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Patent US7838967B2 successfully refreshed from Google Patents.
US7838967B2
Active / In Force
US
⏱️ 1.5 years remaining
Semiconductor chip having TSV (through silicon via) and stacked assembly including the chips
Assignee: Powertech Technology Inc
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Filing: 2008-04-24
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Granted: 2010-11-23
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Expires: 2028-04-24
Abstract
Abstract A semiconductor chip having through silicon vias (TSV) and a stacked assembly including the chip are revealed. The chip has a plurality of first and second bonding pads disposed on two opposing surfaces of a semiconductor substrate respectively. Through hole vertically penetrate through the semiconductor substrate and the first and second bonding pads. By forming first extruded ring, the first bonding pad has a first contact surface located between the first extruded ring and the through hole. By forming second extruded ring, the second bonding pad has a second contact surface located outside and adjacent to the second extruded rings to encircle the second extruded ring. The second extruded ring has a proper dimension to fit in the first extruded ring. Accordingly, a plurality of semiconductor chip can be stacked each other with accurate alignment without shifting to effectively reduce the stacked assembly height, moreover, chip stacking processes are accomplished by vertically stacking a plurality of chips first then filling conductive material into the through holes without electrical short between the adjacent bonding pads due to overflow of conductive material to meet the fine-pitch requirements of TSV. The process flow for the stacked assembly is simplified with higher production yields.
Inventors
- 👤 Ming-Yao Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/20; H10W20/01; H10W20/021; H10W20/023; H10W20/0238; H10W20/211; H10W20/212; H10W20/2125; H10W72/00; H10W72/90; H10W90/00; H10W72/01; H10W72/941; H10W72/944; H10W80/00; H10W80/161; H10W80/168; H10W90/20; H10W90/24; H10W90/26; H10W90/701; H10W90/721; H10W90/722; H10W90/724; H10W90/791; H10W90/792; H10W90/794; H10W90/796; H10W99/00
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
194 words
A semiconductor chip primarily comprising: a semiconductor substrate having a first surface, a corresponding second surface, a plurality of through holes penetrating from the first surface to the second surface; a plurality of first bonding pads disposed on the first surface; a plurality of second bonding pads disposed on the second surface and aligned with the first bonding pads, wherein the through holes further penetrate through the first bonding pads and the second bonding pads; a plurality of first extruded rings extrusively disposed on the first bonding pads in a manner that each first bonding pad has a first contact surface exposed on the first surface and the first contact surfaces are located between the corresponding first extruded rings and the corresponding through holes; and a plurality of second extruded rings extrusively disposed on the second bonding pads in a manner that each second bonding pad has a second contact surface exposed on the second surface and the second contact surfaces are located outside and adjacent to the corresponding second extruded rings to encircle the corresponding second extruded rings; wherein the second extruded rings have a dimension to fit into the first extruded rings.
Claim 2
Dependent Claim
194 words
A semiconductor chip primarily comprising: a semiconductor substrate having a first surface, a corresponding second surface, a plurality of through holes penetrating from the first surface to the second surface; a plurality of first bonding pads disposed on the first surface; a plurality of second bonding pads disposed on the second surface and aligned with the first bonding pads, wherein the through holes further penetrate through the first bonding pads and the second bonding pads; a plurality of first extruded rings extrusively disposed on the first bonding pads in a manner that each first bonding pad has a first contact surface exposed on the first surface and the first contact surfaces are located between the corresponding first extruded rings and the corresponding through holes; and a plurality of second extruded rings extrusively disposed on the second bonding pads in a manner that each second bonding pad has a second contact surface exposed on the second surface and the second contact surfaces are located outside and adjacent to the corresponding second extruded rings to encircle the corresponding second extruded rings; wherein the second extruded rings have a dimension to fit into the first extruded rings.
Claim 3
Dependent Claim
32 words
The semiconductor chip as claimed in claim 1 , further comprising a metal layer formed inside the through holes to electrically connect the first bonding pads to the corresponding second bonding pads.
Claim 4
Dependent Claim
28 words
The semiconductor chip as claimed in claim 2 , wherein the metal layer, the first extruded rings and the second extruded rings are made of the same material.
Claim 5
Dependent Claim
21 words
The semiconductor chip as claimed in claim 1 , wherein the second surface of the semiconductor substrate is an active surface.
Claim 6
Dependent Claim
39 words
The semiconductor chip as claimed in claim 4 , further comprising an insulation layer formed on the first surface of the semiconductor substrate, wherein the first extruded ring is further extruded from and in contact with the insulation layer.
Claim 7
Dependent Claim
17 words
The semiconductor chip as claimed in claim 5 , wherein the insulation layer is a solder mask.
Claim 8
Dependent Claim
20 words
The semiconductor chip as claimed in claim 1 , further comprising a filling material completely filling into the through holes.
Claim 9
Dependent Claim
210 words
A stacked assembly comprising a plurality of semiconductor chips vertically stacked on each other and a carrier, each semiconductor chip comprising: a semiconductor substrate having a first surface, a corresponding second surface, a plurality of through holes penetrating from the first surface to the second surface; a plurality of first bonding pads disposed on the first surface; a plurality of second bonding pads disposed on the second surface and aligned with the first bonding pads, wherein the through holes further penetrate through the first bonding pads and the second bonding pads; a plurality of first extruded rings extrusively disposed on the first bonding pads in a manner that each first bonding pad has a first contact surface exposed on the first surface and the first contact surfaces are located between the corresponding first extruded rings and the corresponding through holes; and a plurality of second extruded rings extrusively disposed on the second bonding pads in a manner that each second bonding pad has a second contact surface exposed on the second surface and the second contact surfaces are located outside and adjacent to the corresponding second extruded rings to encircle the corresponding second extruded rings; wherein the second extruded rings have a dimension for inserting into the first extruded rings.
