Adjustable offset differential amplifier

Claim 2

An adjustable offset differential amplifier comprising: a first differential circuit receiving a first differential input; a second differential circuit receiving a second differential input; a differential amplifier output having an amplitude proportional to a difference between the first differential input and the second differential input; the first differential circuit comprising; a plurality of sub first differential transistors, gates of the sub first differential transistors receiving the first differential input, each sub first differential transistor having an adjustable back gate bias, each of the plurality of sub first differential transistors providing a different offset adjustment sensitivity; control circuitry connected to the adjustable back gate bias of each of the sub first differential transistors for reducing offset errors of the differential amplifier output.

Claim 3

The adjustable offset differential amplifier of claim 1 , wherein each of the sub first differential transistors comprises physical dimension that are different than each of the other sub first differential transistors.

Claim 4

The adjustable offset differential amplifier of claim 2 , wherein the sub first differential transistors include progressively larger physical dimension sub first differential transistors.

Claim 5

The adjustable offset differential amplifier of claim 3 , wherein each progressively larger physical dimension sub first differential transistor is approximately twice the physical dimension of the previous sub first differential transistor.

Claim 6

The adjustable offset differential amplifier of claim 3 , wherein each progressively larger physical dimension sub first differential transistor is approximately ten times the physical dimension of the previous sub first differential transistor.

Claim 7

The adjustable offset differential amplifier of claim 1 , wherein the second differential circuit comprises and adjustable back gate bias.

Claim 8

The adjustable offset differential amplifier of claim 1 , the second differential circuit comprising: a plurality of sub second differential transistors, each sub second differential transistor having an adjustable back gate bias; and the control circuitry being connected to the adjustable back gate bias of each of the sub second differential transistors for reducing offset errors of the differential amplifier output.

Claim 9

The adjustable offset differential amplifier of claim 7 , wherein each of the sub second differential transistors comprises physical dimension that are different than each of the other sub second differential transistors.

Claim 10

The adjustable offset differential amplifier of claim 8 , wherein the sub second differential transistors include progressively larger physical dimension sub second differential transistors.

Claim 11

The adjustable offset differential amplifier of claim 9 , wherein each progressively larger physical dimension sub second differential transistor is approximately twice the physical dimension of the previous sub second differential transistor.

Claim 12

The adjustable offset differential amplifier of claim 9 , wherein each progressively larger physical dimension sub second differential transistor is approximately ten times the physical dimension of the previous sub second differential transistor.

Claim 13

A resistive cross-point memory cell sensor comprising: an adjustable offset differential amplifier, the adjustable offset differential amplifier comprising: a first differential circuit receiving a sensed signal that represents a signal of a sensed resistive cross-point memory cell; a second differential circuit receiving a reference input; a differential amplifier output having an amplitude proportional to a difference between the sensed signal and the reference input; the first differential circuit comprising; a plurality of sub first differential transistors, gates of the sub first differential transistors receiving the sensed signal, each sub first differential transistor having an adjustable back gate bias, each of the plurality of sub first differential transistors providing a different offset adjustment sensitivity; control circuitry connected to the adjustable back gate bias of each of the sub first differential transistors for reducing offset errors of the differential amplifier output.

Claim 14

A resistive cross-point memory cell sensor comprising: an adjustable offset differential amplifier, the adjustable offset differential amplifier comprising: a first differential circuit receiving a sensed signal that represents a signal of a sensed resistive cross-point memory cell; a second differential circuit receiving a reference input; a differential amplifier output having an amplitude proportional to a difference between the sensed signal and the reference input; the first differential circuit comprising; a plurality of sub first differential transistors, gates of the sub first differential transistors receiving the sensed signal, each sub first differential transistor having an adjustable back gate bias, each of the plurality of sub first differential transistors providing a different offset adjustment sensitivity; control circuitry connected to the adjustable back gate bias of each of the sub first differential transistors for reducing offset errors of the differential amplifier output.

Claim 15

The resistive cross-point memory cell sensor of claim 12 , wherein each of the sub first differential transistors comprises physical dimension that are different than each of the other sub first differential transistors.

Claim 16

The resistive cross-point memory cell sensor of claim 13 , wherein the sub first differential transistors include progressively larger physical dimension sub first transistors.

Claim 17

The resistive cross-point memory cell sensor of claim 14 , wherein each progressively larger physical dimension sub first differential transistor is approximately twice the physical dimension of the previous sub first differential transistor.

Claim 18

The resistive cross-point memory cell sensor of claim 14 , wherein each progressively larger physical dimension sub first differential transistor is approximately ten times the physical dimension of the previous sub first differential transistor.

Claim 19

A resistive cross-point memory apparatus comprising: a resistive cross-point memory cell; an adjustable offset differential amplifier, the adjustable offset differential amplifier comprising: a first differential circuit receiving a sensed signal that represents a signal of a sensed resistive cross-point memory cell; a second differential circuit receiving a reference input; a differential amplifier output having an amplitude proportional to a difference between the sensed signal and the reference input; the first differential circuit comprising; a plurality of sub first differential transistors, gates of the sub first differential transistors receiving the sensed signal, each sub first differential transistor having an adjustable back gate bias, each of the plurality of sub first differential transistors providing a different offset adjustment sensitivity; control circuitry connected to the adjustable back gate bias of each of the sub first differential transistors for reducing offset errors of the differential amplifier output.

