EP1460680A2
Expired / Lapsed
EP
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Complementary junction-narrowing implants for formation of ultra-shallow junctions
Assignee: Texas Instruments Inc
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Filing: 2004-03-18
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Granted: —
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Expires: 2024-03-18
Abstract
Abstract Methods are disclosed for forming ultra shallow junctions in semiconductor substrates using multiple ion implantation steps. The ion implantation steps include implantation of at least one electronically-active dopant such as boron (320) as well as the implantation of at least two species, such as fluorine (310) and antimony (300), effective at limiting junction broadening by channeling during dopant implantation and/or by thermal diffusion. Following dopant implantation, the electronically-active dopant is activated by thermal processing (330).
Inventors
- 👤 Amitabh Jain
- 👤 Stephanie W. Butler
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 23:20
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D30/601; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10P30/208; H10P30/21; H10P30/225; H10P30/28; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
78 words
A method for forming an ultra-shallow junction in a semiconductor substrate comprising doping the substrate by: implanting antimony ions in a surface area of the semiconductor substrate with a first implant energy ; implanting fluorine ions in the surface area with a second implant energy; implanting boron difluoride ions in the surface area with a third implant energy lower than the first implant energy and the second implant energy; and activating the boron dopant by rapid thermal annealing.
Claim 2
Dependent Claim
20 words
The method of claim 1, in which the antimony-implant step occurs prior to the florine-implant step and the boron-difluoride-implant step.
Claim 3
Dependent Claim
17 words
The method in claim 2 in which the florine -implant step occurs prior to the boron-difuoride-implant step.
Claim 4
Dependent Claim
17 words
The method in claim 2, in which the boron-difluoride-implant step occurs prior to the fluorine -implant step.
Claim 5
Independent Claim
113 words
The method in any preceding claim, in which the antimony ions are implanted with an implant energy in the range of 30 keV and 35 keV and the dose is in the range of 2E13 ions/cm 2 and 6E13 ions/cm 2 ; the fluorine ions are implanted with an implant energy in the range of 12 keV and 30 keV and the dose is in the range of 5E14 ions/cm 2 and 2E15 ions/cm 2 ; and the boron difluoride ions are implanted with an implant energy in the range of 5 keV and 6 k eV and the dose is in the range of 4E14 ions/cm 2 and 2E15 ions/cm 2 .
Claim 6
Independent Claim
112 words
The method in any preceding claim, in which the antimony ions are implanted with an implant energy in the range of 5 keV and 15 keV and the dose is in the range of 1E13 ions/cm 2 and 5E13 ions/cm 2 ; the fluorine ions are implanted with an implant energy in the range of 10 keV and 20 keV and the dose is in the range of 2E15 ions/cm 2 and 5E15 ions/cm 2 ; and the boron difluoride ions are implanted with an implant energy in the range of 1 keV and 5 keV and the dose is in the range of 4E14 ions/cm 2 and 2E15 ions/cm 2 .
Claim 7
Dependent Claim
64 words
An ultra-shallow junction in a semiconductor substrate having a top surface, comprising: a junction near the top surface, having a substantially flat portion substantially parallel the top surface; a region between the flat portion and the top surface, containing boron atoms, antimony atoms and fluorine atoms; and the fluorine atoms in the region being more than two times the boron atoms in the region.
Claim 8
Dependent Claim
27 words
The ultra-shallow junction in claim 7, in which the density of the boron atoms at the vicinity of the junction is about 1×10 18 atoms/cm 3 .
Claim 9
Dependent Claim
23 words
The ultra-shallow junction in claim 8, in which the substantially flat portion is about 35 nm to 50 nm from the top surface.
Claim 10
Dependent Claim
23 words
The ultra-shallow junction in claim 8, in which the substantially flat portion is about 28 nm to 38 nm from the top surface.
References Cited (Backward Citations)
No citation records indexed.
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