US6803641B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
MIM capacitors and methods for fabricating same
Assignee: Texas Instruments Inc
•
Filing: 2003-08-11
•
Granted: 2004-10-12
•
Expires: 2023-08-11
Abstract
Abstract Semiconductor devices and methods for making the same are described in which a single high k or ferroelectric dielectric layer is used to form decoupling capacitors and analog capacitor segments. Analog capacitors are formed by coupling analog capacitor segments in series with one another, wherein the capacitor segments may be connected in reverse polarity relationship to provide symmetrical performance characteristics for the analog capacitors.
Inventors
- 👤 Satyavolu S. Papa Rao
- 👤 Asad M. Haider
- 👤 Kelly Taylor
- 👤 Ed Burke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:17
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D84/00; H10D84/201; H10D84/204; H10D84/212
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
47 words
A semiconductor device, comprising: an analog capacitor comprising first and second analog capacitor segments coupled in series, wherein the first and second analog capacitor segments comprise first and second portions of a dielectric layer, respectively; and a decoupling capacitor comprising a third portion of the dielectric layer.
Claim 2
Dependent Claim
47 words
A semiconductor device, comprising: an analog capacitor comprising first and second analog capacitor segments coupled in series, wherein the first and second analog capacitor segments comprise first and second portions of a dielectric layer, respectively; and a decoupling capacitor comprising a third portion of the dielectric layer.
Claim 3
Dependent Claim
91 words
The device of claim 1 , wherein the first analog capacitor segment comprises a first portion of a bottom electrode layer underlying the first portion of the dielectric layer and a first portion of a top electrode layer overlying the underlying the first portion of the dielectric layer, and wherein the second analog capacitor segment comprise a second portion of the bottom electrode layer underlying the second portion of the dielectric layer and a second portion of the top electrode layer overlying the underlying the second portion of the dielectric layer.
Claim 4
Dependent Claim
23 words
The device of claim 2 , wherein the first and second portions of the top electrode layer are electrically coupled with one another.
Claim 5
Dependent Claim
23 words
The device of claim 2 , wherein the first and second portions of the bottom electrode later are electrically coupled with one another.
Claim 6
Dependent Claim
19 words
The device of claim 2 , wherein the dielectric layer comprises a high k dielectric material or ferroelectric material.
Claim 7
Dependent Claim
36 words
The device of claim 2 , wherein the dielectric layer comprises one of TaO, PZT, BST, STO, SBT, BTO, and BLT, and the top and bottom electrode layers comprise one of TiN, TIAIN, Ir, and IrO.
Claim 8
Dependent Claim
19 words
The device of claim 1 , wherein the dielectric layer comprises a high k dielectric material or ferroelectric material.
References Cited (Backward Citations)
US6207561B1
Cited
US6300682B2
Cited
US6340832B2
Cited
US6271084B1
Cited
US6387775B1
Cited
US6391707B1
Cited
US6387750B1
Cited
US6436787B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-10-12 | 2008-04-12 | 2008-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-10-12 | 2012-04-12 | 2012-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-10-12 | 2016-04-12 | 2016-10-12 | $7700.00 | Window Closed / Lapsed |