Patent US6534879B2 successfully refreshed from Google Patents.
US6534879B2
Expired / Lapsed
US
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Semiconductor chip and semiconductor device having the chip
Assignee: Lapis Semiconductor Co Ltd
•
Filing: 2001-02-22
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Granted: 2003-03-18
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Expires: 2021-02-22
Abstract
Abstract A semiconductor chip includes a main surface having a plurality of sides, a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length. The chip further includes a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having the second length, which is longer than the first length, between the one of sides and the signal electrodes.
Inventors
- 👤 Makoto Terui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:02
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/427; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W74/00; H10W74/10; H10W74/111; H10W74/114; H10W74/117; H10W70/63; H10W70/654; H10W70/655; H10W70/656; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/20; H10W72/29; H10W72/50; H10W72/541; H10W72/5449; H10W72/547; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/921; H10W72/926; H10W72/931; H10W72/932; H10W72/941; H10W72/944; H10W72/9445; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
92 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; and a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having the second length, which is longer than the first length, between the one of sides and the signal electrodes.
Claim 2
Dependent Claim
92 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; and a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having the second length, which is longer than the first length, between the one of sides and the signal electrodes.
Claim 3
Dependent Claim
19 words
A semiconductor chip as claimed in claim 1 , wherein the power supply electrode substantially encompasses the signal electrodes.
Claim 4
Dependent Claim
55 words
A semiconductor chip as claimed in claim 1 , wherein the power supply electrode is a first power supply electrode, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip, being connected to the first power supply electrode electrically.
Claim 5
Dependent Claim
89 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; and a ground electrode formed on the main surface along the sides, the ground electrode along one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of sides and the signal electrodes.
Claim 6
Dependent Claim
89 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; and a ground electrode formed on the main surface along the sides, the ground electrode along one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of sides and the signal electrodes.
Claim 7
Dependent Claim
18 words
A semiconductor chip as claimed in claim 4 , wherein the ground electrode substantially encompasses the signal electrodes.
Claim 8
Dependent Claim
47 words
A semiconductor memory as claimed in claim 4 , wherein the ground electrode is a first ground electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically.
Claim 9
Dependent Claim
140 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of the sides and the signal electrodes, and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of the sides and the signal electrodes.
Claim 10
Dependent Claim
140 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length; a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of the sides and the signal electrodes, and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of the sides and the signal electrodes.
Claim 11
Dependent Claim
19 words
A semiconductor chip as claimed in claim 7 , wherein the power supply electrode substantially encompasses the signal electrodes.
Claim 12
Dependent Claim
18 words
A semiconductor chip as claimed in claim 7 , wherein the ground electrode substantially encompasses the signal electrodes.
Claim 13
Dependent Claim
30 words
A semiconductor chip as claimed in claim 7 , wherein the power supply electrode substantially encompasses the signal electrodes, and wherein the ground electrode substantially encompasses the power supply electrode.
Claim 14
Dependent Claim
56 words
A semiconductor chip as claimed in claim 7 , wherein the power supply electrode is a first power supply electrode, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip , being connected to the first power supply electrode electrically.
Claim 15
Dependent Claim
47 words
A semiconductor chip as claimed in claim 7 , wherein the ground electrode is a first ground electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically.
Claim 16
Dependent Claim
112 words
A semiconductor chip as claimed in claim 10 , wherein the ground electrode is a first ground electrode and the power supply electrode is a first power supply electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically; and a second power supply electrode, which is formed on the main surface at an area adjacent to the center area of the semiconductor chip between the first power supply electrode and the second ground electrode, encompassing the second ground electrode, the second power supply electrode being connected to the first power supply electrode.
Claim 17
Dependent Claim
161 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes alone one of the sides being disposed in a first area having a first length; a plurality of power supply electrodes formed on the main surface along the sides, the power supply electrodes along the one of the sides being disposed between the sides and the signal electrodes, and being disposed in a single line; and a plurality of ground electrodes formed on the main surface along the sides, the ground electrodes along the one of the sides being disposed between the one of the sides and the signal electrodes, and being disposed in the single line, the power supply electrodes and the ground electrodes along the one of the sides being disposed alternatingly in the single line in a fourth area having a fourth length, which is longer than the first length.
