US7115972B2
Expired / Lapsed
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Semiconductor device and chip-stack semiconductor device
Assignee: Samsung Electronics Co Ltd
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Filing: 2003-09-26
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Granted: 2006-10-03
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Expires: 2023-09-26
Abstract
Abstract A semiconductor device has multiple power-supply through electrodes, grounding through electrodes, and signal-routing through electrodes made through a semiconductor chip. The power-supply through electrodes, the grounding through electrodes, and the signal-routing through electrodes differ mutually in cross-sectional area. Hence, a semiconductor device and a chip-stack semiconductor device are provided which are capable of preventing the electrodes' resistance from developing excessive voltage drop, heat, delay, and loss, and also from varying from one electrode to the other.
Inventors
- 👤 Yoshihisa Dotta
- 👤 Toshio Kimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:35
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10W20/0238; H10W20/0245; H10W20/20; H10W20/211; H10W20/212; H10W90/00; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W72/00; H10W72/20; H10W72/241; H10W72/244; H10W72/29; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/90; H10W72/921; H10W72/926; H10W72/941; H10W72/9415; H10W72/942; H10W74/00; H10W74/10; H10W74/111; H10W74/129; H10W74/15; H10W90/20; H10W90/288; H10W90/297; H10W90/701; H10W90/721; H10W90/722; H10W90/724; H10W90/731; H10W90/734; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
106 words
A semiconductor device, comprising: a semiconductor chip; multiple through electrodes formed in the semiconductor chip linking a front surface to a back surface thereof, wherein said multiple through electrodes comprise a first through electrode and a second through electrode, and wherein said first through electrode and said second through electrode have mutually differing cross-sectional areas in a common horizontal plane transverse to a through-hole direction; and wherein at least one type of the through electrodes is contact through electrodes electrically connected to the semiconductor chip, and wherein at least one type of the through electrodes is non-contact through electrodes not electrically connected to the semiconductor chip.
Claim 2
Dependent Claim
106 words
A semiconductor device, comprising: a semiconductor chip; multiple through electrodes formed in the semiconductor chip linking a front surface to a back surface thereof, wherein said multiple through electrodes comprise a first through electrode and a second through electrode, and wherein said first through electrode and said second through electrode have mutually differing cross-sectional areas in a common horizontal plane transverse to a through-hole direction; and wherein at least one type of the through electrodes is contact through electrodes electrically connected to the semiconductor chip, and wherein at least one type of the through electrodes is non-contact through electrodes not electrically connected to the semiconductor chip.
Claim 3
Dependent Claim
28 words
The semiconductor device as set forth in claim 1 , wherein the cross-sectional areas are increased according to a magnitude of an electric current via the through electrodes.
Claim 4
Dependent Claim
28 words
The semiconductor device as set forth in claim 1 , wherein the cross-sectional areas are increased according to a magnitude of an electric current via the through electrodes.
Claim 5
Dependent Claim
28 words
The semiconductor device as set forth in claim 1 , wherein the cross-sectional areas are increased according to a magnitude of an electric current via the through electrodes.
Claim 6
Dependent Claim
51 words
The semiconductor device as set forth in claim 1 , wherein the cross-sectional areas of those through electrodes which are connected to a ground terminal or a power supply terminal of the semiconductor chip are greater than the cross-sectional areas of those through electrodes which are connected to a signal terminal.
Claim 7
Dependent Claim
51 words
The semiconductor device as set forth in claim 1 , wherein the cross-sectional areas of those through electrodes which are connected to a ground terminal or a power supply terminal of the semiconductor chip are greater than the cross-sectional areas of those through electrodes which are connected to a signal terminal.
Claim 8
Dependent Claim
51 words
The semiconductor device as set forth in claim 1 , wherein the cross-sectional areas of those through electrodes which are connected to a ground terminal or a power supply terminal of the semiconductor chip are greater than the cross-sectional areas of those through electrodes which are connected to a signal terminal.
Claim 9
Dependent Claim
50 words
A semiconductor device, comprising: multiple through electrodes in a semiconductor chip linking a front surface to a back surface thereof, wherein the through electrodes have mutually differing cross-sectional areas, and wherein at least one type of the through electrodes is non-contact through electrodes not electrically connected to the semiconductor chip.
Claim 10
Dependent Claim
50 words
A semiconductor device, comprising: multiple through electrodes in a semiconductor chip linking a front surface to a back surface thereof, wherein the through electrodes have mutually differing cross-sectional areas, and wherein at least one type of the through electrodes is non-contact through electrodes not electrically connected to the semiconductor chip.
Claim 11
Dependent Claim
28 words
The semiconductor device as set forth in claim 8 , wherein the cross-sectional areas are increased according to a magnitude of an electric current via the through electrodes.
Claim 12
Dependent Claim
51 words
The semiconductor device as set forth in claim 8 , wherein the cross-sectional areas of those through electrodes which are connected to a ground terminal or a power supply terminal of the semiconductor chip are greater than the cross-sectional areas of those through electrodes which are connected to a signal terminal.
Claim 13
Dependent Claim
104 words
A chip-stack semiconductor device, comprising multiple stacked semiconductor chips, each of the semiconductor chips including multiple through electrodes therein linking a front surface to a back surface thereof, wherein said multiple through electrodes comprise a first through electrode and a second through electrode, and wherein: the first and second through electrodes have mutually differing cross-sectional areas in a common horizontal plane transverse to a through-hole direction; and at least one type of the through electrodes is contact through electrodes electrically connected to that semiconductor chip; and wherein the cross-sectional areas are increased according to an interconnect line length through the multiple stacked semiconductor chips.