Claim 10
Dependent Claim
210 words
A stacked assembly comprising a plurality of semiconductor chips vertically stacked on each other and a carrier, each semiconductor chip comprising: a semiconductor substrate having a first surface, a corresponding second surface, a plurality of through holes penetrating from the first surface to the second surface; a plurality of first bonding pads disposed on the first surface; a plurality of second bonding pads disposed on the second surface and aligned with the first bonding pads, wherein the through holes further penetrate through the first bonding pads and the second bonding pads; a plurality of first extruded rings extrusively disposed on the first bonding pads in a manner that each first bonding pad has a first contact surface exposed on the first surface and the first contact surfaces are located between the corresponding first extruded rings and the corresponding through holes; and a plurality of second extruded rings extrusively disposed on the second bonding pads in a manner that each second bonding pad has a second contact surface exposed on the second surface and the second contact surfaces are located outside and adjacent to the corresponding second extruded rings to encircle the corresponding second extruded rings; wherein the second extruded rings have a dimension for inserting into the first extruded rings.
Claim 11
Dependent Claim
36 words
The stacked assembly as claimed in claim 8 , wherein each semiconductor chip further comprising a metal layer formed inside the through holes to electrically connect the first bonding pads to the corresponding second bonding pads.
Claim 12
Dependent Claim
28 words
The stacked assembly as claimed in claim 9 , wherein the metal layer, the first extruded rings and the second extruded rings are made of the same material.
Claim 13
Dependent Claim
21 words
The stacked assembly as claimed in claim 8 , wherein the second surface of the semiconductor substrate is an active surface.
Claim 14
Dependent Claim
53 words
The stacked assembly as claimed in claim 11 , wherein each semiconductor chip further comprising an insulation layer is formed on the first surface of the semiconductor substrate, wherein the first extruded ring is, further extruded from and in contact with the insulation layer, and wherein the insulation layer is a solder mask.
Claim 15
Dependent Claim
24 words
The stacked assembly as claimed in claim 8 , wherein each semiconductor chip further comprising a filling material completely filling into the through holes.
Claim 16
Dependent Claim
38 words
The stacked assembly as claimed in claim 13 , wherein the carrier has a plurality plated through holes aligned with the through holes of the semiconductor substrate, wherein the filling material further fills into the plated through holes.
Claim 17
Dependent Claim
191 words
A semiconductor chip primarily comprising: a semiconductor substrate having a first surface, a corresponding second surface, a first blind hole in the first surface and a second blind hole in the second surface, wherein there is a horizontal displacement between the first blind hole and the second blind hole; a first bonding pad disposed on the first surface, wherein the first blind hole penetrates through the first bonding pad; a second bonding pad disposed on the second surface, wherein the second blind hole penetrates through the second bonding pad; a first extruded ring extrusively disposed on the first bonding pad in a manner that the first bonding pad has a first contact surface exposed on the first surface and located between the first extruded ring and the first blind hole; and a second extruded ring extrusively disposed on the second bonding pad in a manner that the second bonding pad has a second contact surface exposed on the second surface and located outside and adjacent to the second extruded ring to encircle the second extruded ring; wherein the second extruded ring has a dimension to fit in the first extruded ring.
Claim 18
Dependent Claim
191 words
A semiconductor chip primarily comprising: a semiconductor substrate having a first surface, a corresponding second surface, a first blind hole in the first surface and a second blind hole in the second surface, wherein there is a horizontal displacement between the first blind hole and the second blind hole; a first bonding pad disposed on the first surface, wherein the first blind hole penetrates through the first bonding pad; a second bonding pad disposed on the second surface, wherein the second blind hole penetrates through the second bonding pad; a first extruded ring extrusively disposed on the first bonding pad in a manner that the first bonding pad has a first contact surface exposed on the first surface and located between the first extruded ring and the first blind hole; and a second extruded ring extrusively disposed on the second bonding pad in a manner that the second bonding pad has a second contact surface exposed on the second surface and located outside and adjacent to the second extruded ring to encircle the second extruded ring; wherein the second extruded ring has a dimension to fit in the first extruded ring.
Claim 19
Dependent Claim
26 words
The semiconductor chip as claimed in claim 15 , further comprising a filling material completely filling into the first blind hole and the second blind hole.
Claim 20
Dependent Claim
20 words
The semiconductor chip as claimed in claim 16 , wherein the filling material further fills into the second extruded ring.
Claim 21
Dependent Claim
27 words
The semiconductor chip as claimed in claim 15 , further comprising a redistribution wiring layer (RDL) electrically connecting the first blind hole to the second blind hole.
Claim 22
Dependent Claim
22 words
The semiconductor chip as claimed in claim 18 , further comprising a metal layer formed inside the first and second blind holes.
Claim 23
Dependent Claim
28 words
The semiconductor chip as claimed in claim 19 , wherein the metal layer, the first extruded rings and the second extruded rings are made of the same material.
Claim 24
Dependent Claim
47 words
The semiconductor chip as claimed in claim 15 , further comprising an insulation layer formed on the first surface of the semiconductor substrate, wherein the first extruded ring is extruded from and in contact with the insulation layer, and wherein the insulation layer is a solder mask.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2013-11-22 | 2014-05-24 | 2014-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2017-11-22 | 2018-05-24 | 2018-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2021-11-22 | 2022-05-24 | 2022-11-23 | $7700.00 | Window Closed / Lapsed |