Abstract A semiconductor device and a method for manufacturing the same are provided having a high breakdown voltage transistor and a low breakdown voltage transistor with different driving voltages in a common substrate. The semiconductor device includes: a semiconductor substrate of a first conductivity type; a first well of a second conductivity type formed in the semiconductor substrate; a second well of the first conductivity type formed within the first well; a third well of the second conductivity type formed within the first well; a low breakdown voltage transistor of the second conductivity type formed at the second well; a low breakdown voltage transistor of the first conductivity type formed at the third well; and a high breakdown voltage transistor of the first conductivity type formed at the first well. The second well and the third well have an impurity concentration higher than an impurity concentration of the first well.
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first well of a second conductivity type formed in the semiconductor substrate; a second well of the first conductivity type formed within the first well; a third well of the second conductivity type formed within the first well; a low breakdown voltage transistor of the second conductivity type formed at the second well; a low breakdown voltage transistor of the first conductivity type formed at the third well; and a high breakdown voltage transistor of the first conductivity type formed at the first well, wherein the second well and the third well have an impurity concentration higher than an impurity concentration of the first well.
Claim 2
Dependent Claim
118 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a first well of a second conductivity type formed in the semiconductor substrate; a second well of the first conductivity type formed within the first well; a third well of the second conductivity type formed within the first well; a low breakdown voltage transistor of the second conductivity type formed at the second well; a low breakdown voltage transistor of the first conductivity type formed at the third well; and a high breakdown voltage transistor of the first conductivity type formed at the first well, wherein the second well and the third well have an impurity concentration higher than an impurity concentration of the first well.
Claim 3
Dependent Claim
39 words
A semiconductor device according to claim 1 , further comprising a fourth well of the first conductivity type formed in the semiconductor substrate, and a high breakdown voltage transistor of the second conductivity type formed at the fourth well.
Claim 4
Dependent Claim
32 words
A semiconductor device according to claim 1 , wherein a ratio of the breakdown voltages of the low breakdown voltage transistor and the high breakdown voltage transistor is about 3 to 60.
Claim 5
Dependent Claim
34 words
A semiconductor device according to claim 1 , wherein a ratio of the depths of the second well and the third well with respect to the first well is about 2 to 5, respectively.
Claim 6
Dependent Claim
19 words
A semiconductor device according to claim 1 , wherein the high breakdown voltage transistor has an offset gate structure.