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US6534879B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor chip and semiconductor device having the chip

Assignee: Lapis Semiconductor Co Ltd
•
Filing: 2001-02-22
•
Granted: 2003-03-18
•
Expires: 2021-02-22
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Abstract

Abstract A semiconductor chip includes a main surface having a plurality of sides, a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length. The chip further includes a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having the second length, which is longer than the first length, between the one of sides and the signal electrodes.

Inventors

  • 👤 Makoto Terui

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 10:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/427; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W74/00; H10W74/10; H10W74/111; H10W74/114; H10W74/117; H10W70/63; H10W70/654; H10W70/655; H10W70/656; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/20; H10W72/29; H10W72/50; H10W72/541; H10W72/5449; H10W72/547; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/921; H10W72/926; H10W72/931; H10W72/932; H10W72/941; H10W72/944; H10W72/9445; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754

Claims Analysis

Total Claims: 44
Claim 1
Independent Claim 92 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; and a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having the second length, which is longer than the first length, between the one of sides and the signal electrodes.
Claim 2
Dependent Claim 92 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; and a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having the second length, which is longer than the first length, between the one of sides and the signal electrodes.
Claim 3
Dependent Claim 19 words
A semiconductor chip as claimed in claim 1 , wherein the power supply electrode substantially encompasses the signal electrodes.
Claim 4
Dependent Claim 55 words
A semiconductor chip as claimed in claim 1 , wherein the power supply electrode is a first power supply electrode, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip, being connected to the first power supply electrode electrically.
Claim 5
Dependent Claim 89 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; and a ground electrode formed on the main surface along the sides, the ground electrode along one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of sides and the signal electrodes.
Claim 6
Dependent Claim 89 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; and a ground electrode formed on the main surface along the sides, the ground electrode along one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of sides and the signal electrodes.
Claim 7
Dependent Claim 18 words
A semiconductor chip as claimed in claim 4 , wherein the ground electrode substantially encompasses the signal electrodes.
Claim 8
Dependent Claim 47 words
A semiconductor memory as claimed in claim 4 , wherein the ground electrode is a first ground electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically.
Claim 9
Dependent Claim 140 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of the sides and the signal electrodes, and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of the sides and the signal electrodes.
Claim 10
Dependent Claim 140 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of the sides and the signal electrodes, and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of the sides and the signal electrodes.
Claim 11
Dependent Claim 19 words
A semiconductor chip as claimed in claim 7 , wherein the power supply electrode substantially encompasses the signal electrodes.
Claim 12
Dependent Claim 18 words
A semiconductor chip as claimed in claim 7 , wherein the ground electrode substantially encompasses the signal electrodes.
Claim 13
Dependent Claim 30 words
A semiconductor chip as claimed in claim 7 , wherein the power supply electrode substantially encompasses the signal electrodes, and wherein the ground electrode substantially encompasses the power supply electrode.
Claim 14
Dependent Claim 56 words
A semiconductor chip as claimed in claim 7 , wherein the power supply electrode is a first power supply electrode, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip , being connected to the first power supply electrode electrically.
Claim 15
Dependent Claim 47 words
A semiconductor chip as claimed in claim 7 , wherein the ground electrode is a first ground electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically.
Claim 16
Dependent Claim 112 words
A semiconductor chip as claimed in claim 10 , wherein the ground electrode is a first ground electrode and the power supply electrode is a first power supply electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically; and a second power supply electrode, which is formed on the main surface at an area adjacent to the center area of the semiconductor chip between the first power supply electrode and the second ground electrode, encompassing the second ground electrode, the second power supply electrode being connected to the first power supply electrode.
Claim 17
Dependent Claim 161 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes alone one of the sides being disposed in a first area having a first length; a plurality of power supply electrodes formed on the main surface along the sides, the power supply electrodes along the one of the sides being disposed between the sides and the signal electrodes, and being disposed in a single line; and a plurality of ground electrodes formed on the main surface along the sides, the ground electrodes along the one of the sides being disposed between the one of the sides and the signal electrodes, and being disposed in the single line, the power supply electrodes and the ground electrodes along the one of the sides being disposed alternatingly in the single line in a fourth area having a fourth length, which is longer than the first length.
Claim 18
Dependent Claim 161 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes alone one of the sides being disposed in a first area having a first length; a plurality of power supply electrodes formed on the main surface along the sides, the power supply electrodes along the one of the sides being disposed between the sides and the signal electrodes, and being disposed in a single line; and a plurality of ground electrodes formed on the main surface along the sides, the ground electrodes along the one of the sides being disposed between the one of the sides and the signal electrodes, and being disposed in the single line, the power supply electrodes and the ground electrodes along the one of the sides being disposed alternatingly in the single line in a fourth area having a fourth length, which is longer than the first length.
Claim 19
Dependent Claim 23 words
A semiconductor chip as claimed in claim 14 , wherein the power supply electrodes and the ground electrodes substantially encompasses the signal electrodes.
Claim 20
Dependent Claim 54 words
A semiconductor chip as claimed in claim 14 , wherein the power supply electrodes are first power supply electrodes, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip, being connected to the first power supply electrodes electrically.
Claim 21
Dependent Claim 46 words
A semiconductor memory as claimed in claim 14 , wherein the ground electrodes are first ground electrodes, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrodes electrically.
Claim 22
Dependent Claim 110 words
A semiconductor chip as claimed in claim 14 , wherein the ground electrodes are first ground electrodes and the power supply electrodes are first power supply electrodes, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrodes electrically; and a second power supply electrode, which is formed on the main surface at an area adjacent to the center area of the semiconductor chip between the first power supply electrodes and the second ground electrode, encompassing the second ground electrode, the second power supply electrode being connected to the first power supply electrodes.
Claim 23