Claim 18
Dependent Claim
161 words
A semiconductor chip, comprising: a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes alone one of the sides being disposed in a first area having a first length; a plurality of power supply electrodes formed on the main surface along the sides, the power supply electrodes along the one of the sides being disposed between the sides and the signal electrodes, and being disposed in a single line; and a plurality of ground electrodes formed on the main surface along the sides, the ground electrodes along the one of the sides being disposed between the one of the sides and the signal electrodes, and being disposed in the single line, the power supply electrodes and the ground electrodes along the one of the sides being disposed alternatingly in the single line in a fourth area having a fourth length, which is longer than the first length.
Claim 19
Dependent Claim
23 words
A semiconductor chip as claimed in claim 14 , wherein the power supply electrodes and the ground electrodes substantially encompasses the signal electrodes.
Claim 20
Dependent Claim
54 words
A semiconductor chip as claimed in claim 14 , wherein the power supply electrodes are first power supply electrodes, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip, being connected to the first power supply electrodes electrically.
Claim 21
Dependent Claim
46 words
A semiconductor memory as claimed in claim 14 , wherein the ground electrodes are first ground electrodes, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrodes electrically.
Claim 22
Dependent Claim
110 words
A semiconductor chip as claimed in claim 14 , wherein the ground electrodes are first ground electrodes and the power supply electrodes are first power supply electrodes, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrodes electrically; and a second power supply electrode, which is formed on the main surface at an area adjacent to the center area of the semiconductor chip between the first power supply electrodes and the second ground electrode, encompassing the second ground electrode, the second power supply electrode being connected to the first power supply electrodes.
Claim 23
Dependent Claim
202 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; and a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of sides and the signal electrodes, and the power supply electrode being connected to the power supply terminal.
Claim 24
Dependent Claim
202 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; and a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of sides and the signal electrodes, and the power supply electrode being connected to the power supply terminal.
Claim 25
Dependent Claim
19 words
A semiconductor device as claimed in claim 19 , wherein the power supply electrode substantially encompasses the signal electrodes.
Claim 26
Dependent Claim
55 words
A semiconductor device as claimed in claim 19 , wherein the power supply electrode is a first power supply electrode, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip, being connected to the first power supply electrode electrically.
Claim 27
Dependent Claim
200 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of sides and the signal electrodes, and the ground electrode being connected to the ground terminal.
Claim 28
Dependent Claim
200 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of sides and the signal electrodes, and the ground electrode being connected to the ground terminal.
Claim 29
Dependent Claim
18 words
A semiconductor device as claimed in claim 22 , wherein the ground electrode substantially encompasses the signal electrodes.
Claim 30
Dependent Claim
47 words
A semiconductor device as claimed in claim 22 , wherein the ground electrode is a first ground electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically.
Claim 31
Dependent Claim
259 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including an chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having first length, and each signal electrode being connected to one of the signal terminals electrically; a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of the sides and the signal electrodes, and the power supply electrode being connected to the power supply terminal, and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of the sides and the signal electrodes, and the ground electrode being connected to the ground terminal.
Claim 32
Dependent Claim
259 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including an chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes along one of the sides being disposed in a first area having first length, and each signal electrode being connected to one of the signal terminals electrically; a power supply electrode formed on the main surface along the sides, the power supply electrode along the one of the sides being disposed in a second area having a second length, which is longer than the first length, between the one of the sides and the signal electrodes, and the power supply electrode being connected to the power supply terminal, and a ground electrode formed on the main surface along the sides, the ground electrode along the one of the sides being disposed in a third area having a third length, which is longer than the first length, between the one of the sides and the signal electrodes, and the ground electrode being connected to the ground terminal.
Claim 33
Dependent Claim
19 words
A semiconductor device as claimed in claim 25 , wherein the power supply electrode substantially encompasses the signal electrodes.
Claim 34
Dependent Claim
18 words
A semiconductor device as claimed in claim 25 , wherein the ground electrode substantially encompasses the signal electrodes.
Claim 35
Dependent Claim
30 words
A semiconductor device as claimed in claim 25 , wherein the power supply electrode substantially encompasses the signal electrodes, and wherein the ground electrode substantially encompasses the power supply electrode.