Claim 14
Dependent Claim
104 words
A chip-stack semiconductor device, comprising multiple stacked semiconductor chips, each of the semiconductor chips including multiple through electrodes therein linking a front surface to a back surface thereof, wherein said multiple through electrodes comprise a first through electrode and a second through electrode, and wherein: the first and second through electrodes have mutually differing cross-sectional areas in a common horizontal plane transverse to a through-hole direction; and at least one type of the through electrodes is contact through electrodes electrically connected to that semiconductor chip; and wherein the cross-sectional areas are increased according to an interconnect line length through the multiple stacked semiconductor chips.
Claim 15
Dependent Claim
54 words
The chip-stack semiconductor device as set forth in claim 11 , wherein the cross-sectional areas of those through electrodes which connect n+1 or more adjacent semiconductor chips are greater than the cross-sectional areas of those through electrodes which connect n adjacent semiconductor chips, where n is an integer more than or equal to 2.
Claim 16
Dependent Claim
30 words
The chip-stack semiconductor device as set forth in claim 11 , wherein the cross-sectional areas are increased in proportion to an interconnect line length through the multiple stacked semiconductor chips.
Claim 17
Dependent Claim
57 words
A chip-stack semiconductor device, comprising multiple stacked semiconductor chips, each of the semiconductor chips including multiple through electrodes therein linking a front surface to a back surface thereof, wherein: the through electrodes have mutually differing cross-sectional areas; and at least one type of the through electrodes is non-contact through electrodes not electrically connected to that semiconductor chip.
Claim 18
Dependent Claim
57 words
A chip-stack semiconductor device, comprising multiple stacked semiconductor chips, each of the semiconductor chips including multiple through electrodes therein linking a front surface to a back surface thereof, wherein: the through electrodes have mutually differing cross-sectional areas; and at least one type of the through electrodes is non-contact through electrodes not electrically connected to that semiconductor chip.
Claim 19
Dependent Claim
54 words
The chip-stack semiconductor device as set forth in claim 14 , wherein the cross-sectional areas of those through electrodes which connect n+1 or more adjacent semiconductor chips are greater than the cross-sectional areas of those through electrodes which connect n adjacent semiconductor chips, where n is an integer more than or equal to 2.
Claim 20
Dependent Claim
29 words
The chip-stack semiconductor device as set forth in claim 14 , wherein the cross-sectional areas are increased according to an interconnect line length through the multiple stacked semiconductor chips.
Claim 21
Dependent Claim
30 words
The chip-stack semiconductor device as set forth in claim 16 , wherein the cross-sectional areas are increased in proportion to an interconnect line length through the multiple stacked semiconductor chips.
Claim 22
Dependent Claim
75 words
A chip-stack semiconductor device, comprising multiple stacked semiconductor chips, each of the semiconductor chips including multiple through electrodes therein linking a front surface to a back surface thereof, wherein: the through electrodes have mutually differing cross-sectional areas; at least one type of the through electrodes is contact through electrodes electrically connected to that semiconductor chip; and at least one type of the through electrodes is non-contact through electrodes not electrically connected to that semiconductor chip.
Claim 23
Dependent Claim
75 words
A chip-stack semiconductor device, comprising multiple stacked semiconductor chips, each of the semiconductor chips including multiple through electrodes therein linking a front surface to a back surface thereof, wherein: the through electrodes have mutually differing cross-sectional areas; at least one type of the through electrodes is contact through electrodes electrically connected to that semiconductor chip; and at least one type of the through electrodes is non-contact through electrodes not electrically connected to that semiconductor chip.
Claim 24
Dependent Claim
54 words
The chip-stack semiconductor device as set forth in claim 18 , wherein the cross-sectional areas of those through electrodes which connect n+1 or more adjacent semiconductor chips are greater than the cross-sectional areas of those through electrodes which connect n adjacent semiconductor chips, where n is an integer more than or equal to 2.
Claim 25
Dependent Claim
29 words
The chip-stack semiconductor device as set forth in claim 18 , wherein the cross-sectional areas are increased according to an interconnect line length through the multiple stacked semiconductor chips.
Claim 26
Dependent Claim
30 words
The chip-stack semiconductor device as set forth in claim 20 , wherein the cross-sectional areas are increased in proportion to an interconnect line length through the multiple stacked semiconductor chips.
Claim 27
Dependent Claim
56 words
A chip-stack semiconductor device, comprising: multiple stacked semiconductor chips, each of the semiconductor chips including multiple through electrodes therein linking a front surface to a back surface thereof, wherein the through electrodes have mutually differing cross-sectional areas, and wherein the cross-sectional areas are increased according to an interconnect line length through the multiple stacked semiconductor chips.
Claim 28
Dependent Claim
56 words
A chip-stack semiconductor device, comprising: multiple stacked semiconductor chips, each of the semiconductor chips including multiple through electrodes therein linking a front surface to a back surface thereof, wherein the through electrodes have mutually differing cross-sectional areas, and wherein the cross-sectional areas are increased according to an interconnect line length through the multiple stacked semiconductor chips.
Claim 29
Dependent Claim
30 words
The chip-stack semiconductor device as set forth in claim 22 , wherein the cross-sectional areas are increased in proportion to an interconnect line length through the multiple stacked semiconductor chips.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-10-02 | 2010-04-03 | 2010-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-10-02 | 2014-04-03 | 2014-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-10-02 | 2018-04-03 | 2018-10-03 | $7700.00 | Window Closed / Lapsed |