Patent US20050151184A1 successfully refreshed from Google Patents.
US20050151184A1
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Dielectric layer for semiconductor device and method of manufacturing the same
Assignee: Samsung Electronics Co Ltd
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Filing: 2004-12-30
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Granted: —
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Expires: 2024-12-30
Abstract
Abstract A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
Inventors
- 👤 Jong-ho Lee
- 👤 Nae-in Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10P14/69391; H10P14/69392; H10P14/69396; H10D1/68; H10D1/682; H10D1/684
Claims Analysis
Total Claims: 66
Claim 1
Independent Claim
32 words
1 . A multi-layer structure for a semiconductor device, comprising: a silicate interface layer; and a high-k dielectric layer overlying the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides.
Claim 2
Dependent Claim
32 words
1 . A multi-layer structure for a semiconductor device, comprising: a silicate interface layer; and a high-k dielectric layer overlying the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides.
Claim 3
Dependent Claim
21 words
2 . The multi-layer structure of claim 1 , wherein the metal alloy oxides include at least two interdiffused metal elements.
Claim 4
Dependent Claim
23 words
3 . The multi-layer structure of claim 1 , wherein said at least two metal elements are homogeneously mixed at an atomic level.
Claim 5
Dependent Claim
24 words
4 . The multi-layer structure of claim 1 , wherein the metal alloy oxides comprise a mixture of at least two different metal oxides.
Claim 6
Dependent Claim
27 words
5 . The multi-layer structure of claim 4 , wherein the metal oxides are chosen to have a minimum net fixed charge of the high-k dielectric layer.
Claim 7
Dependent Claim
35 words
6 . The multi-layer structure of claim 4 , wherein the metal oxides comprise hafnium oxide, zirconium oxide, tantalum oxide, aluminum oxide, titanium oxide, yttrium oxide, strontium oxide, scandium oxide, lanthanum oxide, or barium oxide.
Claim 8
Dependent Claim
33 words
7 . The multi-layer structure of claim 1 , wherein the metal alloy oxide comprises hafnium-aluminum alloy oxide, zirconium-aluminum alloy oxide, tantalum-aluminum alloy oxide, titanium-aluminum alloy oxide, yttrium-aluminum alloy oxide, or hafnium-zirconium-aluminum oxide.
Claim 9
Dependent Claim
26 words
8 . The multi-layer structure of claim 1 , wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 10
Dependent Claim
30 words
9 . The multi-layer structure of claim 1 , wherein the silicate interface layer has a dielectric constant greater than any one of silicon nitride, silicon oxide or silicon oxynitride.
Claim 11
Dependent Claim
21 words
10 . The multi-layer structure of claim 1 , wherein the silicate interface layer has a thickness of approximately 5-50 angstroms.
Claim 12
Dependent Claim
21 words
11 . The multi-layer structure of claim 10 , wherein the silicate interface layer has a thickness of approximately 5-10 angstroms.
Claim 13
Dependent Claim
33 words
12 . The multi-layer structure of claim 1 , wherein the silicate interface layer is formed of a metal silicate material represented by a formula of M 1-x Si x O 2 .
Claim 14
Dependent Claim
37 words
13 . The multi-layer structure of claim 12 , wherein the metal “M” is selected from the group consisting of hafnium (Hf), zirconium (Zr), tantalum (Ta), titanium (Ti), Scandium (Sc), Yttrium (Y), lanthanum (La), and aluminum (Al).
Claim 15
Dependent Claim
19 words
14 . The multi-layer structure of claim 12 , wherein 1-x is greater than or equal to approximately 0.1
Claim 16
Dependent Claim
17 words
15 . The multi-layer structure of claim 12 , wherein 1-x is not greater than approximately 0.5.
Claim 17
Dependent Claim
17 words
16 . The multi-layer structure of claim 12 , wherein 1-x is approximately 0.2 to approximately 0.4.
Claim 18
Dependent Claim
30 words
17 . The multi-layer structure of claim 13 , wherein the metal alloy oxide is represented by a formula of A y B 1-y O z and wherein 0 <y<1.
Claim 19
Dependent Claim
22 words
18 . The multi-layer structure of claim 17 , wherein A is the same or from the same periodic group as M.
Claim 20
Dependent Claim
25 words
19 . The multi-layer structure of claim 17 , wherein A and M are a group IV metal and B is a group XIII metal.
