Patent US6870210B2 successfully refreshed from Google Patents.
US6870210B2
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Dual-sided capacitor
Assignee: Micron Technology Inc
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Filing: 2002-08-22
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Granted: 2005-03-22
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Expires: 2022-08-22
Abstract
Abstract A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon (HSG) as part of a dual-sided lower capacitor electrode. Prior to the dielectric formation, the lower capacitor electrode may be optionally annealed to improve capacitance.
Inventors
- 👤 Er-Xuan Ping
- 👤 Shenlin Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:59
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/716; H10B12/312; H10B12/48; H10B12/482
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
52 words
A capacitor comprising: a dual-sided electrode comprising an oxide layer between two conductive layers, wherein one of said two conductive layers is a doped polycrystalline layer in contact with said oxide layer; a dielectric layer in contact with both sides of said dual-sided electrode; and a conductive layer over said dielectric layer.
Claim 2
Dependent Claim
52 words
A capacitor comprising: a dual-sided electrode comprising an oxide layer between two conductive layers, wherein one of said two conductive layers is a doped polycrystalline layer in contact with said oxide layer; a dielectric layer in contact with both sides of said dual-sided electrode; and a conductive layer over said dielectric layer.
Claim 3
Dependent Claim
39 words
The capacitor of claim 1 , wherein the other one of said two conductive layers is a layer of hemispherical grained polysilicon, said oxide layer being located between said doped polycrystalline layer and said layer of hemispherical grained polysilicon.
Claim 4
Dependent Claim
15 words
The capacitor of claim 1 , wherein said oxide layer is a native oxide layer.
Claim 5
Dependent Claim
22 words
The capacitor of claim 3 , wherein said native oxide layer has a thickness of about 5 Angstroms to about 50 Angstroms.
Claim 6
Dependent Claim
34 words
The capacitor of claim 1 , wherein said doped polycrystalline layer is formed of a material selected from the group consisting of hemispherical grained polysilicon, silicon, germanium, or any alloy of silicon and germanium.
Claim 7
Dependent Claim
15 words
The capacitor of claim 5 , wherein said doped polycrystalline layer is formed of polysilicon.
Claim 8
Dependent Claim
17 words
The capacitor of claim 1 , wherein said dual-sided electrode is a lower electrode of said capacitor.
Claim 9
Dependent Claim
17 words
The capacitor of claim 1 , wherein said dual-sided electrode is an PH 3 annealed dual-sided electrode.
Claim 10
Dependent Claim
15 words
The capacitor of claim 1 , wherein said oxide layer is an ALD oxide layer.
Claim 11
Dependent Claim
16 words
The capacitor of claim 1 , wherein said oxide layer is a thermally grown oxide layer.
Claim 12
Dependent Claim
47 words
A dual-sided capacitor electrode comprising: an annealed doped polycrystalline layer having HSG grains of a first thickness; a layer of hemispherical grained polysilicon having HSG grains of a second thickness; and an oxide layer between said annealed doped polycrystalline layer and said layer of hemispherical grained polysilicon.
Claim 13
Dependent Claim
47 words
A dual-sided capacitor electrode comprising: an annealed doped polycrystalline layer having HSG grains of a first thickness; a layer of hemispherical grained polysilicon having HSG grains of a second thickness; and an oxide layer between said annealed doped polycrystalline layer and said layer of hemispherical grained polysilicon.
Claim 14
Dependent Claim
23 words
The dual-sided capacitor electrode of claim 11 , wherein said oxide layer has a thickness of about 5 Angstroms to about 50 Angstroms.
Claim 15
Dependent Claim
18 words
The dual-sided capacitor electrode of claim 11 , wherein said second thickness is greater than said first thickness.
Claim 16
Dependent Claim
21 words
The dual-sided capacitor electrode of claim 11 , wherein said second thickness is of about 100 Angstroms to about 500 Angstroms.
Claim 17
Dependent Claim
21 words
The dual-sided capacitor electrode of claim 11 , wherein said first thickness is of about 10 Angstroms to about 50 Arigstroms.
Claim 18
Dependent Claim
19 words
The dual-sided capacitor electrode of claim 11 , wherein said dual-sided electrode is a lower electrode of a capacitor.
Claim 19
Dependent Claim
36 words
The dual-sided capacitor electrode of claim 11 , wherein said doped polycrystalline layer is formed of a material selected from the group consisting of hemispherical grained polysilicon, silicon, germanium, or any alloy of silicon and germanium.
Claim 20
Dependent Claim
17 words
The dual-sided capacitor electrode of claim 11 , wherein said doped polycrystalline layer is formed of polysiicon.
Claim 21
Dependent Claim
47 words
A memory cell comprising: a transistor; and a capacitor including a dual-sided electrode comprising a doped polycrystalline layer, a native oxide layer and a layer of hemispherical grained polysilicon, said dual sided electrode being electrically connected to one of a source and drain region of said transistor.
Claim 22
Dependent Claim
47 words
A memory cell comprising: a transistor; and a capacitor including a dual-sided electrode comprising a doped polycrystalline layer, a native oxide layer and a layer of hemispherical grained polysilicon, said dual sided electrode being electrically connected to one of a source and drain region of said transistor.
Claim 23
Dependent Claim
23 words
The memory cell of claim 19 , wherein said native oxide layer has a thickness of about 5 Angstroms to about 50 Angstroms.
Claim 24
Dependent Claim
26 words
The memory cell of claim 19 , wherein said native oxide layer is formed between said doped polycrystalline layer and said layer of hemispherical grained polysilicon.
Claim 25
Dependent Claim
35 words
The memory cell of claim 19 , wherein said doped polycrystalline layer is formed of a material selected from the group consisting of hemispherical grained polysilicon, silicon, germanium, or any alloy of silicon and germanium.
Claim 26
Dependent Claim
15 words
The memory cell of claim 19 , wherein said dual-sided electrode is a lower electrode.
Claim 27
Dependent Claim
17 words
The memory cell of claim 19 , wherein said native oxide layer is an ALD oxide layer.
Claim 28
Dependent Claim
18 words
The memory cell of claim 19 , wherein said native oxide layer is a thermally grown oxide layer.
References Cited (Backward Citations)
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