Patent US7482255B2 successfully refreshed from Google Patents.
US7482255B2
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US
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Method of ion implantation to reduce transient enhanced diffusion
Assignee: Applied Materials Inc
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Filing: 2005-12-14
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Granted: 2009-01-27
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Expires: 2025-12-14
Abstract
Abstract A method of ion implantation comprises the steps of: providing a semiconductor substrate; performing a pre-amorphisation implant in the semiconductor substrate in a direction of implant at an angle in the range of 20-60° to a normal to a surface of the semiconductor substrate, and performing an implant of a dopant in the semiconductor substrate to provide a shallow junction. In a feature of the invention, the method further comprises performing an implant of a defect trapping element in the semiconductor substrate and the pre-amorphisation implant step is performed at a first implant energy and the implant of a defect trapping element is performed at a second implant energy, the ratio of the first implant energy to the second implant energy being in the range of 10-40%.
Inventors
- 👤 Houda Graoui
- 👤 Majeed Ali Foad
- 👤 Amir Al-Bayati
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:04
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P30/21; H10P30/222; H10P30/28; H10P95/00; H10P95/90; H10P30/206; H10P30/218; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
76 words
A method of ion implantation comprising the steps of: providing a silicon substrate; performing a first pre-amorphisation implant in the semiconductor substrate at a first implant energy; performing a second pre-amorphisation implant in the semiconductor substrate at a second implant energy; and after performing the first and second pre-amorphisation implants, performing an implant of a dopant in the semiconductor substrate to provide a shallow junction, wherein the first implant is greater than the second implant energy.
Claim 2
Independent Claim
76 words
A method of ion implantation comprising the steps of: providing a silicon substrate; performing a first pre-amorphisation implant in the semiconductor substrate at a first implant energy; performing a second pre-amorphisation implant in the semiconductor substrate at a second implant energy; and after performing the first and second pre-amorphisation implants, performing an implant of a dopant in the semiconductor substrate to provide a shallow junction, wherein the first implant is greater than the second implant energy.
Claim 3
Dependent Claim
52 words
The method of ion implantation according to claim 1 , further comprising the step of: performing an implant of a defect trapping element in the semiconductor substrate at a third implant energy; and wherein the ratio of the third implant energy to the first implant energy is in the range of 10-40%.
Claim 4
Dependent Claim
12 words
The method of claim 2 , wherein the ratio is substantially 25%.
Claim 5
Dependent Claim
29 words
The method of claim 2 , wherein performing a pre-amorphisation implant step comprises implanting any one of the following semiconductor materials into the semiconductor substrate: germanium, silicon, fluorine, antimony.
Claim 6
Dependent Claim
22 words
The method of claim 2 , wherein the defect trapping element is any one of the following materials: carbon, nitrogen and fluorine.
Claim 7
Dependent Claim
43 words
The method of claim 2 , wherein performing a pre-amorphisation implant step comprises implanting germanium into the semiconductor substrate, wherein the defect trapping element is carbon and wherein the ratio of the third implant energy to the first implant energy is substantially 25%.
Claim 8
Dependent Claim
20 words
The method of claim 2 , wherein the dopant is selected from the grouping consisting of boron, arsenic and phosphorous.
Claim 9
Dependent Claim
40 words
The method of claim 2 , wherein performing a pre-amorphisation implant step comprises performing an implant such that a direction of implant is at an angle in the range of 20-60° to normal to a surface of the semiconductor substrate.
Claim 10
Dependent Claim
14 words
The method of claim 8 , wherein the angle is in the range 35-40°.
Claim 11
Dependent Claim
42 words
The method of claim 8 , wherein the step of performing a pre-amorphisation implant further comprises implanting a pre-amorphisation material at an implant energy which is dependent on the angle of implant, the implant energy being increased as the angle is increased.
Claim 12
Dependent Claim
15 words
The method of claim 10 , further comprising the step of performing an anneal process.
Claim 13
Dependent Claim
21 words
The method of claim 11 , wherein the anneal process comprises one of a rapid thermal anneal and a non-equilibrium anneal.
Claim 14
Dependent Claim
40 words
The method of claim 1 , wherein performing a pre-amorphisation implant step comprises performing an implant such that a direction of implant is at an angle in the range of 20-60° to normal to a surface of the semiconductor substrate.
Claim 15
Dependent Claim
45 words
The method of claim 13 , wherein the step of performing an implant of a dopant comprises performing an implant such that a direction of implant is at an angle in the range of 20-60° to a normal to a surface of the semiconductor substrate.
Claim 16
Dependent Claim
14 words
The method of claim 13 , wherein the angle is in the range 35-40°.
Claim 17
Dependent Claim
42 words
The method of claim 13 , wherein the step of performing a pre-amorphisation implant further comprises implanting a pre-amorphisation material at an implant energy which is dependent on the angle of implant, the implant energy being increased as the angle is increased.
Claim 18
Dependent Claim
20 words
The method of claim 13 , further comprising performing an implant of a defect trapping element in the semiconductor substrate.
Claim 19
Dependent Claim
15 words
The method of claim 13 , further comprising the step of performing an anneal process.
Claim 20
Dependent Claim
21 words
The method of claim 18 , wherein the anneal process comprises one of a rapid thermal anneal and a non-equilibrium anneal.
Claim 21
Independent Claim
77 words
A method of ion implantation comprising the steps of: providing a silicon substrate; performing a first pre-amorphisation implant in the semiconductor substrate at a first implant dose; performing a second pre-amorphisation implant in the semiconductor substrate at a second implant dose; and after performing the first and second pre-amorphisation implants, performing an implant of a dopant in the semiconductor substrate to provide a shallow junction, wherein the first implant dose is greater than the second implant dose.
Claim 22
Independent Claim
77 words
A method of ion implantation comprising the steps of: providing a silicon substrate; performing a first pre-amorphisation implant in the semiconductor substrate at a first implant dose; performing a second pre-amorphisation implant in the semiconductor substrate at a second implant dose; and after performing the first and second pre-amorphisation implants, performing an implant of a dopant in the semiconductor substrate to provide a shallow junction, wherein the first implant dose is greater than the second implant dose.
Claim 23
Dependent Claim
78 words
The method of ion implantation according to claim 20 wherein the first pre-amorphisation implant is performed at a first implant energy and the second pre-amorphisation implant is performed at a second implant energy and the method further comprises the step of: performing an implant of a defect trapping element in the semiconductor substrate at a third implant energy; and wherein the ratio of the third implant energy to the first implant energy is in the range of 10-40%.
Claim 24
Dependent Claim
43 words
The method of claim 21 , wherein performing a pre-amorphisation implant step comprises implanting germanium into the semiconductor substrate, wherein the defect trapping element is carbon and wherein the ratio of the third implant energy to the first implant energy is substantially 25%.
Claim 25
Dependent Claim
40 words
The method of claim 20 , wherein performing a pre-amorphisation implant step comprises performing an implant such that a direction of implant is at an angle in the range of 20-60 to normal to a surface of the semiconductor substrate.
Claim 26
Dependent Claim
42 words
The method of claim 23 , wherein the step of performing a pre-amorphisation implant further comprises implanting a pre-amorphisation material at an implant energy which is dependent on the angle of implant, the implant energy being increased as the angle is increased.
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