Claim 36
Dependent Claim
55 words
A semiconductor chip as claimed in claim 25 , wherein the power supply electrode is a first power supply electrode, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip, being connected to the first power supply electrode electrically.
Claim 37
Dependent Claim
47 words
A semiconductor device as claimed in claim 25 , wherein the ground electrode is a first ground electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically.
Claim 38
Dependent Claim
113 words
A semiconductor device as claimed in claim 28 , wherein the ground electrode is a first ground electrode and the power supply electrode is a first power supply electrode, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrode electrically; and a second power supply electrode, which is formed on the main surface at an area adjacent to the center area of the semiconductor chip between the first power supply electrode and the second ground electrode, encompassing the second ground electrode, and the second power supply electrode being connected to the first power supply electrode.
Claim 39
Dependent Claim
285 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes alone one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; a plurality of power supply electrodes formed on the main surface along the sides, the power supply electrodes along the one of the sides being disposed between the sides and the signal electrodes, and being disposed in a single line, and each power supply electrode being connected to one of the power supply terminals; and a plurality of ground electrodes formed on the main surface along the sides, the ground electrodes along the one of the sides being disposed between the one of the sides and the signal electrodes, and being disposed in the single line, each ground electrode being connected to one of the ground terminals, and the power supply electrodes and the ground electrodes along the one of the sides being disposed alternatingly in the single line in a fourth area having a fourth length, which is longer than the first length.
Claim 40
Dependent Claim
285 words
A semiconductor device having a substrate and a semiconductor chip, comprising: the substrate having opposite first and second surfaces, the second surface including a chip-mounting area where semiconductor chip is mounted; a plurality of signal terminals formed on the second surface at the outside of the chip-mounting area; a power supply terminal formed on the second surface between the chip mounting area and the signal terminals; and a ground terminal formed on the second surface between the chip mounting area and the signal terminals; and the semiconductor chip having a main surface having a plurality of sides; a plurality of signal electrodes formed on the main surface along the sides, the signal electrodes alone one of the sides being disposed in a first area having a first length, and each signal electrode being connected to one of the signal terminals electrically; a plurality of power supply electrodes formed on the main surface along the sides, the power supply electrodes along the one of the sides being disposed between the sides and the signal electrodes, and being disposed in a single line, and each power supply electrode being connected to one of the power supply terminals; and a plurality of ground electrodes formed on the main surface along the sides, the ground electrodes along the one of the sides being disposed between the one of the sides and the signal electrodes, and being disposed in the single line, each ground electrode being connected to one of the ground terminals, and the power supply electrodes and the ground electrodes along the one of the sides being disposed alternatingly in the single line in a fourth area having a fourth length, which is longer than the first length.
Claim 41
Dependent Claim
23 words
A semiconductor device as claimed in claim 32 , wherein the power supply electrodes and the ground electrodes substantially encompasses the signal electrodes.
Claim 42
Dependent Claim
54 words
A semiconductor device as claimed in claim 32 , wherein the power supply electrodes are first power supply electrodes, further comprising a second power supply electrode, which is formed on the main surface at an area adjacent to a center area of the semiconductor chip, being connected to the first power supply electrodes electrically.
Claim 43
Dependent Claim
46 words
A semiconductor memory as claimed in claim 32 , wherein the ground electrodes are first ground electrodes, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrodes electrically.
Claim 44
Dependent Claim
111 words
A semiconductor chip as claimed in claim 32 , wherein the ground electrodes are first ground electrodes and the power supply electrodes are first power supply electrodes, further comprising a second ground electrode, which is formed on the main surface at a center area of the semiconductor chip, being connected to the first ground electrodes electrically; and a second power supply electrode, which is formed on the main surface at an area adjacent to the center area of the semiconductor chip between the first power supply electrodes and the second ground electrode, encompassing the second ground electrode, and the second power supply electrode being connected to the first power supply electrodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-03-17 | 2006-09-16 | 2007-03-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-03-17 | 2010-09-16 | 2011-03-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-03-17 | 2014-09-16 | 2015-03-18 | $7700.00 | Window Closed / Lapsed |