US7745319B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
System and method for fabricating a fin field effect transistor
Assignee: Micron Technology Inc
•
Filing: 2006-08-22
•
Granted: 2010-06-29
•
Expires: 2026-08-22
Abstract
Abstract There is provided a system and method for fabricating a fin field effect transistor. More specifically, in one embodiment, there is provided a method comprising depositing a layer of nitride on a substrate, applying a photolithographic mask on the layer of nitride to define a location of a wall, etching the layer of nitride to create the wall, removing the photolithographic mask, depositing a spacer layer adjacent to the wall, etching the spacer layer to create a spacer adjacent to the wall, wherein the spacer and the wall cover a first portion of the substrate, and etching a second portion of the substrate not covered by the spacer to create a trench.
Inventors
- 👤 Sanh D. Tang
- 👤 Gordon Haller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:49
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/62; H10D30/01; H10D30/021; H10D30/024; H10D30/611; H10D30/6211; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/834; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10P50/695
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
131 words
A method comprising: depositing a layer of nitride on a substrate; disposing a photolithographic mask on the layer of nitride, to define a location of a wall; etching the layer of nitride to create the wall; removing the photolithographic mask; depositing a spacer layer adjacent to the wall; etching the spacer layer to create a spacer adjacent to the wall, wherein the spacer and the wall cover a first portion of the substrate; etching a second portion of the substrate not covered by the spacer to create a trench; filing the trench with a dielectric material; etching the layer of nitride to expose a part of the first portion of the substrate; and etching the exposed part of the first portion of the substrate to a depth to create a channel.
Claim 2
Independent Claim
131 words
A method comprising: depositing a layer of nitride on a substrate; disposing a photolithographic mask on the layer of nitride, to define a location of a wall; etching the layer of nitride to create the wall; removing the photolithographic mask; depositing a spacer layer adjacent to the wall; etching the spacer layer to create a spacer adjacent to the wall, wherein the spacer and the wall cover a first portion of the substrate; etching a second portion of the substrate not covered by the spacer to create a trench; filing the trench with a dielectric material; etching the layer of nitride to expose a part of the first portion of the substrate; and etching the exposed part of the first portion of the substrate to a depth to create a channel.
Claim 3
Dependent Claim
21 words
The method, as set forth in claim 1 , wherein depositing the spacer layer comprises depositing a layer of Tetraethyl Orthosilicate.
Claim 4
Dependent Claim
21 words
The method, as set forth in claim 1 , wherein filing the trench comprises filing the trench with a spin-on dielectric.
Claim 5
Dependent Claim
22 words
The method, as set forth in claim 1 , comprising etching the dielectric material to approximately the same depth as the substrate.
Claim 6
Dependent Claim
26 words
The method, as set forth in claim 4 , wherein etching the dielectric material to approximately the same depth as the substrate comprises creating a fin.
Claim 7
Dependent Claim
27 words
The method, as set forth in claim 5 , wherein creating the fin comprises creating a fin that is recessed below an upper surface of the substrate.
Claim 8
Dependent Claim
31 words
The method, as set forth in claim 4 , wherein etching the dielectric material to approximately the same depth as the substrate comprises creating a first fin and a second fin.
Claim 9
Dependent Claim
38 words
The method, as set forth in claim 4 , wherein etching the exposed part of the first portion of the substrate comprises creating a first wall of the first fin and a first wall of the second fin.
Claim 10
Dependent Claim
17 words
The method, as set forth in claim 4 , comprising forming a gate deposited on the substrate.
Claim 11
Dependent Claim
16 words
The method, as set forth in claim 4 , comprising forming a gate onto a fin.
Claim 12
Independent Claim
69 words
A method of fabricating a transistor comprising a fin and a gate, the method comprising: performing a first etch to create a first wall of the fin in a portion of a substrate, without using a photolithographic mask in the portion; performing a second etch to create a second wall of the fin; and depositing a gate on the fin, wherein the gate is deposited after the second etch.
Claim 13
Independent Claim
69 words
A method of fabricating a transistor comprising a fin and a gate, the method comprising: performing a first etch to create a first wall of the fin in a portion of a substrate, without using a photolithographic mask in the portion; performing a second etch to create a second wall of the fin; and depositing a gate on the fin, wherein the gate is deposited after the second etch.
Claim 14
Dependent Claim
32 words
The method, as set forth in claim 11 , wherein performing the first etch comprises creating the first wall of the fin that is recessed below the upper surface of a substrate.
Claim 15
Dependent Claim
20 words
The method, as set forth in claim 11 , wherein the method comprises fabricating a transistor comprising a single gate.
Claim 16
Dependent Claim
21 words
The method, as set forth in claim 11 , wherein performing the first etch creates a first wall of another fin.
Claim 17
Dependent Claim
37 words
The method of claim 11 , wherein performing a first etch to create a first wall of the fin comprises etching an exposed part of a substrate to a depth to create a channel in the substrate.
References Cited (Backward Citations)
US5021353A
Cited
US5177027A
Cited
US5804506A
Cited
US6060783A
Cited
US6469389B2
Cited
US6110798A
Cited
US20020179970A1
Cited
US6376380B1
Cited
US6346455B1
Cited
US6492212B1
Cited
US6903425B2
Cited
US7071049B2
Cited
US6936507B2
Cited
US7071043B2
Cited
US20040191980A1
Cited
US20040251487A1
Cited
US20050035391A1
Cited
US20050110085A1
Cited
US20050179030A1
Cited
US20050205945A1
Cited
US20050266638A1
Cited
US20050275040A1
Cited
US20060063350A1
Cited
US20060046424A1
Cited
US20060043471A1
Cited
US20060046391A1
Cited
US20060043449A1
Cited
US20060043450A1
Cited
US20060125044A1
Cited
US20060151880A1
Cited
US7265059B2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2013-06-28 | 2013-12-28 | 2014-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2017-06-28 | 2017-12-28 | 2018-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2021-06-28 | 2021-12-28 | 2022-06-29 | $7700.00 | Window Closed / Lapsed |