Integrated circuits comprising field-effect devices

Claim 1

AN INTEGRATED CIRCUIT COMPRISING A PARALLELEPIPED SEMI-CONDUCTOR WAFER HAVING TWO RECTANGULAR FACES, A PTYPE H-SHAPED REGION IN SAID WAFER, SAID P-TYPE REGION INCLUDING TWO RECTILINEAR LONGTIUDINAL REGIONS ALONG THE SIDES OF THE WAFER AND A THIRD RECTILINEAR REGION TRANSVERSE THERETO, TWO FIRST N-TYPE REGIONS ON BOTH SIDES OF SAID PTYPE TRANSVERSE REGION, TWO SECOND N-TYPE REGIONS IN THE EDGES OF THE WAFER PARALLEL TO SAID P-TYPE LONGITUDINAL REGIONS, IN EACH OF SAID FIRST N-TYPE REGIONS, AN ACTIVE FIELDEFFECT ELEMENT INCLUDING A PLURALITY OF INTERNAL ROD-SHAPED N-TYPE REGIONS SUBSTANTIALLY PERPENDICULAR TO THE FACES OF THE WAFER, EMBEDDED IN AN INTERNAL P-TYPE LAYER AND INTEGRAL WITH N-TYPE SUPERFICIAL LAYERS ON THE FACES OF THE WAFER, SAID ACTIVE ELEMENTS BEING STRUCTURALLY SYMMETRICAL WITH RESPECT TO THE MEDIAN PLANE OF THE WAFER, SOURCE AND GATE ELECTRODES FOR EACH ACTIVE FIELD-EFFECT ELEMENT RESPECTIVELY CONNECTED TO ONE SUPERFICIAL AND TO THE INTERNAL LAYYERS, A DRAIN ELECTRODE FOR EACH ACTIVE ELEMENT CONNECTED TO THE OTHER SUPERFICIAL LAYEER, THE DRAIN ELECTRODE OF ONE ACTIVE ELEMENT BEING ON THE SAME FACE AS THE SOURCE AND GATE ELECTRODES OF THE OTHER ACTIVE ELEMENT AND ADJACENT TO SAID GATE ELECTRODE OF SAID OTHER ELEMENT, AT LEAST A COUPLING ELEMENT INTEGRATED IN SAID WAFER CONNECTED BETWEEN THE DRAIN ELECTRODE OF ONE ACTIVE ELEMENT AND THE GATE ELECTRODE OF THE OTHER, A SUPPLY BAR AND A GROUND BAR RESPECTIVELY METALLIZED ONTO SAID TWO SECOND N-TYPE REGIONS, AND INTEGRATED RESISTORS CONNECTED BETWEEN SAID DRAIN ELECTRODES AND SAID SUPPLY BAR AND BETWEEN SAID SOURCE AND GATE ELECTRODES AND SAID GROUND BAR.