Claim 21
Dependent Claim
19 words
20 . The multi-layer structure of claim 17 , wherein A is zirconium or hafnium; and B is aluminum.
Claim 22
Dependent Claim
17 words
21 . The multi-layer structure of claim 17 , wherein y is approximately 0.5 to approximately 0.9.
Claim 23
Dependent Claim
24 words
22 . The multi-layer structure of claim 17 , wherein a composition ratio of A to B is between approximately 1:1 and approximately 5:1.
Claim 24
Dependent Claim
20 words
23 . The multi-layer structure of claim 22 , wherein the composition ratio of A to B is approximately 2:1.
Claim 25
Dependent Claim
19 words
24 . The multi-layer structure of claim 23 , wherein A is hafnium or zirconium; and B is aluminum.
Claim 26
Dependent Claim
23 words
25 . The multi-layer structure of claim 24 , wherein the silicate interface layer includes aluminum atoms diffused from the high-k dielectric layer.
Claim 27
Dependent Claim
59 words
26 . The multi-layer structure of claim 17 , wherein the value of y is decreased from an interface between the silicate interface layer and a bottom surface of the high-k dielectric layer towards an upper surface of the high-k dielectric layer, and wherein the concentration of A has a gradient along the thickness of the high-k dielectric layer.
Claim 28
Dependent Claim
27 words
27 . The multi-layer structure of claim 17 , wherein the concentration of B is inversely proportional to the concentration of A within the high-k dielectric layer.
Claim 29
Dependent Claim
23 words
28 . The multi-layer structure of claim 17 , wherein the high-k dielectric layer includes silicon atoms diffused from the silicate interface layer.
Claim 30
Dependent Claim
20 words
29 . The multi-layer structure of claim 1 , wherein the high-k dielectric layer has a substantially amorphous crystalline structure.
Claim 31
Dependent Claim
23 words
30 . The multi-layer structure of claim 1 , wherein the high-k dielectric layer is formed to a thickness of approximately 2-60 angstroms.
Claim 32
Dependent Claim
38 words
31 . A method of forming a multi-layer structure for a semiconductor device, comprising: forming a silicate interface layer; and forming a high-k dielectric layer overlying the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides.
Claim 33
Dependent Claim
38 words
31 . A method of forming a multi-layer structure for a semiconductor device, comprising: forming a silicate interface layer; and forming a high-k dielectric layer overlying the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides.
Claim 34
Dependent Claim
61 words
32 . The method of claim 31 , wherein said forming the high-k dielectric layer comprises: forming a first layer having a first metal element by ALD; forming a second layer overlying the first layer having a second metal element by ALD; and annealing the resulting structure at a temperature that allows the first and second metal elements to be interdiffused.
Claim 35
Dependent Claim
18 words
33 . The method of claim 32 , wherein said annealing temperature is greater than approximately 900° C.
Claim 36
Dependent Claim
34 words
34 . The method of claim 32 , wherein the first layer has a first predefined charge and the second layer has a second predefined charge that is opposite that of the first layer.
Claim 37
Dependent Claim
28 words
35 . The method of claim 34 , wherein the first predefined charge is a positive fixed charge and the second predefined charge is a negative fixed charge.
Claim 38
Dependent Claim
23 words
36 . The method of claim 32 , before said annealing, which further comprises forming one or more additional first and second layers.
Claim 39
Dependent Claim
15 words
37 . The method of claim 36 , wherein the uppermost layer comprises aluminum oxide.
Claim 40
Dependent Claim
22 words
38 . The method of claim 32 , wherein the second layer is approximately one half the thickness of the first layer.
Claim 41
Dependent Claim
34 words
39 . The method of claim 38 , wherein the first layer is formed to a thickness of approximately 10 angstroms and the second layer is formed to a thickness of approximately 5 angstroms.
Claim 42
Dependent Claim
45 words
40 . The method of claim 32 , wherein the first layer is formed of hafnium oxide, zirconium oxide, tantalum oxide, aluminum oxide, titanium oxide, yttrium oxide, strontium oxide, scandium oxide, lanthanum oxide, or barium oxide; and the second layer is formed of aluminum oxide.
Claim 43
Dependent Claim
27 words
41 . The method of claim 31 , wherein the silicate interface layer is formed of a metal silicate material (M 1-x Si x O 2 ).
