US6239494B1
Expired / Lapsed
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Wire bonding CU interconnects
Assignee: GlobalFoundries Inc
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Filing: 1999-04-21
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Granted: 2001-05-29
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Expires: 2019-04-21
Abstract
Abstract Wire bonding to a Cu interconnect via and Al pad with reduced Al and Cu inter-diffusion is achieved by interposing a barrier layer between the Cu interconnect and Al pad. Embodiments include forming a barrier layer of Ti, Ta, W, alloy thereof or nitride thereof, between the Cu interconnect and the Al pad.
Inventors
- 👤 Paul R. Besser
- 👤 Robin W. Cheung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10W20/425; H10W72/00; H10W72/071; H10W72/075; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
43 words
A semiconductor device comprising: a copper (Cu) or Cu alloy interconnect formed in an inter-layer dielectric; a diffusion barrier layer on a surface of the Cu or Cu alloy interconnect; and an aluminum (Al) or Al alloy pad on the diffusion barrier layer.
Claim 2
Dependent Claim
43 words
A semiconductor device comprising: a copper (Cu) or Cu alloy interconnect formed in an inter-layer dielectric; a diffusion barrier layer on a surface of the Cu or Cu alloy interconnect; and an aluminum (Al) or Al alloy pad on the diffusion barrier layer.
Claim 3
Dependent Claim
22 words
The semiconductor device according to claim 1 , further comprising at least one wire bonded to the Al or Al alloy pad.
Claim 4
Dependent Claim
24 words
The semiconductor device according to claim 2 , wherein at least one wire comprises gold, an alloy of gold, Al and/or an Al alloy.
Claim 5
Dependent Claim
24 words
The semiconductor device according to claim 2 , wherein the diffusion barrier layer comprises titanium, tantalum, tungsten, an alloy thereof or a nitride thereof.
Claim 6
Dependent Claim
24 words
The semiconductor device according to claim 4 , wherein the diffusion barrier layer has a thickness of about 200 Å to about 5,000 Å.
Claim 7
Dependent Claim
22 words
The semiconductor device according to claim 4 , wherein the diffusion barrier layer comprises tantalum, tungsten, an alloy or a nitride thereof.
Claim 8
Dependent Claim
26 words
The semiconductor device according to claim 2 , further comprising a dielectric layer covering a portion an upper surface of the Al or Al alloy pad.
Claim 9
Dependent Claim
39 words
The semiconductor according to claim 2 , comprising a plurality of stacked metalization layers with an inter-layer dielectric between each metallization layer formed over a substrate, wherein the Cu or Cu alloy interconnect is in the uppermost metallization layer.
Claim 10
Independent Claim
51 words
A method of manufacturing a semiconductor device, the method comprising: forming a copper (Cu) or Cu alloy interconnect in an inter-layer dielectric; forming a diffusion barrier layer on a surface of the Cu or Cu alloy interconnect and forming an aluminum (Al) or Al alloy pad on the diffusion barrier layer.
Claim 11
Independent Claim
51 words
A method of manufacturing a semiconductor device, the method comprising: forming a copper (Cu) or Cu alloy interconnect in an inter-layer dielectric; forming a diffusion barrier layer on a surface of the Cu or Cu alloy interconnect and forming an aluminum (Al) or Al alloy pad on the diffusion barrier layer.
Claim 12
Dependent Claim
21 words
The method according to claim 9 , further comprising bonding at least one wire to the Al or Al alloy pad.
Claim 13
Dependent Claim
23 words
The method according to claim 10 , wherein the at least one wire comprises a gold, gold alloy, Al and/or Al alloy wire.
Claim 14
Dependent Claim
26 words
The method according to claim 9 , comprising forming a layer of titanium, tantalum, tungsten, an alloy thereof or nitride thereof as the diffusion barrier layer.
Claim 15
Dependent Claim
24 words
The method according to claim 10 , comprising forming the diffusion barrier layer at a thickness of about 200 Å to about 5,000 Å.
Claim 16
Dependent Claim
39 words
The method according to claim 10 , comprising forming a plurality of stacked metallization layers with an inter-layer dielectric between each metallization layer over a substrate, wherein the Cu or Cu alloy interconnect is in the uppermost metallization layer.
Claim 17
Dependent Claim
26 words
The method according to claim 14 , further comprising forming a dielectric layer over a portion of the Al or Al alloy pad before wire bonding.
Claim 18
Dependent Claim
43 words
The method according to claim 14 , comprising: depositing an inter-layer dielectric; forming damascene openings in the inter-layer dielectric; filling the openings with Cu or a Cu alloy; and planarizing to form the uppermost metallization pattern including the Cu or Cu alloy interconnect.
Claim 19
Dependent Claim
21 words
The method according to claim 16 , further comprising depositing a diffusion barrier layer lining the openings before filling the openings.
Claim 20
Dependent Claim
30 words
The method according to claim 17 , comprising depositing a layer of titanium, tantalum, tungsten an alloy thereof or a nitride thereof, as the diffusion barrier layer lining the openings.
Claim 21
Dependent Claim
21 words
The method according to claim 11 , wherein the diffusion barrier layer comprises tantalum, tungsten, an alloy or a nitride thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-28 | 2004-11-27 | 2005-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-28 | 2008-11-27 | 2009-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-28 | 2012-11-27 | 2013-05-29 | $7700.00 | Window Closed / Lapsed |