Dependent Claim 202 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; and a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of sides and the signal electrodes, and the power supply electrode being connected to the power supply terminal.
Claim 24
Dependent Claim 202 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; and a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of sides and the signal electrodes, and the power supply electrode being connected to the power supply terminal.
Claim 25
Dependent Claim 19 words
A semiconductor device as claimed in claim 19 , wherein the power supply electrode substantially encompasses the signal electrodes.
Claim 26
Dependent Claim 55 words
A semiconductor device as claimed in claim 19 , wherein the power supply electrode is a first power supply electrode, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip, being connected to the first power supply electrode electrically.
Claim 27
Dependent Claim 200 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of sides and the signal electrodes, and the ground electrode being connected to the ground terminal.
Claim 28
Dependent Claim 200 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of sides and the signal electrodes, and the ground electrode being connected to the ground terminal.
Claim 29
Dependent Claim 18 words
A semiconductor device as claimed in claim 22 , wherein the ground electrode substantially encompasses the signal electrodes.
Claim 30
Dependent Claim 47 words
A semiconductor device as claimed in claim 22 , wherein the ground electrode is a first ground electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically.
Claim 31
Dependent Claim 259 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including an chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having first length, and each signal electrode being connected to one of the signal terminals electrically; a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of the sides and the signal electrodes, and the power supply electrode being connected to the power supply terminal, and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of the sides and the signal electrodes, and the ground electrode being connected to the ground terminal.
Claim 32
Dependent Claim 259 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including an chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having first length, and each signal electrode being connected to one of the signal terminals electrically; a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of the sides and the signal electrodes, and the power supply electrode being connected to the power supply terminal, and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of the sides and the signal electrodes, and the ground electrode being connected to the ground terminal.
Claim 33
Dependent Claim 19 words
A semiconductor device as claimed in claim 25 , wherein the power supply electrode substantially encompasses the signal electrodes.
Claim 34
Dependent Claim 18 words
A semiconductor device as claimed in claim 25 , wherein the ground electrode substantially encompasses the signal electrodes.
Claim 35
Dependent Claim 30 words
A semiconductor device as claimed in claim 25 , wherein the power supply electrode substantially encompasses the signal electrodes, and wherein the ground electrode substantially encompasses the power supply electrode.
Claim 36
Dependent Claim 55 words
A semiconductor chip as claimed in claim 25 , wherein the power supply electrode is a first power supply electrode, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip, being connected to the first power supply electrode electrically.
Claim 37
Dependent Claim 47 words
A semiconductor device as claimed in claim 25 , wherein the ground electrode is a first ground electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically.
Claim 38
Dependent Claim 113 words
A semiconductor device as claimed in claim 28 , wherein the ground electrode is a first ground electrode and the power supply electrode is a first power supply electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically; and a second power supply electrode, which is formed on the main surface at an area adjacent to the center area of the semiconductor chip between the first power supply electrode and the second ground electrode, encompassing the second ground electrode, and the second power supply electrode being connected to the first power supply electrode.
Claim 39
Dependent Claim 285 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes alone one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; a plurality of power supply electrodes formed on the main surface along the sides, the power supply electrodes along the one of the sides being disposed between the sides and the signal electrodes, and being disposed in a single line, and each power supply electrode being connected to one of the power supply terminals; and a plurality of ground electrodes formed on the main surface along the sides, the ground electrodes along the one of the sides being disposed between the one of the sides and the signal electrodes, and being disposed in the single line, each ground electrode being connected to one of the ground terminals, and the power supply electrodes and the ground electrodes along the one of the sides being disposed alternatingly in the single line in a fourth area having a fourth length, which is longer than the first length.
Claim 40
Dependent Claim 285 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes alone one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; a plurality of power supply electrodes formed on the main surface along the sides, the power supply electrodes along the one of the sides being disposed between the sides and the signal electrodes, and being disposed in a single line, and each power supply electrode being connected to one of the power supply terminals; and a plurality of ground electrodes formed on the main surface along the sides, the ground electrodes along the one of the sides being disposed between the one of the sides and the signal electrodes, and being disposed in the single line, each ground electrode being connected to one of the ground terminals, and the power supply electrodes and the ground electrodes along the one of the sides being disposed alternatingly in the single line in a fourth area having a fourth length, which is longer than the first length.
Claim 41
Dependent Claim 23 words
A semiconductor device as claimed in claim 32 , wherein the power supply electrodes and the ground electrodes substantially encompasses the signal electrodes.
Claim 42
Dependent Claim 54 words
A semiconductor device as claimed in claim 32 , wherein the power supply electrodes are first power supply electrodes, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip, being connected to the first power supply electrodes electrically.
Claim 43
Dependent Claim 46 words
A semiconductor memory as claimed in claim 32 , wherein the ground electrodes are first ground electrodes, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrodes electrically.
Claim 44
Dependent Claim 111 words
A semiconductor chip as claimed in claim 32 , wherein the ground electrodes are first ground electrodes and the power supply electrodes are first power supply electrodes, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrodes electrically; and a second power supply electrode, which is formed on the main surface at an area adjacent to the center area of the semiconductor chip between the first power supply electrodes and the second ground electrode, encompassing the second ground electrode, and the second power supply electrode being connected to the first power supply electrodes.

References Cited (Backward Citations)

JPH05152489A Cited
US5155065A Cited
US5347150A Cited
US6221690B1 Cited
US6242814B1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2006-03-17 2006-09-16 2007-03-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2010-03-17 2010-09-16 2011-03-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2014-03-17 2014-09-16 2015-03-18 $7700.00 Window Closed / Lapsed

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