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JP2002124568A Expired / Lapsed JP ⏱️ 0.0 years remaining

Etching method for dual damascene structure

Assignee: Tokyo Electron Ltd
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Filing: 2000-10-18
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Granted: —
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Expires: 2020-10-18
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Abstract

Abstract Translated from Japanese (57)【要約】 【課題】 ハードマスクの肩落ちを抑制可能なデュアル ダマシン構造のエッチング方法を提供すること。 【解決手段】 少なくとも1層以上のLowK膜と少な くとも1層以上のハードマスクを用いるデュアルダマシ ン構造のエッチング方法であって,肩落ちを防止するた めに前記ハードマスクの上に,最終的には構造中に残ら ないダミー膜を少なくとも1層以上形成することを特徴 とする,デュアルダマシン構造のエッチング方法を提供 する。 (57) [Problem] To provide an etching method of a dual damascene structure capable of suppressing shoulder drop of a hard mask. SOLUTION: This is an etching method of a dual damascene structure using at least one or more layers of a LowK film and at least one or more layers of a hard mask. Provided is an etching method of a dual damascene structure, characterized in that at least one or more dummy films that do not remain therein are formed.

Inventors

  • 👤 Yoshihide Kihara
  • 👤 嘉英 木原
  • 👤 Hiroshi Okamoto
  • 👤 普 岡本
  • 👤 Koichiro Inasawa
  • 👤 剛一郎 稲沢
  • 👤 Tomoki Suemasa
  • 👤 智希 末正

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-08 08:34
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/087; H10W20/088

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPH1065003A Cited
JPH10294367A Cited
JP2000294644A Cited
JP2000150519A Cited
JP2002026122A Cited

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