US6960831B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a composite layer in addition to a barrier layer between copper wiring and aluminum bond pad
Assignee: International Business Machines Corp
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Filing: 2003-09-25
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Granted: 2005-11-01
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Expires: 2023-09-25
Abstract
Abstract A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.
Inventors
- 👤 Lloyd G. Burrell
- 👤 Kwong H. Wong
- 👤 Adreanne A. Kelly
- 👤 Samuel R. McKnight
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:52
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/5525; H10W72/59; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
95 words
A semiconductor device comprising: a semiconductor base; at least one copper wiring level on the semiconductor base; a barrier layer having a first thickness on, and in direct contact with, the copper wiring level; an aluminum bond pad on the barrier layer; and a composite layer having a second thickness in addition to the barrier layer wherein the composite layer is within the aluminum pad and spaced from the barrier layer, wherein the composite layer comprises a refractory metal and a refractory metal nitride and wherein the second thickness is greater than the first thickness.
Claim 2
Dependent Claim
95 words
A semiconductor device comprising: a semiconductor base; at least one copper wiring level on the semiconductor base; a barrier layer having a first thickness on, and in direct contact with, the copper wiring level; an aluminum bond pad on the barrier layer; and a composite layer having a second thickness in addition to the barrier layer wherein the composite layer is within the aluminum pad and spaced from the barrier layer, wherein the composite layer comprises a refractory metal and a refractory metal nitride and wherein the second thickness is greater than the first thickness.
Claim 3
Dependent Claim
40 words
The semiconductor device of claim 1 wherein the composite layer comprises alternating layers of the refractory metal and the refractory metal nitride and there are at least two layers of each of the refractory metal and the refractory metal nitride.
Claim 4
Dependent Claim
25 words
The semiconductor device of claim 1 wherein the barrier layer is selected from the group consisting of tantalum nitride, tantalum nitride/tantalum and tantalum nitride/titanium/titanium nitride.
Claim 5
Dependent Claim
18 words
The semiconductor device of claim 3 wherein the thickness of the barrier layer is 500 to 1000 angstroms.
Claim 6
Dependent Claim
48 words
The semiconductor device of claim 1 wherein the refractory metal of the composite layer is selected from the group consisting of tantalum, titanium and tungsten and the refractory metal nitride of the composite layer is selected from the group consisting of tantalum nitride, titanium nitride and tungsten nitride.
Claim 7
Dependent Claim
19 words
The semiconductor device of claim 1 wherein the thickness of the aluminum bond pad is 0.5 to 2.0 microns.
Claim 8
Dependent Claim
24 words
The semiconductor device of claim 1 wherein the refractory metal of the composite layer is tantalum and the refractory metal nitride is tantalum nitride.
Claim 9
Dependent Claim
24 words
The semiconductor device of claim 1 wherein the refractory metal of the composite layer is titanium and the refractory metal nitride is titanium nitride.
Claim 10
Dependent Claim
24 words
The semiconductor device of claim 1 wherein the refractory metal of the composite layer is tungsten and the refractory metal nitride is tungsten nitride.
Claim 11
Dependent Claim
14 words
The semiconductor device of claim 1 wherein the composite layer is 1000 angstroms thick.
Claim 12
Dependent Claim
104 words
A semiconductor device comprising: a semiconductor base; at least one copper wiring level on the semiconductor base; a barrier layer having a first thickness on, and in direct contact with, the copper wiring level; an aluminum bond pad on the barrier layer; and a composite layer having a second thickness in addition to the barrier layer wherein the aluminum bond pad comprises first and second layers of aluminum and the composite layer is interposed between the first and second layers, wherein the composite layer comprises a refractory metal and a refractory metal nitride and wherein the second thickness is greater than the first thickness.
Claim 13
Dependent Claim
104 words
A semiconductor device comprising: a semiconductor base; at least one copper wiring level on the semiconductor base; a barrier layer having a first thickness on, and in direct contact with, the copper wiring level; an aluminum bond pad on the barrier layer; and a composite layer having a second thickness in addition to the barrier layer wherein the aluminum bond pad comprises first and second layers of aluminum and the composite layer is interposed between the first and second layers, wherein the composite layer comprises a refractory metal and a refractory metal nitride and wherein the second thickness is greater than the first thickness.
Claim 14
Dependent Claim
27 words
The semiconductor device of claim 11 wherein one of the first and second layers of the aluminum bond pad is in direct contact with the barrier layer.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2008-10-31 | 2009-05-02 | 2009-11-01 | $2000.00 | Window Closed / Lapsed |
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