US6566232B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating semiconductor device
Assignee: Samsung Electronics Co Ltd
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Filing: 2000-10-19
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Granted: 2003-05-20
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Expires: 2020-10-19
Abstract
Abstract After a silicon oxide film is formed on a semiconductor wafer, pattern formation alignment marks are provided in the chip formation areas and through-holes for stacking are formed in each chip formation area using an alignment mark as reference in order to improve accuracy in vertically stacking semiconductor chips. Next, after forming elements, wiring and electrode parts on the semiconductor wafer, the semiconductor wafer is cut along the chip formation area and is divided into semiconductor chips. Then, the divided semiconductor chips, as many as needed, are stacked by matching the through-holes.
Inventors
- 👤 Akitoshi Hara
- 👤 Eiichi Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:52
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10W20/0238; H10W20/0261; H10W20/20; H10W46/00; H10W90/00; H10W46/101; H10W46/601; H10W46/603; H10W90/20; H10W90/297; H10W90/701; H10W90/721; H10W90/722
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
71 words
A method of fabricating a semiconductor apparatus, comprising the steps of: forming first through-holes penetrating a semiconductor wafer; forming circuits in said semiconductor wafer after forming said first through-holes; dividing said semiconductor wafer into first semiconductor chips each having said first through-holes; and disposing said first semiconductor chip on a second semiconductor chip which has second through-holes penetrating said second semiconductor chip by matching said first through-holes and said second through-holes.
Claim 2
Independent Claim
71 words
A method of fabricating a semiconductor apparatus, comprising the steps of: forming first through-holes penetrating a semiconductor wafer; forming circuits in said semiconductor wafer after forming said first through-holes; dividing said semiconductor wafer into first semiconductor chips each having said first through-holes; and disposing said first semiconductor chip on a second semiconductor chip which has second through-holes penetrating said second semiconductor chip by matching said first through-holes and said second through-holes.
Claim 3
Independent Claim
92 words
A method of fabricating a semiconductor apparatus, comprising the steps of: forming first through-holes penetrating a first semiconductor wafer; forming circuits in said semiconductor wafer; disposing said first semiconductor wafer, said first semiconductor wafer including first semiconductor chips on a second semiconductor wafer which has second through-holes penetrating said second semiconductor wafer by matching said first through-holes on said second through-holes, said second semiconductor wafer including second semiconductor chips; and dividing said first semiconductor wafer and said second semiconductor wafer into first semiconductor chips which are disposed on said second semiconductor chips.
Claim 4
Independent Claim
92 words
A method of fabricating a semiconductor apparatus, comprising the steps of: forming first through-holes penetrating a first semiconductor wafer; forming circuits in said semiconductor wafer; disposing said first semiconductor wafer, said first semiconductor wafer including first semiconductor chips on a second semiconductor wafer which has second through-holes penetrating said second semiconductor wafer by matching said first through-holes on said second through-holes, said second semiconductor wafer including second semiconductor chips; and dividing said first semiconductor wafer and said second semiconductor wafer into first semiconductor chips which are disposed on said second semiconductor chips.
Claim 5
Dependent Claim
36 words
The method of fabricating a semiconductor apparatus of claim 1 , said first semiconductor chips having electrodes thereon, and said first through-holes being formed at positions where said electrodes electrically connecting to said circuits are formed.
Claim 6
Dependent Claim
50 words
The method of fabricating a semiconductor apparatus of claim 1 , each of said first semiconductor chips having a first surface and a second surface, said through-holes being formed at positions where first electrodes disposed on said first surface and second electrodes disposed on said second surface are connected electrically.
Claim 7
Independent Claim
61 words
A method of fabricating a semiconductor apparatus, comprising the steps of: forming circuits on semiconductor wafers; forming through-holes in said semiconductor wafers; stacking a plurality of said semiconductor wafers by matching said through-holes, and mutually bonding stacked semiconductor wafers by injecting conductive adhesive agents inside the through-holes; and dividing said plurality of bonded semiconductor wafers into semiconductor chips having said circuits.
Claim 8
Independent Claim
61 words
A method of fabricating a semiconductor apparatus, comprising the steps of: forming circuits on semiconductor wafers; forming through-holes in said semiconductor wafers; stacking a plurality of said semiconductor wafers by matching said through-holes, and mutually bonding stacked semiconductor wafers by injecting conductive adhesive agents inside the through-holes; and dividing said plurality of bonded semiconductor wafers into semiconductor chips having said circuits.