Claim 20

A resistive cross-point memory apparatus comprising: a resistive cross-point memory cell; an adjustable offset differential amplifier, the adjustable offset differential amplifier comprising: a first differential circuit receiving a sensed signal that represents a signal of a sensed resistive cross-point memory cell; a second differential circuit receiving a reference input; a differential amplifier output having an amplitude proportional to a difference between the sensed signal and the reference input; the first differential circuit comprising; a plurality of sub first differential transistors, gates of the sub first differential transistors receiving the sensed signal, each sub first differential transistor having an adjustable back gate bias, each of the plurality of sub first differential transistors providing a different offset adjustment sensitivity; control circuitry connected to the adjustable back gate bias of each of the sub first differential transistors for reducing offset errors of the differential amplifier output.

Claim 21

The resistive cross-point memory cell sensor of claim 17 , wherein the resistive cross-point memory cell comprises an MRAM memory cell.

Claim 22

The resistive cross-point memory cell sensor of claim 17 , wherein each of the sub first differential transistors comprises physical dimension that are different than each of the other sub first differential transistors.

Claim 23

The resistive cross-point memory cell sensor of claim 19 , wherein the sub first differential transistors include progressively larger physical dimension sub first transistors.

Claim 24

A resistive cross-point memory system comprising: an array of cross-point memory cells; a plurality of resistive cross-point memory cell sensors that can be electrically connected to each of the cross-point memory cells; each resistive cross-point memory cell sensor comprising: an adjustable offset differential amplifier, the adjustable offset differential amplifier comprising: a first differential circuit receiving a sensed signal that represents a signal of a sensed resistive cross-point memory cell; a second differential circuit receiving a reference input; a differential amplifier output having an amplitude proportional to a difference between the sensed signal and the reference input; the first differential circuit comprising; a plurality of sub first differential transistors, gates of the sub first differential transistors receiving the sensed signal, each sub first differential transistor having an adjustable back gate bias, each of the plurality of sub first differential transistors providing a different offset adjustment sensitivity; control circuitry connected to the adjustable back gate bias of each of the sub first differential transistors for reducing offset errors of the differential amplifier output.

Claim 25

A resistive cross-point memory system comprising: an array of cross-point memory cells; a plurality of resistive cross-point memory cell sensors that can be electrically connected to each of the cross-point memory cells; each resistive cross-point memory cell sensor comprising: an adjustable offset differential amplifier, the adjustable offset differential amplifier comprising: a first differential circuit receiving a sensed signal that represents a signal of a sensed resistive cross-point memory cell; a second differential circuit receiving a reference input; a differential amplifier output having an amplitude proportional to a difference between the sensed signal and the reference input; the first differential circuit comprising; a plurality of sub first differential transistors, gates of the sub first differential transistors receiving the sensed signal, each sub first differential transistor having an adjustable back gate bias, each of the plurality of sub first differential transistors providing a different offset adjustment sensitivity; control circuitry connected to the adjustable back gate bias of each of the sub first differential transistors for reducing offset errors of the differential amplifier output.

Claim 26

The resistive cross-point memory system of claim 21 , wherein each resistive cross-point memory cell comprises an MRAM memory cell.

Claim 27

A computer system comprising: a central processing unit; an array of cross-point memory cells, the array of cross-point memory cells that the central processing unit can store and access data, the array of cross-point memory cells comprising; a plurality of resistive cross-point memory cell sensors that can be electrically connected to each of the cross-point memory cells; each resistive cross-point memory cell sensor comprising: an adjustable offset differential amplifier, the adjustable offset differential amplifier comprising: a first differential circuit receiving a sensed signal that represents a signal of a sensed resistive cross-point memory cell; a second differential circuit receiving a reference input; a differential amplifier output having an amplitude proportional to a difference between the sensed signal and the reference input; the first differential circuit comprising; a plurality of sub first differential transistors, gates of the sub first differential transistors receiving the sensed signal, each sub first differential transistor having an adjustable back gate bias, each of the plurality of sub first differential transistors providing a different offset adjustment sensitivity; control circuitry connected to the adjustable back gate bias of each of the sub first differential transistors for reducing offset errors of the differential amplifier output.

Claim 28

A computer system comprising: a central processing unit; an array of cross-point memory cells, the array of cross-point memory cells that the central processing unit can store and access data, the array of cross-point memory cells comprising; a plurality of resistive cross-point memory cell sensors that can be electrically connected to each of the cross-point memory cells; each resistive cross-point memory cell sensor comprising: an adjustable offset differential amplifier, the adjustable offset differential amplifier comprising: a first differential circuit receiving a sensed signal that represents a signal of a sensed resistive cross-point memory cell; a second differential circuit receiving a reference input; a differential amplifier output having an amplitude proportional to a difference between the sensed signal and the reference input; the first differential circuit comprising; a plurality of sub first differential transistors, gates of the sub first differential transistors receiving the sensed signal, each sub first differential transistor having an adjustable back gate bias, each of the plurality of sub first differential transistors providing a different offset adjustment sensitivity; control circuitry connected to the adjustable back gate bias of each of the sub first differential transistors for reducing offset errors of the differential amplifier output.

Claim 29

The computer system of claim 23 , wherein each resistive cross-point memory cell comprises an MRAM memory cell.