Claim 44
Dependent Claim
43 words
42 . The method of claim 41 , wherein said 1-x is approximately 0.1-0.5, and wherein the metal “M” is selected from the group consisting of hafnium (Hf), zirconium (Zr), tantalum (Ta), titanium (Ti), Scandium (Sc), Yttrium (Y), lanthanum (La), and aluminum (Al).
Claim 45
Dependent Claim
16 words
43 . The method of claim 42 , wherein said 1-x is approximately 0.2 to 0.4.
Claim 46
Dependent Claim
29 words
44 . The method of claim 31 , wherein said forming the silicate interface layer is performed by an ALD technique, a MOCVD technique or a reactive sputtering technique.
Claim 47
Dependent Claim
57 words
45 . The method of claim 31 , wherein the high-k dielectric layer has at least two metal elements that are interdiffused, wherein said forming the high-k dielectric layer is formed by a MOCVD technique or a reactive sputtering technique, and wherein sources for the two metal elements are simultaneously supplied to form the high-k dielectric layer.
Claim 48
Dependent Claim
23 words
46 . The method of claim 31 , wherein the metal alloy oxides include at least two different metal elements that are interdiffused.
Claim 49
Dependent Claim
24 words
47 . The method of claim 46 , wherein the at least two different interdiffused metal elements are homogeneously mixed at an atomic level.
Claim 50
Dependent Claim
25 words
48 . The method of claim 31 , wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 51
Dependent Claim
24 words
49 . The method of claim 31 , wherein a thickness of the high-k dielectric layer is in a range of approximately 2-60 angstroms.
Claim 52
Dependent Claim
13 words
50 . A semiconductor device formed by the process of claim 32 .
Claim 53
Dependent Claim
13 words
51 . A semiconductor device formed by the process of claim 45 .
Claim 54
Dependent Claim
47 words
52 . A semiconductor device comprising: a substrate; a silicate interface layer formed over the substrate; and a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides; a gate electrode; and a source/drain region formed adjacent the gate electrode.
Claim 55
Dependent Claim
47 words
52 . A semiconductor device comprising: a substrate; a silicate interface layer formed over the substrate; and a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides; a gate electrode; and a source/drain region formed adjacent the gate electrode.
Claim 56
Dependent Claim
25 words
53 . The method of claim 52 , wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 57
Dependent Claim
20 words
54 . The semiconductor device of claim 53 , wherein the gate electrode is formed of a metal or polysilicon.
Claim 58
Dependent Claim
54 words
55 . A non-volatile memory, comprising: a substrate; a gate insulation layer; a floating gate overlying the substrate; a silicate interface layer formed over the floating gate; a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides; and a control gate overlying the high-k dielectric layer.
Claim 59
Dependent Claim
54 words
55 . A non-volatile memory, comprising: a substrate; a gate insulation layer; a floating gate overlying the substrate; a silicate interface layer formed over the floating gate; a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides; and a control gate overlying the high-k dielectric layer.
Claim 60
Dependent Claim
26 words
56 . The non-volatile memory of claim 55 , wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
Claim 61
Dependent Claim
41 words
57 . The non-volatile memory of claim 55 , wherein the gate insulation layer comprises an additional silicate interface layer and an additional high-k dielectric layer formed over the additional silicate interface layer, the high-k dielectric layer comprising metal alloy oxides.
Claim 62
Dependent Claim
53 words
58 . A non-volatile memory, comprising: a substrate; a silicate interface layer formed over the substrate; a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides a floating gate overlying the substrate; an intergate dielectric layer; and a control gate overlying the intergate dielectric layer.
Claim 63
Dependent Claim
53 words
58 . A non-volatile memory, comprising: a substrate; a silicate interface layer formed over the substrate; a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides a floating gate overlying the substrate; an intergate dielectric layer; and a control gate overlying the intergate dielectric layer.
Claim 64
Dependent Claim
43 words
59 . A capacitor for a semiconductor device, comprising; a lower electrode; a silicate interface layer formed over the lower electrode; a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides; and an upper electrode.
Claim 65
Dependent Claim
43 words
59 . A capacitor for a semiconductor device, comprising; a lower electrode; a silicate interface layer formed over the lower electrode; a high-k dielectric layer formed over the silicate interface layer, the high-k dielectric layer comprising metal alloy oxides; and an upper electrode.
Claim 66
Dependent Claim
25 words
60 . The capacitor of claim 59 , wherein the high-k dielectric layer has a dielectric constant greater than that of the silicate interface layer.
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