Claim 9
Dependent Claim
17 words
A semiconductor apparatus fabricated by the method of fabricating a semiconductor apparatus described in claim 1 .
Claim 10
Dependent Claim
36 words
The method of fabricating a semiconductor apparatus of claim 2 , said first semiconductor wafer having electrodes thereon, and said first through-holes being formed at positions where said electrodes electrically connecting to said circuits are formed.
Claim 11
Dependent Claim
48 words
The method of fabricating a semiconductor apparatus of claim 2 , each of said first semiconductor chips having first surface and second surface, said through-holes being formed at positions where first electrodes disposed on said first surface and second electrodes disposed on said second surface are connected electrically.
Claim 12
Dependent Claim
17 words
A semiconductor apparatus fabricated by the method of fabricating a semiconductor apparatus described in claim 2 .
Claim 13
Dependent Claim
17 words
A semiconductor apparatus fabricated by the method of fabricating a semiconductor apparatus described in claim 5 .
Claim 14
Dependent Claim
56 words
The method of fabricating a semiconductor apparatus of claim 1 , further comprising the step of: providing alignment marks on said semiconductor wafer before said step of forming said first through-holes penetrating said semiconductor wafer, wherein said first through-holes are formed by using said alignment marks as reference at said step of forming said first through-holes.
Claim 15
Dependent Claim
57 words
The method of fabricating a semiconductor apparatus of claim 2 , further comprising the step of: providing alignment marks on said first semiconductor wafer before said step of forming said first through-holes penetrating said first semiconductor wafer, wherein said first through-holes are formed using said alignment marks as reference at said step of forming said first through-holes.
Claim 16
Dependent Claim
34 words
The method of fabricating a semiconductor apparatus of claim 1 , wherein the first through-holes have insulation films therein, said insulation films are formed at said step of forming circuits in said semiconductor wafer.
Claim 17
Dependent Claim
35 words
The method of fabricating a semiconductor apparatus of claim 2 , wherein the first through-holes have insulation films therein, said insulation films are formed at said step of forming circuits in the first semiconductor wafer.
Claim 18
Dependent Claim
37 words
The method of fabricating a semiconductor apparatus of claim 2 , wherein said step of forming circuits in said first semiconductor chips having circuits is after said step of forming first through-holes in said first semiconductor wafer.
Claim 19
Dependent Claim
36 words
The method of fabricating a semiconductor apparatus of claim 2 , wherein said step of forming circuits in said semiconductor chips having circuits is before said step of forming first through-holes in said first semiconductor wafer.
Claim 20
Independent Claim
70 words
A method of fabricating a semiconductor apparatus, comprising the steps of: forming first through-holes penetrating a semiconductor wafer; forming circuits in said semiconductor wafer; dividing said semiconductor wafer into first semiconductor chips, each of said first semiconductor chips having said first through-holes; and disposing said first semiconductor chips on second semiconductor chips which have second through-holes penetrating said second semiconductor chips by matching said first through-holes and said second through-holes.
Claim 21
Independent Claim
70 words
A method of fabricating a semiconductor apparatus, comprising the steps of: forming first through-holes penetrating a semiconductor wafer; forming circuits in said semiconductor wafer; dividing said semiconductor wafer into first semiconductor chips, each of said first semiconductor chips having said first through-holes; and disposing said first semiconductor chips on second semiconductor chips which have second through-holes penetrating said second semiconductor chips by matching said first through-holes and said second through-holes.
Claim 22
Dependent Claim
35 words
The method of fabricating a semiconductor apparatus of claim 17 , wherein said step of forming said circuits in the semiconductor wafer is before the step of forming said first through-holes in said semiconductor wafer.
Claim 23
Dependent Claim
35 words
The method of fabricating a semiconductor apparatus of claim 17 , wherein said step of forming said circuits in said semiconductor wafer is after said step of forming said first through-holes in said semiconductor wafer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-05-19 | 2006-11-18 | 2007-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-05-19 | 2010-11-18 | 2011-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-05-19 | 2014-11-18 | 2015-05-20 | $7700.00 | Window Closed / Lapsed |