRAIN CONTACTS; AND HEAT DISSIPATION MEANS SECURES TO AT LEAST ONE OF SAID FIRST AND SECOND OHMIC CONTACTS.